Film formation apparatus and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-11280023-B2
Application number	US-202016736886-A
Country	US
Kind code	B2
Filing date	Jan 8, 2020
Priority date	Jan 25, 2019
Publication date	Mar 22, 2022
Grant date	Mar 22, 2022

Abstract

A film formation apparatus is configured to epitaxially grow a film on a surface of a substrate, and the film formation apparatus may include: a stage configured to allow the substrate to be mounted thereon; a heater configured to heat the substrate; a mist supply source configured to supply mist of a solution that comprises a solvent and a material of the film dissolved in the solvent; a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist; and a delivery device configured to deliver the mist and the heated gas to the surface of the substrate.

First claim

What is claimed is:

1. A film formation apparatus comprising:
a stage configured to allow a substrate to be mounted thereon;
a heater configured to heat the substrate;
a mist supply source configured to supply mist of a solution that comprises solvent and a material of a film dissolved in the solvent;
a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist; and
a delivery device configured to deliver the mist and the heated gas toward a surface of the substrate, the mist and the heated gas delivered by the delivery device being provided to the surface of the substrate so that the film is epitaxially grown on the surface of the substrate, wherein
the delivery device comprises a first path and a second path provided separately from the first path,
the mist is delivered to the surface of the substrate through the first path, and
the heated gas is delivered to the surface of the substrate through the second path.

2. The film formation apparatus of claim 1 , wherein the solvent is H2O.

3. The film formation apparatus of claim 1 , wherein a first discharge direction along which the first path discharges the mist toward the surface of the substrate is inclined with respect to the surface of the substrate.

4. The film formation apparatus of claim 1 , wherein a traveling path of the mist discharged from the first path toward the surface of the substrate is located between the surface of the substrate and a traveling path of the heated gas discharged from the second path to the surface of the substrate.

5. The film formation apparatus of claim 3 , wherein
the surface of the substrate is an upper surface of the substrate,
a second discharge port from which the second path discharges the heated gas toward the upper surface of the substrate is located above a first discharge port from which the first path discharges the mist toward the upper surface of the substrate,
a second discharge direction along which the second path discharges the heated gas toward the upper surface of the substrate and the first discharge direction along which the first path discharges the mist toward the upper surface of the substrate are inclined to a same side with respect to the upper surface of the substrate, and
an inclination angle of the first discharge direction with respect to the upper surface of the substrate is larger than an inclination angle of the second discharge direction with respect to the upper surface of the substrate.

6. The film formation apparatus of claim 5 , wherein
the upper surface of the substrate is inclined with respect to a horizontal plane,
the first discharge direction is inclined to a lower edge side of the upper surface of the substrate from a perpendicular line standing on the upper surface of the substrate.

7. The film formation apparatus of claim 6 , wherein a sum of an inclination angle of the first discharge direction with respect to the upper surface of the substrate and an inclination angle of the upper surface of the substrate with respect to the horizontal plane is more than 90 degrees.

8. The film formation apparatus of claim 5 , wherein
the inclination angle of the first discharge direction with respect to the upper surface of the substrate is equal to or more than 45 degrees, and
the inclination angle of the second discharge direction with respect to the upper surface of the substrate is less than 45 degrees.

9. The film formation apparatus of claim 1 , wherein
the substrate and a discharge port for the mist are configured rotatable relatively to each other, and
a relative moving speed at a position where a relative moving speed between the substrate and the discharge port is highest while the substrate and the discharge port are rotating relatively to each other is lower than a flow speed of the mist discharged from the discharge port toward the surface of the substrate.

10. The film formation apparatus of claim 1 , wherein
the substrate is rotatable, and
a moving speed at a position where a moving speed of the substrate is highest while the substrate is rotating is higher than a flow speed of the mist discharged from the discharge port toward the surface of the substrate.

11. A method of manufacturing a semiconductor device using a film formation apparatus, wherein the film formation apparatus comprises:
a stage configured to allow a substrate to be mounted thereon;
a heater configured to heat the substrate;
a mist supply source configured to supply mist of a solution comprising solvent and a material of a film dissolved in the solvent;
a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist; and
a delivery device configured to deliver the mist and the heated gas toward a surface of the substrate,
the method comprising delivering the mist and the heated gas from the delivery device to the surface of the substrate so that the film is epitaxially grown on the surface of the substrate, wherein
the delivery device comprises a first path and a second path provided separately from the first path, and
during delivery of the mist and the heated gas from the delivery device to the surface of the substrate, the mist is delivered to the surface of the substrate through the first path, and the heated gas is delivered to the surface of the substrate through the second path.

Assignees

• Nagaoka Tatsuji
• Nishinaka Hiroyuki
• Tahara Daisuke
• Yoshimoto Masahiro
• Denso Corp
• Nat Univ Corp Kyoto Inst Technology

Inventors

• Nagaoka Tatsuji
• Nishinaka Hiroyuki
• Tahara Daisuke
• Yoshimoto Masahiro

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/265

  using solutions · CPC title

• H10P14/3442

  N-type · CPC title

• H10P14/2918

  being semiconductor metal oxides (Group IIB-VIA materials H10P14/2913) · CPC title

• C30B29/16

  Oxides · CPC title