Micro LED transfer method and display module manufactured by the same

US11289462B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11289462-B2
Application numberUS-202016866027-A
CountryUS
Kind codeB2
Filing dateMay 4, 2020
Priority dateMay 7, 2019
Publication dateMar 29, 2022
Grant dateMar 29, 2022

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A display module is provided. The display module includes: a substrate; a thin film transistor (TFT) layer formed on one surface of the substrate; and a plurality of micro LEDs disposed on the TFT layer. The plurality of micro LEDs are transferred from a transfer substrate to the TFT layer by a laser beam radiated to the transfer substrate through openings of a mask. The openings correspond to regions in which the respective micro LEDs of the transfer substrate are arranged and the openings correspond to a width, a length, or a unit area of each of the micro LEDs.

First claim

Opening claim text (preview).

What is claimed is: 1. A display module comprising: a substrate; a thin film transistor (TFT) layer formed on one surface of the substrate; and a plurality of micro light emitting diodes (LEDs) disposed on the TFT layer, wherein the plurality of micro LEDs are transferred from a transfer substrate to the TFT layer by a laser beam radiated to the transfer substrate through openings of a mask that is formed integrally with the transfer substrate, and wherein the openings correspond to regions in which the respective micro LEDs of the transfer substrate are arranged and the openings correspond to a width, a length, or a unit area of each of the micro LEDs. 2. The display module as claimed in claim 1 , wherein the mask is disposed on a first surface of the transfer substrate opposite to a second surface of the transfer substrate on which the plurality of micro LEDs are arranged prior to being transferred from the transfer substrate to the TFT layer by the laser beam. 3. The display module as claimed in claim 2 , wherein each opening of the mask is arranged at a position corresponding to a corresponding micro LED among the plurality of micro LEDs disposed on the transfer substrate prior to being transferred from the transfer substrate to the TFT layer by the laser beam. 4. The display module as claimed in claim 1 , wherein the mask and the plurality of micro LEDs are arranged on a surface of the transfer substrate, and wherein each micro LED of the transfer substrate is inserted into a corresponding opening of the mask prior to being transferred from the transfer substrate to the TFT layer by the laser beam. 5. The display module as claimed in claim 1 , wherein the mask includes a first portion formed on a first surface of the transfer substrate on which the plurality of micro LEDs are arranged prior to being transferred from the transfer substrate to the TFT layer by the laser beam and a second portion formed on a second surface of the transfer substrate. 6. The display module as claimed in claim 1 , wherein the mask comprises a metal material that reflects or absorbs the laser beam. 7. The display module as claimed in claim 6 , wherein the mask comprises chromium (Cr) or an Invar alloy (Ni—Fe-based alloy). 8. The display module as claimed in claim 1 , wherein prior to being transferred from the transfer substrate to the TFT layer by the laser beam, each of the plurality of micro LEDs disposed on the transfer substrate is arranged at a position corresponding to a corresponding opening among the openings of the mask. 9. The display module as claimed in claim 1 , wherein a pitch of the openings of the mask is substantially the same as a pitch of the plurality of micro LEDs on the transfer substrate. 10. A method of manufacturing a display module by transferring a plurality of micro LEDs arranged on a transfer substrate to a target substrate, comprising: loading the transfer substrate and the target substrate onto first and second stages of a transfer apparatus, respectively; moving the target substrate and the transfer substrate to transfer positions; and radiating a concentrated laser beam to regions in which the respective micro LEDs of the transfer substrate are arranged through openings of a mask that is formed integrally with the transfer substrate, each of the openings corresponding to a width, a length, or a unit area of each of the micro LEDs arranged on the transfer substrate. 11. The method of manufacturing a display module as claimed in claim 10 , wherein the openings of the mask are arranged at positions corresponding to the micro LEDs of the transfer substrate. 12. The method of manufacturing a display module as claimed in claim 10 , wherein prior to being transferred from the transfer substrate to the TFT layer by the concentrated laser beam, each of the plurality of micro LEDs disposed on the transfer substrate is arranged at a position corresponding to a corresponding opening among the openings of the mask. 13. The method of manufacturing a display module as claimed in claim 10 , wherein a pitch of the openings of the mask is substantially the same as a pitch of the plurality of micro LEDs on the transfer substrate. 14. A non-transitory computer readable recording medium comprising a program for executing a method of manufacturing a display module by transferring a plurality of micro LEDs arranged on a transfer substrate to a target substrate, wherein the method of manufacturing the display module includes: loading the transfer substrate and the target substrate onto first and second stages of a transfer apparatus, respectively; moving the target substrate and the transfer substrate to transfer positions; and radiating a concentrated laser beam to regions in which the respective micro LEDs of the transfer substrate are arranged through openings of a mask that is formed integrally with the transfer substrate, each of the openings corresponding to a width, a length, or a unit area of each of the micro LEDs arranged on the transfer substrate. 15. The non-transitory computer readable recording medium as claimed in claim 14 , wherein prior to being transferred from the transfer substrate to the TFT layer by the concentrated laser beam, each of the plurality of micro LEDs disposed on the transfer substrate is arranged at a position corresponding to a corresponding opening among the openings of the mask. 16. The non-transitory computer readable recording medium as claimed in claim 14 , wherein a pitch of the openings of the mask is substantially the same as a pitch of the plurality of micro LEDs on the transfer substrate.

Assignees

Inventors

Classifications

  • batch processes · CPC title

  • H10W90/00Primary

    Package configurations · CPC title

  • of bump connectors · CPC title

  • Dispositions, e.g. layouts · CPC title

  • using temporary auxiliary members, e.g. sacrificial coatings · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US11289462B2 cover?
A display module is provided. The display module includes: a substrate; a thin film transistor (TFT) layer formed on one surface of the substrate; and a plurality of micro LEDs disposed on the TFT layer. The plurality of micro LEDs are transferred from a transfer substrate to the TFT layer by a laser beam radiated to the transfer substrate through openings of a mask. The openings correspond to …
Who is the assignee on this patent?
Samsung Electronics Co Ltd
What technology area does this patent fall under?
Primary CPC classification H10W90/00. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 29 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 9 related publications on this page (citations in our corpus or others sharing the same primary CPC).