Method for labeling products with a transparent photoluminescent label, and transparent photoluminescent label

Patent metadata

Field	Value
Publication number	US-11298968-B2
Application number	US-202016988238-A
Country	US
Kind code	B2
Filing date	Aug 7, 2020
Priority date	Nov 23, 2015
Publication date	Apr 12, 2022
Grant date	Apr 12, 2022

Abstract

A method for marking a product (1) with a photoluminescent mark, said mark comprising a photoluminescent portion (10) which is transparent under normal light conditions and revealed by photoluminescence under UV illumination, said mark further comprising a non photoluminescent portion (9) which is transparent under normal light conditions as well s under UV illumination, said method comprising: deposing on said product a stack, said stack comprising alternatively layers (2,4) such as AlN, with a thickness of less than 1 micron and layers (3) of a second material, such as GaN with a thickness of less than 10 nm; raising the transparency of said non photoluminescent portion (10) with a deposition of transparent material (6) or incorporation of ions into said non photoluminescent portions.

First claim

The invention claimed is:

1. A product comprising a photoluminescent pattern, wherein said pattern comprises:
a photoluminescent portion which is transparent under normal light conditions and revealed by photoluminescence under UV illumination, said photoluminescent portion comprising a stack comprising successive pairs of layers, said pairs of layers each comprising a first layer of a first material with a thickness of less than or equal to 1 micron and a second layer of a second material with a thickness of less than or equal 10 nm, wherein the interface between the first layer and the second layer of the pairs of layers includes quantum nano-structures;
a non-photoluminescent portion which is transparent under normal light conditions as well as under UV illumination, said non-photoluminescent portion comprising an additional transparent material or ions for raising the transparency.

2. The product of claim 1 , wherein said ions include Oxygen, Nitrogen, Hydrogen, Helium, Neon, Argon, Magnesium, Lithium, Beryllium, Boron, Phosphor, Aluminum, Zinc, Arsenic, Gallium, Silicon, Cadmium and/or any element capable of degrading the photoluminescent stack and creating non-radiative recombination center defects into the stack.

3. The product of claim 1 , wherein said transparent material as a refractive index substantially equal to the refractive index of said stack.

4. The product of claim 1 , wherein said product is transparent.

5. The product of claim 1 , wherein said stack comprises fewer than or equal to 100 layers.

6. The product of claim 1 , wherein said second layers of second material comprise GaN alloys with less than 50% of Indium, Aluminum, Arsenic and/or Phosphor.

7. The product of claim 1 , wherein said second layers of second material comprise less than or equal to 10% rare-earth elements.

8. The product of claim 1 , wherein said quantum nano-structures comprise quantum dots.

9. The product of claim 1 , wherein said first layers of first material comprise less than 20% of Magnesium, Silicon, Lithium, Beryllium, Cadmium and/or Zinc as dopant elements.

10. The product of claim 1 , wherein said ions include Oxygen, Nitrogen, Hydrogen, Helium, Neon, Argon, Magnesium, Lithium, Beryllium, Boron, Phosphor, Aluminum, Zinc, Arsenic, Gallium, Silicon, or Cadmium.

11. The product of claim 1 , wherein said ions are disposed in a pattern.

12. The product of claim 11 , wherein said pattern comprises alpha-numeric text, figures, drawings, identification codes, or logos.

13. The product of claim 1 , wherein said transparent material has a refractive index substantially equal to the refractive index of said stack.

14. The product of claim 1 , Wherein the photoluminescent portion emits light in response to UV illumination and the color of light emitted by the photoluminescent portions depends on the intensity of the UV illumination.

15. The product of claim 1 , wherein said UV illumination comprises UV wavelengths of less than or equal 400 nm.

16. The product of claim 1 , wherein the transparent material covers the photoluminescent portion.

17. The product of claim 1 , wherein the non-photoluminescent portion comprises the stack and wherein the stack of the non-photoluminescent portion comprises non-radiative defects that deactivate the photoluminescent ability of the stack in the non-photoluminescent portion.

18. The product of claim 1 , wherein the photoluminescent portion emits light in response to UV illumination and the color of light emitted by the photoluminescent portions depends on the quantum nano-structure size.

19. The product of claim 1 , wherein at least one layer of second material is roughened.

20. The product of claim 1 , wherein the quantum nano-structures are quantum wires, quantum wells, or quantum dots.

Assignees

• Ecole Polytechnique Fed Lausanne Epfl

Inventors

• Hefyene Nasser
• Grandjean Nicolas

Classifications

• C09K11/0883

  Arsenides; Nitrides; Phosphides · CPC title

• C09K11/62

  containing gallium, indium or thallium · CPC title

• C09K11/64

  containing aluminium · CPC title

• G09F3/0294

  where the change is not permanent, e.g. labels only readable under a special light, temperature indicating labels and the like · CPC title

• G04B45/0015

  Light-, colour-, line- or spot-effects caused by or on stationary parts (change of appearance by exchangeable case parts G04B47/046) · CPC title