Compound semiconductors and their applications
US-2016204327-A1 · Jul 14, 2016 · US
US11276809B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11276809-B2 |
| Application number | US-201716312842-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 17, 2017 |
| Priority date | Oct 31, 2016 |
| Publication date | Mar 15, 2022 |
| Grant date | Mar 15, 2022 |
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A chalcogen-containing compound that exhibits low thermal conductivity and excellent thermoelectric properties, and exhibits excellent phase stability even at relatively low temperature, a method for preparing the same, and a thermoelectric element including the same.
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The invention claimed is: 1. A chalcogen-containing compound represented by the following Chemical Formula 1: M x Sn y Bi z Se 7 [Chemical Formula 1] wherein, in Chemical Formula 1, M is an alkali metal, x, y and z are mole ratios of M, Sn, and Bi respectively, x is greater than 0.05 and equal to or less than 0.8, y is greater than 3.5 and equal to or less than 4, z is greater than 1.5 and equal to or less than 2, y+z is greater than 5 and equal to or less than 6, and x+y+z is greater than 5 and equal to or less than 6.8. 2. The chalcogen-containing compound according to claim 1 , wherein M is one or more alkali metals selected from the group consisting of Na, and K. 3. The chalcogen-containing compound according to claim 1 , wherein the compound has a crystal structure of a face-centered cubic lattice structure. 4. The chalcogen-containing compound according to claim 3 , wherein M fills a part of a vacancy excluding the sites filled with Se, Sn and Bi in the face-centered cubic lattice structure. 5. The chalcogen-containing compound according to claim 3 , wherein the Se fills anion sites of the face-centered cubic lattice structure, the Sn and Bi fill cation sites of the face-centered cubic lattice structure, and the M fills a part of a vacancy of remaining cation sites, excluding the sites filled with Sn and Bi. 6. The chalcogen-containing compound according to claim 1 , wherein the compound is suitable for use as a thermoelectric conversion material. 7. A method for preparing the chalcogen-containing compound of claim 1 , comprising the steps of: progressing a solid phase reaction of a mixture comprising raw materials comprising Sn, Bi and Se, and raw material comprising alkali metal; grinding the product of the solid phase reaction; and sintering the ground product. 8. The method for preparing a chalcogen-containing compound according to claim 7 , wherein the raw material comprising alkali metal comprises M 2 Se powder, wherein M is an alkali metal. 9. The method for preparing a chalcogen-containing compound according to claim 7 , wherein the raw materials comprising Sn, Bi and Se are each a powder and the raw material comprising alkali metal is a powder, and wherein the solid phase reaction is performed at a temperature of 500 to 700° C., for each powder raw material. 10. The method for preparing a chalcogen-containing compound according to claim 7 , further comprising a step of cooling a product of the solid phase reaction to form an ingot, between the solid phase reaction step and the grinding step. 11. The method for preparing a chalcogen-containing compound according to claim 7 , wherein the sintering step is performed by a spark plasma sintering method. 12. The method for preparing a chalcogen-containing compound according to claim 7 , wherein the sintering step is performed at a temperature of 550° C. or more and a pressure of 10 MPa or more. 13. A thermoelectric element comprising the chalcogen-containing compound according to claim 1 , as a thermoelectric conversion material.
cube-like · CPC title
by unit-cell parameters, atom positions or structure diagrams · CPC title
Electric properties · CPC title
by d-values or two theta-values, e.g. as X-ray diagram · CPC title
Thermal properties · CPC title
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