Photovoltaic structures having multiple absorber layers separated by a diffusion barrier

Patent metadata

Field	Value
Publication number	US-11276796-B2
Application number	US-201916438205-A
Country	US
Kind code	B2
Filing date	Jun 11, 2019
Priority date	Jan 18, 2017
Publication date	Mar 15, 2022
Grant date	Mar 15, 2022

Abstract

Photovoltaic structures having multiple absorber layers separated by a diffusion barrier are provided. In one aspect, a method of forming an absorber on a substrate includes: depositing a first layer of light absorbing material on the substrate; depositing a diffusion barrier; depositing a second layer of light absorbing material on the diffusion barrier, wherein the first layer of light absorbing material has a different band gap from the second layer of light absorbing material; and annealing the absorber, wherein the diffusion barrier prevents diffusion of elements between the first layer of light absorbing material and the second layer of light absorbing material during the annealing. A solar cell and method for formation thereof are also provided.

First claim

What is claimed is:

1. A solar cell, comprising:
a substrate;
a layer of a conductive material on the substrate;
an absorber on the layer of conductive material, the absorber comprising: i) a first layer of light absorbing material on the layer of conductive material, ii) a diffusion barrier directly on the first layer of light absorbing material, iii) a second layer of light absorbing material directly on the diffusion barrier to form a stack of layers of light absorbing materials on the layer of conductive material, wherein the second layer of light absorbing material has both a different elemental composition and a different sulfur concentration than the first layer of light absorbing material such that the second layer of light absorbing material has a higher band gap than the first layer of light absorbing material;
a buffer layer on the absorber, wherein the buffer layer forms a p-n junction with the absorber;
a transparent front contact on the buffer layer; and
a metal grid on the transparent front contact.

2. The solar cell of claim 1 , wherein the diffusion barrier comprises a material selected from the group consisting of: graphene, titanium nitride, tantalum nitride, and tungsten nitride.

3. The solar cell of claim 1 , wherein the diffusion barrier comprises graphene.

4. The solar cell of claim 3 , wherein the diffusion barrier comprises from about 1 layer to about 5 layers of graphene.

5. The solar cell of claim 1 , wherein the first layer of light absorbing material comprises copper, zinc, tin, and at least one of sulfur and selenium.

6. The solar cell of claim 5 , wherein the second layer of light absorbing material consists of comprises silver, zinc, tin, and at least one of sulfur and selenium.

7. The solar cell of claim 1 , wherein the first layer of light absorbing material comprises copper, zinc, tin, and selenium.

8. The solar cell of claim 7 , wherein the second layer of light absorbing material comprises copper, zinc, tin, sulfur, and selenium.

9. The solar cell of claim 1 , wherein the absorber further comprises:
v) an additional diffusion barrier directly on the second layer of light absorbing material and vi) an additional layer of light absorbing material directly on the additional diffusion barrier, wherein the additional layer of light absorbing material has a higher band gap than both the first layer of light absorbing material and the second layer of light absorbing material.

10. The solar cell of claim 9 , wherein the first layer of light absorbing material comprises copper, zinc, tin, and selenium with a first sulfur to selenium ratio of 0, wherein the second layer of light absorbing material comprises copper, zinc, tin, sulfur, and selenium with a second sulfur to selenium ratio of between 0 and 1, and wherein the additional layer of light absorbing material comprises copper, zinc, tin, and sulfur with a third sulfur to selenium ratio of 1.

11. The solar cell of claim 1 , wherein the second layer of light absorbing material has a greater sulfur concentration than the first layer of light absorbing material.

12. The solar cell of claim 1 , wherein the substrate comprises a material selected from the group consisting of: glass, ceramic, metal foil, and plastic.

13. The solar cell of claim 1 , wherein the conductive material is selected from the group consisting of: molybdenum, molybdenum trioxide, gold, nickel, tantalum, tungsten, aluminum, platinum, titanium nitride, silicon nitride, and combinations thereof.

14. A solar cell, comprising:
a substrate;
a layer of a conductive material on the substrate;
an absorber on the layer of conductive material, the absorber comprising: i) a first layer of light absorbing material on the layer of conductive material, ii) a diffusion barrier directly on the first layer of light absorbing material, iii) a second layer of light absorbing material directly on the diffusion barrier, v) an additional diffusion barrier directly on the second layer of light absorbing material, and vi) an additional layer of light absorbing material directly on the additional diffusion barrier, to form a stack of layers of light absorbing materials on the layer of conductive material, wherein the second layer of light absorbing material has a higher band gap than the first layer of light absorbing material; and wherein the additional layer of light absorbing material has both a different elemental composition and a different sulfur concentration than the first layer of light absorbing material and the second layer of light absorbing material such that the additional layer of light absorbing material has a higher band gap than both the first layer of light absorbing material and the second layer of light absorbing material;
a buffer layer on the absorber, wherein the buffer layer forms a p-n junction with the absorber;
a transparent front contact on the buffer layer; and
a metal grid on the transparent front contact.

15. The solar cell of claim 14 , wherein the diffusion barrier comprises a material selected from the group consisting of: graphene, titanium nitride, tantalum nitride, and tungsten nitride.

16. The solar cell of claim 14 , wherein the diffusion barrier comprises graphene.

17. The solar cell of claim 16 , wherein the diffusion barrier comprises from about 1 layer to about 5 layers of graphene.

18. The solar cell of claim 14 , wherein the first layer of light absorbing material comprises copper, zinc, tin, and at least one of sulfur and selenium, and wherein the second layer of light absorbing material consists of silver, zinc, tin, and at least one of sulfur and selenium.

19. The solar cell of claim 14 , wherein the first layer of light absorbing material comprises copper, zinc, tin, and selenium, and wherein the second layer of light absorbing material comprises copper, zinc, tin, sulfur, and selenium.

20. The solar cell of claim 14 , wherein the first layer of light absorbing material comprises copper, zinc, tin, and selenium with a first sulfur to selenium ratio of 0, wherein the second layer of light absorbing material comprises copper, zinc, tin, sulfur, and selenium with a second sulfur to selenium ratio of between 0 and 1, and wherein the additional layer of light absorbing material comprises copper, zinc, tin, and sulfur with a third sulfur to selenium ratio of 1.

Assignees

• IBM

Inventors

• Antunez Priscilla D
• Ellis Arthur W
• Haight Richard A
• Hannon James B
• Oida Satoshi

Classifications

• H10F77/128

  comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4 · CPC title

• H10F77/14

  Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies · CPC title

• H10F71/128

  Annealing · CPC title

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title

• H10F10/161 Primary

  comprising multiple PN heterojunctions, e.g. tandem cells · CPC title