Tunable and reconfigurable atomically thin heterostructures

Patent metadata

Field	Value
Publication number	US-11293116-B2
Application number	US-201716326856-A
Country	US
Kind code	B2
Filing date	Aug 23, 2017
Priority date	Aug 23, 2016
Publication date	Apr 5, 2022
Grant date	Apr 5, 2022

Abstract

Heterocrystals of metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 are presented, in which the metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 do not largely retain their independent properties. These heterocrystals exhibit electronic and optical changes, which make them attractive for beyond-silicon electronics and optoelectronics. Particularly, these heterocrystals can be re-configured in a manner that allows bit writing and pattern drawing. Embodiments of these heterocrystals, methods of forming these heterocrystals, methods of reconfiguring the heterocrystals, information storage devices, optoelectronic circuits and photonic crystals are presented.

First claim

What is claimed is:

1. A heterocrystal consisting of a metal dichalcogenide having the formula ME 2 in contact with Bi 2 S 3 , Bi 2 Se 3 or Bi 2 Te 3 , wherein M is a Cr, Mo, or W and E is S, Se, or Te; or a heterocrystal consisting of MoS 2 in contact with Bi 2 Te 3 ; wherein the ME 2 and Bi 2 S 3 , Bi 2 Se 3 or Bi 2 Te 3 have an interface area in which they contact, and the interface has been disrupted in selected positions to thereby reverse suppression of photoluminescence in these positions, wherein positions of the heterocrystal with suppressed photoluminescence and positions with photoluminescence are part of a photonic circuit or an optoelectronic circuit, wherein the heterocrystal exhibits a photonic pattern which has been formed by reconfiguring positions of the heterocrystal.

2. The heterocrystal of claim 1 , wherein the heterocrystal is characterized by lattice matching between 4×4 unit cells of MoS 2 and 3×3 unit cells of Bi 2 Se 3 , lattice matching between 4×4 unit cells of WS 2 and 3×3 unit cells of Bi 2 Se 3 , or lattice matching between 5×5 unit cells of MoSe 2 and 4×4 unit cells of Bi 2 Se 3 .

3. The heterocrystal of claim 1 , wherein ME 2 and Bi 2 S 3 , Bi 2 Se 3 or Bi 2 Te 3 provide a rotationally-aligned epitaxial stack.

4. The heterocrystal of claim 1 , wherein positions of the heterocrystal exhibit unsuppressed photoluminescence whereas elsewhere the heterocrystal exhibits suppressed photoluminescence.

5. The heterocrystal of claim 1 , wherein positions of the heterocrystal exhibit photoluminescence whereas elsewhere photoluminescence is suppressed by at least 90% relative to the photoluminescence at the positions, wherein the positions form a pattern encoding information.

6. The heterocrystal of claim 1 , wherein positions of the heterocrystal exhibit photoluminescence whereas elsewhere photoluminescence is suppressed by at least 90% relative to the photoluminescence at the positions.

7. The heterocrystal of claim 1 , wherein positions of the heterocrystal with suppressed photoluminescence and positions with photoluminescence represent bits of information.

8. The heterocrystal of claim 1 , wherein positions of the heterocrystal have been exposed to a beam of electromagnetic waves or particles to form exposed areas of increased average height and root means square surface roughness relative to untreated areas.

9. The heterocrystal of claim 1 , wherein positions of the heterocrystal have been exposed to a beam of electromagnetic waves or particles to form exposed areas of an average height increased by 0.35 to 0.45 nm.

10. The heterocrystal of claim 1 , wherein positions of the heterocrystal have been exposed to a beam of electromagnetic waves or particles to form exposed areas of randomly-oriented grains of Bi 2 Se 3 that remain attached to a surface of ME 2 .

11. The heterocrystal of claim 1 , wherein positions of the heterocrystal have been exposed to a beam of electromagnetic waves or particles to form exposed areas with photoluminescence recovered by at least 10% relative to untreated areas.

12. The heterocrystal of claim 1 , wherein positions of the heterocrystal with suppressed photoluminescence and positions with photoluminescence are part of the optoelectronic circuit.

13. The heterocrystal of claim 1 , wherein positions of the heterocrystal have been exposed to a beam of electromagnetic waves or particles to form exposed areas with sub-micrometer spatial resolution.

14. The heterocrystal of claim 1 , wherein positions have been light-treated by exposure to light of a wavelength of 200 nm to 1100 nm focused onto a spot size below 10 μm with 100 nW/μm 2 to 1 mW/μm 2 intensity.

15. The heterocrystal of claim 1 , wherein positions have been light-treated by exposure to light of a wavelength of about 488 nm focused onto a spot size below 1 μm with about 76 μW/μm 2 intensity.

16. A heterocrystal consisting of MoS 2 in contact with Bi 2 Se 3 wherein MoS 2 and Bi 2 Se 3 have an interface area in which they contact, and the interface has been disrupted in selected positions to thereby reverse suppression of photoluminescence in these positions, wherein positions of the heterocrystal with suppressed photoluminescence and positions with photoluminescence are part of a photonic circuit or an optoelectronic circuit, wherein the heterocrystal exhibits a photonic pattern which has been formed by reconfiguring positions of the heterocrystal.

17. The heterocrystal of claim 16 , wherein the heterocrystal is characterized by lattice matching between 4×4 unit cells of MoS 2 and 3×3 unit cells of Bi 2 Se 3 .

18. The heterocrystal of claim 16 , wherein MoS 2 and Bi 2 Se 3 provide a rotationally-aligned epitaxial stack.

19. The heterocrystal of claim 16 , wherein positions of the heterocrystal exhibit unsuppressed photoluminescence whereas elsewhere the heterocrystal exhibits suppressed photoluminescence.

20. The heterocrystal of claim 16 , wherein positions of the heterocrystal exhibit photoluminescence whereas elsewhere photoluminescence is suppressed by at least 90% relative to the photoluminescence at the positions, wherein the positions form a pattern encoding information.

21. The heterocrystal of claim 16 , wherein positions of the heterocrystal exhibit photoluminescence whereas elsewhere photoluminescence is suppressed by at least 90% relative to the photoluminescence at the positions.

22. The heterocrystal of claim 16 , wherein positions of the heterocrystal with suppressed photoluminescence and positions with photoluminescence represent bits of information.

23. The heterocrystal of claim 16 , wherein positions of the heterocrystal with suppressed photoluminescence and positions with photoluminescence are part of the optoelectronic circuit.

24. The heterocrystal of claim 16 , wherein positions of the heterocrystal have been exposed to a beam of electromagnetic waves or particles to form exposed areas with sub-micrometer spatial resolution.

25. The heterocrystal of claim 16 , wherein positions have been light-treated by exposure to light of a wavelength of 200 nm to 1100 nm focused onto a spot size below 10 μm with 100 nW/μm 2 to 1 mW/μm 2 intensity.

26. The heterocrystal of claim 16 , wherein positions have been light-treated by exposure to light of a wavelength of about 488 nm focused onto a spot size below 1 μm with about 76 μW/μm 2 intensity.

Assignees

• Univ Northeastern

Inventors

• Vargas Anthony
• Liu Fangze
• Lane Christopher Adrian
• Rubin Daniel
• Kar Swastik
• Bansil Arun
• Buda Gianina
• Hennighausen Zachariah

Classifications

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/3251

  consisting of three or more layers · CPC title

• H10P14/3246

  Monolayers · CPC title

• H10P14/3236

  being chalcogenide semiconducting materials not being oxides, e.g. ternary compounds · CPC title