Raman spectroscopy based measurement system

Patent metadata

Field	Value
Publication number	US-11293871-B2
Application number	US-201816613448-A
Country	US
Kind code	B2
Filing date	May 15, 2018
Priority date	May 15, 2017
Publication date	Apr 5, 2022
Grant date	Apr 5, 2022

Abstract

A method and system are presented for use in measuring one or more characteristics of patterned structures. The method comprises: performing measurements on a patterned structure by illuminating the structure with exciting light to cause Raman scattering of one or more excited regions of the pattern structure, while applying a controlled change of at least temperature condition of the patterned structure, and detecting the Raman scattering, and generating corresponding measured data indicative of a temperature dependence of the detected Raman scattering; and analyzing the measured data and generating data indicative of spatial profile of one or more properties of the patterned structure.

First claim

I claim:

1. A method for use in measuring one or more characteristics of patterned structures, the method comprising:
performing measurements on a patterned structure by illuminating the structure with exciting light to cause Raman scattering of one or more excited regions of the pattern structure, while applying a controlled change of at least temperature condition of the patterned structure, and detecting the Raman scattering, and generating corresponding measured data indicative of a temperature dependence of the detected Raman scattering; and
analyzing the measured data and generating data indicative of spatial profile of one or more properties of the patterned structure; wherein the analyzing of the measured data comprises searching for one or more variations in width of one or more peaks of the detected Raman scattering.

2. The method according to claim 1 , wherein said one or more properties of the patterned structure include at least one of material and geometric properties of the structure.

3. The method according to claim 2 , wherein said applying the controlled change of the temperature condition comprises controllably heating the pattern structure under illumination to affect corresponding change in optical absorption of materials of the patterned structure within at least said one or more excited regions, thereby changing penetration of exciting illumination into the structure, the measured data being therefore indicative of a spatial profile of sources of the Raman scattering within said one or more excited regions in the structure.

4. The method according to claim 3 , wherein the regions of the structure at different penetration depths are different from one another in at least one of the following: layer stacks and patterns.

5. The method according to claim 1 , wherein said controlled change of the temperature condition is performed by heating of the patterned structure.

6. The method according to claim 5 , wherein the heating is applied via energy of exciting illumination causing the Raman scattering.

7. The method according to claim 5 , wherein the heating is applied via energy of auxiliary illumination to the structure to at least said one or more regions being excited.

8. The method according to claim 7 , wherein an angle of incidence of the auxiliary illumination differs from an angle of incidence of exciting illumination causing the Raman scattering.

9. The method according to claim 1 , comprising performing a plurality of the measurement sessions while varying one or more of the following measurement conditions: wavelengths of the illumination; angles of incidence of the illumination; and polarization states of the illumination.

10. The method according to claim 9 , wherein said applying of the controlled change of the temperature condition comprises monitoring temperature of the structure under illumination.

11. The method according to claim 10 , wherein said monitoring of the temperature comprises analyzing spectral information in the temperature profile of the detected Raman scattering.

12. The method according to claim 9 , wherein said spatial profile of the one or more properties of the patterned structure is a two-dimensional profile of said at least one property distribution across and through the structure.

13. The method according to claim 9 , wherein said analyzing of the measured data comprises applying to said measured data one or more predetermined models describing Raman scattering from the structure, where the temperature—condition and said one or more—properties of the patterned structure are included in a set of model parameters.

14. The method according to claim 1 , wherein said illumination of the patterned structure to cause Raman scattering of one or more excited regions of the pattern structure comprises optical beams of two or more selected wavelengths.

15. The method according to claim 1 , wherein said patterned structure is a multi-layer semiconductor wafer.

16. The method according to claim 1 , wherein said controlled change of the temperature condition is performed by continuously changing a temperature of the patterned structure.

17. The method according to claim 1 , wherein said controlled change of the temperature condition is performed by applying two or more different temperatures of the patterned structure.

18. The method according to claim 1 , wherein said applying of the controlled change of the temperature condition comprises monitoring temperature of the structure under illumination by determining a ratio between Stokes and anti-Stokes signal strength of a given Raman band of the Raman scattering.

19. The method according to claim 18 wherein the temperature is determined by solving the following equation:

I

anti
-
stokes

I
stokes

=

(

ω
photon

+

ω
phonon

ω
photon

-

ω
phonon

)

4

⁢

e

-

hω
phonon

kT

;

wherein T is a temperature, k is a Bolzmann coefficient, I stokes is the signal strength is of the Stokes signal, I anti-stokes is the signal strength is of the anti-Stokes signal, ω photon is a frequency of the exciting light and ω phonon is a frequency of the Raman band.

20. The method according to claim 1 , comprising determining a penetration depth of the exciting light based on refractive index and extinction coefficient.

21. A system for measuring one or more characteristics of a patterned structure, the system comprising:
a measurement system comprising: an illumination unit configured and operable to illuminate the patterned structure to cause Raman scattering of one or more excited regions of the patterned structure and to cause controllable variation of at least a temperature condition of the structure; and a detection unit comprising at least one optical detector configured and operable to collect the Raman scattering of the structure while under the controllably variable temperature conditions, and generate corresponding meas

Assignees

• Nova Ltd

Inventors

• Oren Yonatan

Classifications

• G01N2201/0231

  Thermostating · CPC title

• G01N21/17

  Systems in which incident light is modified in accordance with the properties of the material investigated (where the material investigated is optically excited causing a change in wavelength of the incident light G01N21/63) · CPC title

• G01N21/9501

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title

• G01N2201/06113

  Coherent sources; lasers · CPC title

• G03F7/70625

  Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness · CPC title