Switchless bi-directional amplifier using neutralized differential pair

Patent metadata

Field	Value
Publication number	US-11296659-B2
Application number	US-201916981741-A
Country	US
Kind code	B2
Filing date	Mar 20, 2019
Priority date	Mar 22, 2018
Publication date	Apr 5, 2022
Grant date	Apr 5, 2022

Abstract

A bi-directional amplifier (BDA) comprises a first pair of amplifier transistors and a second pair of amplifier transistors, wherein the first pair of amplifier transistors are cross-coupled with the second pair of amplifier transistors, and wherein the first pair of amplifier transistors and the second pair of amplifier transistors each comprise a differential common-emitter (CE) pair (or common-source (CS) pair) with equal transistor size or different transistor size. The BDA further comprises a plurality of blocking capacitors to decouple the collector and the base biases of the first pair of amplifier transistors and the second pair of amplifier transistors. Alternatively or additionally, the BDA further comprises two input/output baluns, through which a common voltage bias is applied to the collectors of each of the differential CE pairs (or drains of CS pairs in some implementations). The baluns enable single-ended measurement and characterization.

First claim

What is claimed:

1. A bi-directional amplifier (BDA) comprising:
a first pair of amplifier transistors; and
a second pair of amplifier transistors,
wherein the first pair of amplifier transistors are cross-coupled with the second pair of amplifier transistors, and wherein the first pair of amplifier transistors and the second pair of amplifier transistors each comprise a differential common-emitter (CE) pair or a differential common-source (CS) pair, and wherein the first pair of amplifier transistors cross-coupled with the second pair of amplifier transistors comprises the bases and collectors of the first differential CE pair or the drains and gates of the first differential CS pair cross-coupled with the collector-base (CB) junctions or the drain-gate junctions of the second pair of amplifier transistors for capacitive neutralization.

2. The BDA of claim 1 , further comprising a plurality of blocking capacitors to decouple the collector and the base biases, or the drain and gate biases, of the first pair of amplifier transistors and the second pair of amplifier transistors.

3. The BDA of claim 1 , further comprising two input/output baluns, wherein a common voltage bias is applied to the collectors of each of the differential CE pairs or to the drains of the differential CS pairs, and wherein the two input/output baluns enable single-ended measurement and characterization.

4. The BDA of claim 1 , wherein the first pair of amplifier transistors and the second pair of amplifier transistors are configured to provide a direction of operation when one differential CE or CS pair is turned on and the other differential CE pair or CS pair is turned off.

5. The BDA of claim 1 , wherein the performance of the first pair of amplifier transistors when ON is enhanced by the second pair of amplifier transistors that are turned off.

6. The BDA of claim 1 , wherein the BDA is switchless.

7. The BDA of claim 1 , wherein the BDA is a switchless differential BDA.

8. The BDA of claim 1 , wherein each differential CE pair or differential CS pair comprises transistors of equal sizes.

9. The BDA of claim 1 , wherein each differential CE pair or differential CS pair comprises transistors of different sizes.

10. A bi-directional amplifier (BDA) comprising:
a first pair of amplifier transistors; and
a second pair of amplifier transistors, wherein the first pair of amplifier transistors are cross-coupled with the second pair of amplifier transistors, and wherein the first pair of amplifier transistors and the second pair of amplifier transistors each comprise a differential common-emitter (CE) pair or a differential common-source (CS) pair; and
a neutralized differential common-emitter (CE) or common-source (CS) amplifier core.

11. The BDA of claim 10 , wherein the BDA is switchless.

12. The BDA of claim 10 , wherein the BDA is a switchless differential BDA.

13. The BDA of claim 10 , wherein each differential CE pair or differential CS pair comprises transistors of equal sizes.

14. The BDA of claim 10 , wherein each differential CE pair or differential CS pair comprises transistors of different sizes.

15. The BDA of claim 10 , wherein the performance of the first pair of amplifier transistors when ON is enhanced by the second pair of amplifier transistors that are turned off.

16. A method comprising:
supplying collector or drain voltage to two differential pairs of transistors of a bi-directional amplifier (BDA), wherein each of the two differential pairs of transistors comprises a pair of amplifier transistors, wherein supplying the collector or drain voltage comprises supplying the voltage through center taps of secondary windings of two input/output transformer baluns in electrical connection with the BDA;
turning on a first pair of the two differential pairs of transistors by applying a base or gate bias voltage to the one differential pair of transistors; and
turning off a second pair of the two differential pairs of transistors by pulling down the base or gate bias of the transistors of the second pair.

17. The method of claim 16 , wherein a first pair of amplifier transistors are cross-coupled with a second pair of amplifier transistors, and wherein the first pair of amplifier transistors and the second pair of amplifier transistors each comprise a differential common-emitter (CE) pair or a differential common-source (CS) pair.

18. The method of claim 16 , wherein the BDA is biased in forward operation mode.

19. The method of claim 16 , further comprising providing an incident RF (radio frequency) signal to two input terminals of the BDA.

20. The method of claim 19 , wherein positive RF signal power flows in to the base of a transistor of one of the two differential pairs of transistors through a decoupling capacitor, and an inverted and amplified signal exits the collector of the transistor and reaches a negative output terminal of the BDA.

Assignees

• Georgia Tech Res Inst

Inventors

• Gong Yunyi
• Cho Moon-Kyu
• Cressler John D
• Song Ickhyun

Classifications

• H03F2200/36

  the amplifier comprising means for increasing the bandwidth · CPC title

• H03F3/62

  Two-way amplifiers · CPC title

• H03F3/45085 Primary

  Long tailed pairs (H03F3/45112, H03F3/45139 take precedence) · CPC title

• H03F3/191

  Tuned amplifiers (H03F3/193, H03F3/195 take precedence) · CPC title

• H03F1/42 Primary

  Modifications of amplifiers to extend the bandwidth · CPC title