Semiconductor device and method for producing semiconductor device
US-2019139873-A1 · May 9, 2019 · US
US11289408B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11289408-B2 |
| Application number | US-202017018654-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 11, 2020 |
| Priority date | Sep 20, 2019 |
| Publication date | Mar 29, 2022 |
| Grant date | Mar 29, 2022 |
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Official abstract text for this publication.
A semiconductor device according to one embodiment includes a first leadframe, a second leadframe, a semiconductor chip, and a conductive member. The second leadframe has a first face provided with a recess and is separated from the first leadframe. The semiconductor chip is mounted on the first leadframe. The conductive member has a second face connected to the first face with a conductive adhesive, the second face provided with a protrusion housed in the recess at least partially, and the conductive member electrically connected the semiconductor chip and the second leadframe to each other. The recess and the protrusion are longer in a first direction in which the first face extends than in a second direction along the first face and orthogonal to the first direction.
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: a first leadframe; a second leadframe, which is spaced apart from the first leadframe, has a first face, and is provided with a recess, the recess opening on the first face; a semiconductor chip mounted on the first leadframe; and a conductive member having a second face and a protrusion, the conductive member being configured to electrically connect the semiconductor chip and the second leadframe to each other, the second face being connected to the first face with a conductive adhesive, the protrusion projecting from the second face and being at least partially housed in the recess, the protrusion being connected to an inner face of the recess with the conductive adhesive, wherein the recess is longer in length in a first direction in which the first face extends than in a second direction along the first face and orthogonal to the first direction, the protrusion is longer in length in the first direction than in the second direction, a cross-section of the recess orthogonal to the first direction is geometrically similar to a cross-section of the protrusion orthogonal to the first direction, and the cross-section of the recess is larger than the cross-section of the protrusion. 2. The semiconductor device according to claim 1 , wherein the recess extends in the first direction, and the protrusion extends in the first direction. 3. The semiconductor device according to claim 1 , wherein the recess is spaced apart from both ends of the first face in the first direction. 4. The semiconductor device according to claim 1 , wherein the protrusion is shorter in length than the recess in the first direction. 5. The semiconductor device according to claim 1 , wherein the recess includes a plurality of recesses, the protrusion includes a plurality of protrusions, the first face is provided with the plurality of recesses juxtaposed to each other in the second direction, and the second face is provided with the plurality of protrusions, the protrusions juxtaposed to each other in the second direction, and at least partially housed in the recesses. 6. The semiconductor device according to claim 1 , wherein the recess includes a plurality of recesses, the protrusion includes a plurality of protrusions, the first face is provided with the plurality of recesses spaced apart from each other in the first direction, and the second face is provided with the plurality of protrusions, the protrusions spaced apart from each other in the first direction, and at least partially housed in the recesses. 7. The semiconductor device according to claim 1 , wherein the protrusion is spaced apart from an outer edge of the second face. 8. The semiconductor device according to claim 1 , wherein the recess and the protrusion each have a semicircular cross-section as the cross-section orthogonal to the first direction.
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