Light-absorbing material, method for producing the same, and solar cell including the same

Patent metadata

Field	Value
Publication number	US-11292728-B2
Application number	US-201916416253-A
Country	US
Kind code	B2
Filing date	May 19, 2019
Priority date	Feb 10, 2017
Publication date	Apr 5, 2022
Grant date	Apr 5, 2022

Abstract

A light-absorbing material includes a compound, wherein the compound has a perovskite crystal structure represented by the formula AMX3 where a Cs+ ion is located at an A-site, a Ge2+ ion is located at an M-site, and I− ions are located at X-sites, and at least a part of the compound has an orthorhombic perovskite crystal structure. An X-ray diffraction pattern of the compound measured using Cu Kα radiation may have a first peak at a diffraction angle (2θ) of 25.4° or more and 25.8° or less and a second peak at a diffraction angle (2θ) of 24.9° or more and 25.3° or less, and an intensity of the first peak may be 30% or more of an intensity of the second peak.

First claim

What is claimed is:

1. A method for producing a light-absorbing material, the method comprising:
providing a first solution containing Ge 2+ ions, I − ions, hydriodic acid, and phosphinic acid at a predetermined temperature, wherein the first solution contains germanium diiodide or germanium oxide as a source of the Ge 2+ ions; and
mixing the first solution with a second solution containing Cs + ions at the predetermined temperature to precipitate the light-absorbing material formed of a solid compound that is a mixture of:
an orthorhombic perovskite-type compound represented by the formula AMX 3 where a Cs + ion is located at an A-site, a Ge 2+ ion is located at an M-site, and I − ions are located at X-sites, and
a rhombohedral perovskite-type compound having a rhombohedral structure represented by the formula AMX 3 where a Cs + ion is located at an A-site, a Ge 2+ ion is located at an M-site, and I − ions are located at X-sites,

wherein a bandgap of the light-absorbing material is 1.45 eV to 1.48 eV, and
wherein the predetermined temperature is not less than 50 degrees Celsius and not more than 100 degrees Celsius when the first solution contains the germanium diiodide as the source of the Ge 2+ ions and the predetermined temperature is not less than 20 degrees Celsius and not more than 50 degrees Celsius when the first solution contains the germanium oxide as the source of the Ge 2+ ions.

2. The method according to claim 1 , wherein the first solution is an organic solvent.

3. The method according to claim 1 , wherein
the first solution contains the germanium diiodide as the source of the Ge 2+ ions.

4. The method according to claim 1 , wherein
the first solution contains the germanium oxide as the source of the Ge 2+ ions.

5. The method according to claim 1 , wherein the second solution is an organic solvent.

6. The method according to claim 5 , wherein the second solution contains cesium iodide.

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Matsushita Akio
• Okumura Hiroko

Classifications

• H10K85/50

  Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title

• H10K30/50

  Photovoltaic [PV] devices · CPC title

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title

• H10F77/12 Primary

  Active materials · CPC title

• Y02E10/549

  Organic PV cells · CPC title