Radio frequency module and communication device

Patent metadata

Field	Value
Publication number	US-11290144-B2
Application number	US-202017128218-A
Country	US
Kind code	B2
Filing date	Dec 21, 2020
Priority date	Dec 26, 2019
Publication date	Mar 29, 2022
Grant date	Mar 29, 2022

Abstract

A radio frequency module includes: a module board including first and second principal surfaces on opposite sides of the module board; a semiconductor integrated circuit (IC) including third and fourth principal surfaces on opposite sides of the semiconductor IC; and an external-connection terminal disposed on the second principal surface. The third principal surface faces the second principal surface and is closer to the second principal surface than the fourth principal surface is to the second principal surface, and the semiconductor IC includes: at least one of (i) a power amplifier (PA) control circuit configured to control a radio frequency component using a control signal, (ii) a low noise amplifier configured to amplify a reception signal, or (iii) a switch; and a signal electrode disposed on the fourth principal surface, and via the signal electrode the semiconductor IC is configured to receive or output a radio frequency signal and/or the control signal.

First claim

The invention claimed is:

1. A radio frequency module, comprising:
a module board including a first principal surface and a second principal surface on opposite sides of the module board;
a semiconductor integrated circuit (IC) including a third principal surface and a fourth principal surface on opposite sides of the semiconductor IC;
an external-connection terminal disposed on the second principal surface; and
a connection electrode disposed on the third principal surface that connects the module board and the semiconductor IC and provides at least part of a signal path between the semiconductor IC and a component on the first principal surface side of the module board,
wherein the third principal surface faces the second principal surface and is closer to the second principal surface than the fourth principal surface is to the second principal surface, and
the semiconductor IC includes
at least one of (i) a control circuit configured to control a radio frequency component using a control signal, (ii) a low noise amplifier configured to amplify a reception signal, or (iii) a switch, and
a signal electrode disposed on the fourth principal surface, and via the signal electrode the semiconductor IC is configured to receive or output at least one of a radio frequency signal or the control signal.

2. The radio frequency module according to claim 1 ,
wherein the semiconductor IC further includes
a ground electrode on the fourth principal surface.

3. The radio frequency module according to claim 1 ,
wherein the signal electrode is connected to a via conductor provided in the semiconductor IC.

4. The radio frequency module according to claim 1 ,
wherein the signal electrode is connected to a side surface electrode provided on a side surface of the semiconductor IC.

5. The radio frequency module according to claim 1 ,
wherein the semiconductor IC includes the low noise amplifier,
an output terminal of the low noise amplifier is connected to a reception output terminal of the radio frequency module, and
the signal electrode is the reception output terminal.

6. The radio frequency module according to claim 1 ,
wherein the semiconductor IC includes the switch,
the switch includes a common terminal and a plurality of selection terminals, and is configured to switch connection between the common terminal and the plurality of selection terminals, the common terminal being connected to an antenna connection terminal, and
the signal electrode is the antenna connection terminal.

7. The radio frequency module according to claim 1 ,
wherein the semiconductor IC includes the control circuit,
the control circuit includes an input terminal and an output terminal, and is configured to output a second control signal to the radio frequency component via the output terminal based on a first control signal received via the input terminal, and
the signal electrode is the input terminal of the control circuit.

8. The radio frequency module according to claim 7 , further comprising:
a power amplifier that is disposed on the first principal surface and is configured to amplify a transmission signal,
wherein the control circuit is configured to output the second control signal to the power amplifier via the output terminal.

9. The radio frequency module according to claim 8 , further comprising:
a first impedance matching circuit connected to an output terminal of the power amplifier and including at least one of an inductor or a capacitor,
wherein the control circuit is disposed on the second principal surface,
the first impedance matching circuit is disposed on the first principal surface, and
in a plan view of the module board, a footprint of the control circuit overlaps with a footprint of the first impedance matching circuit at least partially, and the power amplifier and the first impedance matching circuit are disposed next to each other.

10. The radio frequency module according to claim 1 , further comprising:
an impedance matching circuit connected to an input terminal of the low noise amplifier and including at least one of an inductor or a capacitor; and
a filter connected between the switch and the impedance matching circuit, and configured to pass the reception signal,
wherein the switch is connected between an antenna connection terminal and the filter,
the low noise amplifier and the switch are disposed on the second principal surface,
the impedance matching circuit and the filter are disposed on the first principal surface, and
in a plan view of the module board, a footprint of the low noise amplifier overlaps with a footprint of the impedance matching circuit at least partially, and a footprint of the switch at least partially overlaps with a footprint of the filter.

11. A communication device, comprising:
an antenna;
a radio frequency (RF) signal processing circuit configured to process a radio frequency signal which is transmitted or received by an antenna; and
the radio frequency module configured to transfer the radio frequency signal between the antenna and the Rh signal processing circuit, the radio frequency module including
a module board including a first principal surface and a second principal surface on opposite sides of the module board;
a semiconductor integrated circuit (IC) including a third principal surface and a fourth principal surface on opposite sides of the semiconductor IC,
an external-connection terminal disposed on the second principal surface, and
a connection electrode disposed on the third principal surface that connects the module board and the semiconductor IC and provides at least part of a signal path between the semiconductor IC and a component on the first principal surface side of the module board,
wherein the third principal surface faces the second principal surface and is closer to the second principal surface than the fourth principal surface is to the second principal surface, and
the semiconductor IC includes
at least one of (i) a control circuit configured to control a radio frequency component using a control signal, (ii) a low noise amplifier configured to amplify a reception signal, or (iii) a switch, and
a signal electrode disposed on the fourth principal surface, and via the signal electrode the semiconductor IC is configured to receive or output at least one of a radio frequency signal or the control signal.

12. The communication device according to claim 11 ,
wherein the semiconductor IC further includes
a ground electrode on the fourth principal surface.

13. The communication device according to claim 11 ,
wherein the signal electrode is connected to a via conductor provided in the semiconductor IC.

14. The communication device according to claim 11 ,
wherein the signal electrode is connected to a side surface electrode provided on a side surface of the semiconductor IC.

15. The communication device according to claim 11 ,
wherein the semiconductor IC includes the low noise amplifier,
an output terminal of the low noise amplifier is connected to a reception output terminal of the radio frequency module, and
the signal electrode is the reception output terminal.

16. The communication device according to claim 11 ,
wherein the semiconductor IC includes the switch,
the switch includes a common terminal and a plurality of selection terminals, and is configured to switch connection between the common terminal and the plurality of selection terminals, the common terminal being connected to an antenna connection terminal, and
the signal electrode is the antenna connection ter

Assignees

• Murata Manufacturing Co

Inventors

• Yoshida Daisuke

Classifications

• H04B1/006

  using switches for selecting the desired band (H04B1/0057 takes precedence) · CPC title

• H04B1/0057

  using diplexing or multiplexing filters for selecting the desired band · CPC title

• H04B1/44

  Transmit/receive switching · CPC title

• H04B1/0458

  Arrangements for matching and coupling between power amplifier and antenna or between amplifying stages (matching circuits in general H03H) · CPC title

• H04B1/40 Primary

  Circuits · CPC title