Semiconductor device

Patent metadata

Field	Value
Publication number	US-11276626-B2
Application number	US-202017025863-A
Country	US
Kind code	B2
Filing date	Sep 18, 2020
Priority date	Jun 1, 2018
Publication date	Mar 15, 2022
Grant date	Mar 15, 2022

Abstract

In a semiconductor device including gate fingers each having a linear shape extending from a feed line, and arranged in areas between drain electrodes and source electrodes, open stubs are connected directly to the feed line.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a semiconductor substrate;
a plurality of drain electrodes, each of the drain electrodes being disposed along one direction on the semiconductor substrate;
a plurality of source electrodes, each of the source electrodes being disposed in an area between corresponding adjacent two of the drain electrodes on the semiconductor substrate, and being disposed along the one direction;
a feed line being disposed on the semiconductor substrate, and having a band shape extending in the one direction;
a plurality of gate fingers, each of the gate fingers having a linear shape extending from the feed line, and being disposed in an area between two adjacent electrodes on the semiconductor substrate, one of the two adjacent electrodes being a corresponding one of the drain electrodes and the other being a corresponding one of the source electrodes; and
an input line disposed on the semiconductor substrate;
an air bridge connecting the feed line and the input line;

a plurality of open stubs being disposed on the semiconductor substrate, and having a line length that eliminates a target higher harmonic wave, and each of the open stubs passing under the air bridge and being connected directly to the feed line.

2. The semiconductor device according to claim 1 , wherein the open stubs are arranged so as to correspond one-to-one to the gate fingers.

3. The semiconductor device according to claim 1 , wherein the open stubs are made from a metallic material identical to that of the gate fingers.

4. A semiconductor device comprising:
a semiconductor substrate;
a plurality of drain electrodes, each of the drain electrodes being disposed along one direction on the semiconductor substrate;
a plurality of source electrodes, each of the source electrodes being disposed in an area between corresponding adjacent two of the drain electrodes on the semiconductor substrate, and being disposed along the one direction;
a feed line being disposed on the semiconductor substrate, and having a band shape extending in the one direction;
a plurality of gate fingers, each of the gate fingers having a linear shape extending from the feed line, being disposed in an area between two adjacent electrodes on the semiconductor substrate, one of the two adjacent electrodes being the drain electrode and the other being the source electrode;
an input line disposed on the semiconductor substrate;
an air bridge connecting the feed line and the input line;
an MIM capacitance being disposed on the semiconductor substrate;
a via conductor being connected to the MIM capacitance; and
a plurality of inductance lines being disposed on the semiconductor substrate, each of the inductance lines being connected to the MIM capacitance on one end, passing under the air bridge, and being connected directly to the feed line on the other end.

5. The semiconductor device according to claim 4 , wherein the inductance lines are arranged so as to correspond one-to-one to the gate fingers.

Assignees

• Mitsubishi Electric Corp

Inventors

• Yamaguchi Yutaro
• Hangai Masatake
• Shinjo Shintaro
• Yamanaka Koji

Classifications

• H10W44/241

  for passive devices or passive elements · CPC title

• H10W44/20

  at high-frequency [HF] or radio frequency [RF] · CPC title

• H10W20/483

  Interconnections over air gaps, e.g. air bridges · CPC title

• H10W20/427

  Power or ground buses · CPC title

• H10W44/216

  Waveguides, e.g. strip lines · CPC title