Pattern part, method for forming pattern part and method for manufacturing display device using same

US11276737B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11276737-B2
Application numberUS-201916662712-A
CountryUS
Kind codeB2
Filing dateOct 24, 2019
Priority dateNov 14, 2018
Publication dateMar 15, 2022
Grant dateMar 15, 2022

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method of forming a pattern part includes forming a first film on a target object, the first film having a first cure shrinkage ratio, forming a second film on the first film, the second film having a second cure shrinkage ratio greater than the first cure shrinkage ratio, and patterning the first film and the second film to form a pattern.

First claim

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What is claimed is: 1. A method of forming a pattern part, the method comprising: forming a first film on a target object, the first film having a first cure shrinkage ratio; forming a second film on the first film, the second film having a second cure shrinkage ratio greater than the first cure shrinkage ratio; and patterning the first film and the second film to form a pattern. 2. The method as claimed in claim 1 , wherein the pattern includes: a first pattern formed by patterning the first film; and a second pattern formed by patterning the second film. 3. The method as claimed in claim 2 , further comprising a first curing step for curing the first film and the second film after forming the second film. 4. The method as claimed in claim 3 , further comprising a second curing step for curing the pattern after forming the pattern. 5. The method as claimed in claim 4 , wherein the second curing step includes: a first temperature curing step for curing the pattern at a first temperature; and a second temperature curing step for curing the pattern at a second temperature lower than the first temperature. 6. The method as claimed in claim 4 , wherein, in the second curing step, a degree of shrinkage of the second pattern is greater than a degree of shrinkage of the first pattern. 7. The method as claimed in claim 1 , wherein: in the forming of the first film, the first film is formed in a first thickness, and in the forming of the second film, the second film is formed in a second thickness larger than the first thickness. 8. The method as claimed in claim 1 , wherein the first film includes a first monomer, the second film includes a second monomer, and a number of functional groups of the second monomer is more than a number of functional groups of the first monomer. 9. The method as claimed in claim 1 , further comprising forming a third film on the second film, wherein the third film is patterned in the forming of the pattern. 10. The method as claimed in claim 9 , wherein the third film has a third cure shrinkage ratio greater than the second cure shrinkage ratio. 11. The method as claimed in claim 9 , wherein the first film includes a first monomer, the second film includes a second monomer, the third film includes a third monomer, a number of functional groups of the second monomer is more than a number of functional groups of the first monomer, and a number of functional groups of the third monomer is more than a number of functional groups of the second monomer. 12. The method as claimed in claim 1 , further comprising forming a sacrificial layer on the target object, wherein the first film is formed on the sacrificial layer such that the first film is interposed between the second film and the sacrificial layer. 13. The method as claimed in claim 12 , further comprising patterning the sacrificial layer to form a sacrificial pattern after the forming of the pattern, wherein the sacrificial pattern is formed to have an undercut shape with respect to the pattern such that the patterned first and second films extend laterally beyond an upper surface of the sacrificial pattern. 14. A method of manufacturing a display device, the method comprising: forming a circuit layer on a base layer; forming a pixel definition film that defines a pixel region on the circuit layer; forming a sacrificial layer that covers the pixel definition film; forming a first film on the sacrificial layer; forming a second film including a material different from that of the first film; patterning the first film, the second film, and the sacrificial layer to form a first pattern, a second pattern and a sacrificial pattern; forming a light-emitting layer on the pixel region; and removing the first pattern, the second pattern, and the sacrificial pattern. 15. The method as claimed in claim 14 , wherein the first film has a first cure shrinkage ratio, and the second film has a second cure shrinkage ratio greater than the first cure shrinkage ratio. 16. The method as claimed in claim 14 , wherein the first film includes a first monomer, the second film includes a second monomer, and a number of functional groups of the second monomer is more than a number of functional groups of the first monomer. 17. The method as claimed in claim 14 , wherein in the forming of the first film, the first film is formed in a first thickness, and in the forming the second film, the second film is formed in a second thickness larger than the first thickness. 18. The method as claimed in claim 14 , wherein: the pixel region is one of a plurality of pixel regions, the plurality of pixel regions include first pixel regions, second pixel regions, and third pixel regions, and in the forming of the first pattern, the second pattern, and the sacrificial pattern, the first pattern, the second pattern, and the sacrificial pattern are formed to cover all of the first pixel regions and the second pixel regions and to expose the third pixel regions. 19. The method as claimed in claim 14 , further comprising curing the first pattern, the second pattern, and the sacrificial pattern, wherein the curing includes: a first temperature curing step for providing a first temperature; and a second temperature curing step for providing a second temperature lower than the first temperature. 20. The method as claimed in claim 14 , wherein the sacrificial pattern has an undercut shape with respect to the first pattern. 21. A pattern part, comprising: a sacrificial pattern disposed on a target object; a first pattern disposed on the sacrificial pattern and having a first cure shrinkage ratio; and a second pattern disposed on the first pattern and having a second cure shrinkage ratio, wherein the second cure shrinkage ratio is greater than the first cure shrinkage ratio, and wherein each of the first and second patterns protrudes more than a side surface of the sacrificial pattern, and the side surface of the sacrificial pattern is exposed. 22. The pattern part as claimed in claim 21 , wherein a thickness of the second pattern is larger than a thickness of the first pattern. 23. The pattern part as claimed in claim 21 , wherein the sacrificial pattern has an undercut shape with respect to the first pattern.

Assignees

Inventors

Classifications

  • H10P76/20Primary

    of masks comprising organic materials · CPC title

  • Thermal treatment, e.g. annealing in the presence of a solvent vapour · CPC title

  • Encapsulations · CPC title

  • Pixel-defining structures or layers, e.g. banks · CPC title

  • H10K59/35Primary

    comprising red-green-blue [RGB] subpixels · CPC title

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Frequently asked questions

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What does patent US11276737B2 cover?
A method of forming a pattern part includes forming a first film on a target object, the first film having a first cure shrinkage ratio, forming a second film on the first film, the second film having a second cure shrinkage ratio greater than the first cure shrinkage ratio, and patterning the first film and the second film to form a pattern.
Who is the assignee on this patent?
Samsung Display Co Ltd
What technology area does this patent fall under?
Primary CPC classification H10P76/20. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 15 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).