Semiconductor wafer made of single-crystal silicon and process for the production thereof

Patent metadata

Field	Value
Publication number	US-11280026-B2
Application number	US-201816630194-A
Country	US
Kind code	B2
Filing date	Jun 25, 2018
Priority date	Jul 10, 2017
Publication date	Mar 22, 2022
Grant date	Mar 22, 2022

Abstract

A semiconductor wafer made of single-crystal silicon has an oxygen concentration (new ASTM) of not less than 4.9×1017 atoms/cm3 and not more than 6.5×107 atoms/cm3 and a nitrogen concentration (new ASTM) of not less than 8×1012 atoms/cm3 and not more than 5×1013 atoms/cm3, wherein a frontside of the semiconductor wafer is covered with an epitaxial layer made of silicon, wherein the semiconductor wafer comprises BMDs of octahedral shape whose mean size is 13 to 35 nm, and whose mean density is not less than 3×108 cm−3 and not more than 4×109 cm−3, as determined by IR tomography.

First claim

The invention claimed is:

1. A semiconductor wafer comprising single-crystal silicon with an oxygen concentration of not less than 4.9×10 17 atoms/cm 3 and not more than 6.5×10 17 atoms/cm 3 as measured by FTIR according to SEMI MF1188, and a nitrogen concentration of not less than 8×10 12 atoms/cm 3 and not more than 5×10 13 atoms/cm 3 as measured by FTIR against a known standard, wherein a frontside of the semiconductor wafer is covered with an epitaxial layer comprising silicon, and wherein the semiconductor wafer comprises BMDs of octahedral shape whose mean size is from 13 to 35 nm and whose mean density is not less than 3×10 8 cm −3 and not more than 4×10 9 cm −3 as determined by IR tomography, wherein the octahedral BMD shape is stable after a thermal treatment at 1000° C. for 5 hours to a depth of at least 100 μm.

2. The wafer of claim 1 , wherein the wafer has a nickel getter efficiency of at least 80%.

3. The wafer of claim 1 , wherein the TIS (total inner surface) of BMDs, defined as TIS=4*π*r 2 *D, where r=mean radius of BMD and D is the mean BMD density, is from 4.0×10 11 nm 2 /cm 3 to 7.0×10 12 nm 2 /cm 3 .

4. The wafer of claim 1 , wherein the nitrogen concentration is not less than 9×10 12 atoms/cm 3 and not more than 3.5×10 13 atoms/cm 3 .

5. The wafer of claim 1 , wherein the oxygen concentration is not less than 5.15×10 17 atoms/cm 3 and not more than 5.75×10 17 atoms/cm 3 .

6. The wafer of claim 1 , wherein the BMDs of octahedral shape have a mean size of 20 to 27 nm.

7. The wafer of claim 1 , wherein the mean density of octahedral BMDs is not less than 1.0×10 9 cm −3 and not more than 3.0×10 9 cm −3 , as determined by IR tomography.

8. A process for producing a semiconductor wafer of claim 1 made of single-crystal silicon, comprising pulling a single crystal from a melt according to the CZ method in an atmosphere comprising hydrogen, wherein nitrogen has been added to the melt, so that in a section of the single crystal having a uniform diameter the oxygen concentration is not less than 4.9×10 17 atoms/cm 3 and not more than 6.5×10 17 atoms/cm 3 , the nitrogen concentration is not less than 8×10 12 atoms/cm 3 and not more than 5×10 13 atoms/cm 3 ; and the hydrogen concentration is not less than 3×10 13 atoms/cm 3 and not more than 8×10 13 atoms/cm 3 ;
controlling a pulling velocity V such that it is within a span ΔV within which the single crystal in the section having a uniform diameter grows in a Pv region, wherein the pulling velocity V is in a subrange of the span which comprises 39% of the span and a lowest pulling velocity of the span is 26% greater than a pulling velocity at the transition from the Pv region to a Pi region;
and separating the semiconductor wafer from the section of the single crystal having a uniform diameter;
depositing an epitaxial layer of silicon on a frontside of the separated semiconductor wafer to form an epitaxial wafer;
heat treating the epitaxial wafer at a temperature of 1015-1035° C. for 1 to 1.75 hours in an ambient comprising Ar, N 2 , O 2 or mixtures thereof.

9. The process of claim 8 , wherein the epitaxial wafer is heat treated at a temperature of 770-790° C. for 20 to 200 minutes in a first step and at a temperature of 1015-1035° C. for 1 to 1.75 hours in a second and final step.

10. A semiconductor wafer sawn from a single crystal silicon ingot grown in a P v region in the present of hydrogen, comprising single-crystal silicon with an oxygen concentration of not less than 4.9×10 17 atoms/cm 3 and not more than 6.5×10 17 atoms/cm 3 as measured by FTIR according to SEMI MF1188, and a nitrogen concentration of not less than 8×10 12 atoms/cm 3 and not more than 5×10 13 atoms/cm 3 as measured by FTIR against a known standard, wherein a frontside of the semiconductor wafer is covered with an epitaxial layer comprising silicon, and wherein the semiconductor wafer comprises BMDs of octahedral shape whose mean size is from 13 to 35 nm and whose mean density is not less than 3×10 8 cm −3 and not more than 4×10 9 cm −3 as determined by IR tomography, wherein the octahedral BMD shape is stable after a thermal treatment at 1000° C. for 5 hours to a depth of at least 100 μm.

11. The semiconductor wafer of claim 10 which has been treated following deposition of the epitaxial layer comprising silicon, by thermally treating at a temperature of 1015 to 1035° C. for 1 to 1.75 hours in an ambient comprising Ar, N 2 , O 2 , or a mixture thereof, to form the octahedral BMDs.

Assignees

• Siltronic Ag

Inventors

• Mueller Timo
• Sattler Andreas
• Kretschmer Robert
• Kissinger Gudrun
• Kot Dawid

Classifications

• H10P36/20

  Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body · CPC title

• H10P14/3416

  Nitrides · CPC title

• C30B33/02

  Heat treatment (C30B33/04, C30B33/06 take precedence) · CPC title

• C30B29/06 Primary

  Silicon · CPC title

• C30B25/20

  the substrate being of the same materials as the epitaxial layer · CPC title