Resistance random access memory device and fabricating method of the same

Patent metadata

Field	Value
Publication number	US-11283019-B2
Application number	US-201916704116-A
Country	US
Kind code	B2
Filing date	Dec 5, 2019
Priority date	Dec 31, 2018
Publication date	Mar 22, 2022
Grant date	Mar 22, 2022

Abstract

The present disclosure relates to a resistance random access memory device, including a first electrode, a resistance change layer formed on the first electrode, and a second electrode formed on the resistance change layer, and the resistance change layer includes a bismuth halide-based BiI x Br 3-x thin film (where 0≤x≤3) and/or a Cs 2 AgBiBr x I 6-x thin film (where 0≤x≤6) having an elpasolite structure.

First claim

We claim:

1. A resistance random access memory device, comprising:
a first electrode;
a resistance change layer comprising a Cs 2 AgBiBr x I 6-x thin film (where 0≤x≤6) having an elpasolite structure, and formed on the first electrode; and
a second electrode formed on the resistance change layer,
wherein the first electrode and the second electrode are arranged perpendicular to each other with the resistance change layer containing no lead (Pb) disposed therebetween to form a crossbar array structure, and
wherein the resistance change layer is configured to change in resistance due to a movement of atoms or electrons caused by the movement of I ions or point defects in the resistance change layer.

2. The resistance random access memory device of claim 1 , wherein the resistance random access memory device has a driving voltage in the range of from −1.0 V to +1.0 V.

3. The resistance random access memory device of claim 1 , wherein the first electrode and the second electrode arranged perpendicular to each other are configured to generate a local electric field that is applied to the resistance change layer to move electrons in the resistance change layer.

4. The resistance random access memory device of claim 1 , further comprising:
a polymer protective layer formed on the resistance change layer.

5. The resistance random access memory device of claim 4 , wherein the polymer protective layer contains a polymer selected from the group consisting of polymethyl methacrylate, polyethylene oxide, polypropylene oxide, polydimethylsiloxane, polyacrylonitrile, polyvinyl chloride, polyvinylidene fluoride, polyvinylidene fluoride hexafluoropropylene, polyethyleneimine, polyphenylene terephthalamide, polymethoxy polyethylene glycol methacrylate, poly(2-methoxyethyl glycidyl ether), and combinations thereof.

6. The resistance random access memory device of claim 1 , wherein the first electrode and the second electrode contain each independently a material selected from the group consisting of Pt, Ti, Ag, Au, Ni, Zr, Ta, Zn, Nb, Cr, Co, Mn, Fe, Al, Mg, Si, W, Cu, lanthanum-based metals, nitrides thereof, oxides thereof, and combinations thereof.

Assignees

• Research & Business Found Sungkyunkwan Univ

Inventors

• Jung Hyun Suk
• Lee Sangmyeong
• Kim Won Bin
• Lee Jae Myeong
• Gong Ohyeong

Classifications

• G11C13/0069

  Writing or programming circuits or methods · CPC title

• G11C13/0007

  comprising metal oxide memory material, e.g. perovskites · CPC title

• H01L45/1253

  Electricity · mapped topic

• H01L45/1608

  Electricity · mapped topic

• H01L45/148 Primary

  Electricity · mapped topic