Connecting structure of a conductive layer

Patent metadata

Field	Value
Publication number	US-11276580-B2
Application number	US-201916296646-A
Country	US
Kind code	B2
Filing date	Mar 8, 2019
Priority date	Apr 6, 2018
Publication date	Mar 15, 2022
Grant date	Mar 15, 2022

Abstract

A connecting structure of a conductive layer includes a first conductive layer, a first insulating layer disposed on the first conductive layer and including a first opening overlapping the first conductive layer, a connecting conductor disposed on the first insulating layer and connected to the first conductive layer through the first opening, an insulator island disposed on the connecting conductor, a second insulating layer disposed on the first insulating layer and including a second opening overlapping the connecting conductor and the insulator island, and a second conductive layer disposed on the second insulating layer and connected to a connecting electrode through the second opening. A sum of a thickness of the first insulating layer and a thickness of the second insulating layer is greater than or equal to 1 μm, and each of the thicknesses of the first and second insulating layers is less than 1 μm.

First claim

What is claimed is:

1. A connecting structure of a conductive layer, comprising:
a first conductive layer;
a first insulating layer disposed on the first conductive layer and including a first opening overlapping the first conductive layer;
a connecting conductor disposed on the first insulating layer and connected to the first conductive layer through the first opening;
an insulator island disposed on the connecting conductor disposed in the first opening, wherein an uppermost surface of the insulator island and an upper surface of the connecting conductor are coplanar, wherein an uppermost surface of the first insulating layer is at a height different from those of the uppermost surface of insulator island and the upper surface of the connecting conductor;
a second insulating layer disposed on the first insulating layer and including a second opening overlapping the connecting conductor and the insulator island; and
a second conductive layer disposed on the second insulating layer and connected to a connecting electrode through the second opening, wherein a sum of a thickness of the first insulating layer and a thickness of the second insulating layer is greater than or equal to 1 μm, and each of the thicknesses of the first and second insulating layers is less than 1 μm,
wherein a portion of the connecting conductor is disposed under the insulating island and contacts a whole of a lower surface of the insulator island.

2. The connecting structure of the conductive layer of claim 1 , wherein the connecting conductor includes:
a first portion disposed on the first insulating layer,
a second portion disposed on a lateral surface of the first opening, and
a third portion connected to the first conductive layer.

3. The connecting structure of the conductive layer of claim 2 , wherein the insulator island is disposed on the third portion.

4. The connecting structure of the conductive layer of claim 3 , wherein an extension line of an upper surface of the insulator island is the same as an extension line of an upper surface of the first portion.

5. The connecting structure of the conductive layer of claim 4 , wherein the second opening overlaps some of the first portion.

6. The connecting structure of the conductive layer of claim 5 , wherein a width of the first opening is substantially the same as that of the second opening.

7. The connecting structure of the conductive layer of claim 6 , wherein the second conductive layer includes:
a fourth portion disposed on the second insulating layer,
a fifth portion disposed on a lateral surface of the second opening, and
a sixth portion connected to the first portion.

8. The connecting structure of the conductive layer of claim 7 , wherein the sixth portion is disposed on some of the first portion and on the insulator island.

9. The connecting structure of the conductive layer of claim 1 , wherein the second insulating layer and the insulator island include substantially the same material.

10. The connecting structure of the conductive layer of claim 1 , wherein the connecting conductor includes a third opening, wherein the insulator island is disposed in the third opening and is separated from the first insulating layer.

11. The connecting structure of the conductive layer of claim 1 , wherein a width of the insulator island is smaller than a width of the first conductive layer.

Assignees

• Samsung Display Co Ltd

Inventors

• Bae Su Bin
• Jeong Yu-Gwang
• Choi Shin Il
• Kim Sang Gab
• Lee Joon Geol

Classifications

• H10P76/20

  of masks comprising organic materials · CPC title

• H10W20/089

  using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning · CPC title

• H10W10/041

  of isolation regions comprising polycrystalline semiconductor materials · CPC title

• H10W10/40

  Isolation regions comprising polycrystalline semiconductor materials · CPC title

• H10P50/73 Primary

  using masks for insulating materials · CPC title