Silicon rod crushing method and apparatus, and method of producing silicon lumps

Patent metadata

Field	Value
Publication number	US-11273451-B2
Application number	US-201916427834-A
Country	US
Kind code	B2
Filing date	May 31, 2019
Priority date	Jun 12, 2018
Publication date	Mar 15, 2022
Grant date	Mar 15, 2022

Abstract

A silicon rod crushing method relatively moves an application position of high-voltage pulse discharge to a silicon rod in a longitudinal direction thereof while rotating the silicon rod to thereby crush the silicon rod.

First claim

What is claimed is:

1. A silicon rod crushing method comprising:
using a silicon rod crushing apparatus to relatively move an application position of a high-voltage pulse discharge to a silicon rod in a longitudinal direction thereof while rotating the silicon rod to thereby crush the silicon rod,
wherein the silicon rod crushing apparatus comprises:
a container that houses therein the silicon rod;
a rotary support mechanism that rotatably supports the silicon rod in the container, and is configured to rotate the silicon rod around a central longitudinal axis of the silicon rod;
a high-voltage pulse discharge device configured to apply high-voltage pulse discharge to the silicon rod; and
a moving mechanism configured to move the application position of the high-voltage pulse discharge along the longitudinal direction of the silicon rod relative to the silicon rod,
wherein the silicon rod crushing apparatus is configured to crush the silicon rod by moving the application position of the high-voltage pulse discharge in a longitudinal direction of the silicon rod while rotating the silicon rod around the central longitudinal axis of the silicon rod in the container.

2. The silicon rod crushing method as claimed in claim 1 , wherein
the silicon rod is placed on a looped endless sheet, and
the endless sheet is rotated to rotate the silicon rod.

3. The silicon rod crushing method as claimed in claim 2 , wherein
a height position of one loop end of the endless sheet is made lower than a height position of a center of the silicon rod, and
the silicon rod is rotated such that the application position of the high-voltage pulse discharge to the silicon rod goes toward the one loop end of the endless sheet.

4. The silicon rod crushing method as claimed in claim 1 , wherein
the silicon rod is placed on a pair of parallel rollers, and
the parallel rollers are rotated to rotate the silicon rod.

5. The silicon rod crushing method as claimed in claim 1 , wherein
at least two electrodes are provided near an outer peripheral surface of the silicon rod, and
the electrodes are moved relative to the silicon rod to move the application position of high-voltage pulse discharge by the electrodes along the longitudinal direction of the silicon rod.

6. The silicon rod crushing method as claimed in claim 5 , wherein
the silicon rod is housed in a container together with liquid to set into the liquid, and
at least one of the container and electrode pair are relatively moved to the silicon rod to move the application position of the high-voltage pulse discharge by the electrodes in the longitudinal direction of the silicon rod.

7. The silicon rod crushing method as claimed in claim 6 , wherein the endless sheet is driven by using a drive source provided outside the container.

8. The silicon rod crushing method as claimed in claim 1 , wherein
a plurality of collection containers are provided below the silicon rod so as to be arranged along the longitudinal direction of the silicon rod, and
silicon lumps obtained by crushing the silicon rod are made to fall down into the collection containers.

9. The silicon rod crushing method as claimed in claim 8 , wherein the collection containers are made of resin and have a structure having many holes or a mesh structure.

10. A silicon rod crushing apparatus comprising:
a. container configured to house therein a silicon rod;
a rotary support mechanism that rotatably supports the silicon rod in the container, and is configured to rotate the silicon rod around a central longitudinal axis of the silicon rod;
a high-voltage pulse discharge device configured to apply high-voltage pulse discharge to the silicon rod; and
a moving mechanism configured to move an application position of the high-voltage pulse discharge along a longitudinal direction of the silicon rod relative to the silicon rod,
wherein the silicon rod crushing apparatus is configured to crush the silicon rod by moving the application position of the high-voltage pulse discharge in a longitudinal direction of the silicon rod while rotating the silicon rod around the central longitudinal axis of the silicon rod in the container.

11. The silicon rod crushing apparatus as claimed in claim 10 , wherein
the rotary support mechanism includes a looped endless sheet, and
the endless sheet is configured to be rotated in a state where the silicon rod is placed thereon to rotate the silicon rod.

12. The silicon rod crushing apparatus as claimed in claim 11 , wherein
the rotary support mechanism further includes a first rotary shaft that supports one loop end of the endless sheet and a second rotary shaft that supports the other loop end of the endless sheet,
the first rotary shaft is disposed in the container such that a height position of the one loop end of the endless sheet is lower than a height position of a center of the silicon rod,
the second rotary shaft is disposed above the first rotary shaft such that a height position of the other loop end of the endless sheet is higher than the height position of the center of the silicon rod, and
the silicon rod is rotated such that silicon lumps obtained by crushing the silicon rod due to application of the high-voltage pulse discharge are directed to the one loop end.

13. The silicon rod crushing apparatus as claimed in claim 10 , wherein the rotary support mechanism includes a pair of parallel rollers, and the parallel rollers are configured to be rotated with the silicon rod placed on the parallel rollers to rotate the silicon rod.

14. The silicon rod crushing apparatus as claimed in claim 10 , wherein
the high-voltage pulse discharge device has at least two electrodes disposed near an outer peripheral surface of the silicon rod, and
the moving mechanism is configured to move the container in the longitudinal direction of the silicon rod to move, relative to the silicon rod, the positions of the electrodes along the longitudinal direction of the silicon rod.

15. The silicon rod crushing apparatus as claimed in claim 14 , wherein a drive source for rotating the silicon rod is provided outside the container.

16. The silicon rod crushing apparatus as claimed in in claim 10 , further comprising a plurality of collection containers which are provided below the silicon rod so as to be arranged along the longitudinal direction of the silicon rod, and silicon lumps obtained by crushing the silicon rod are made to fall down into the plurality of collection containers.

17. The silicon rod crushing apparatus as claimed in claim 16 , wherein the collection containers have a resin structure having many holes, or a resin mesh structure.

18. A method of producing silicon lumps comprising:
producing a silicon rod, and
crushing the silicon rod using a silicon rod crushing apparatus to relatively move an application position of a high-voltage pulse discharge to the silicon rod in a longitudinal direction thereof while rotating the silicon rod to thereby crush the silicon rod,
wherein the silicon rod crushing apparatus comprises:
a container that houses therein the silicon rod;
a rotary support mechanism that rotatably supports the silicon rod in the container, and is configured to rotate the silicon rod around a central longitudinal axis of the silicon rod;
a high-voltage pulse discharge device configured to apply high-voltage pulse discharge to the silicon rod; and
a moving mechanism configured to move the application position of the high-voltage pulse discharge along the longitudinal direction of the silicon

Assignees

• Sumco Corp

Inventors

• Ibaragi Hiromi

Classifications

• B02C19/18 Primary

  Use of auxiliary physical effects, e.g. ultrasonic waves or irradiation, for disintegrating · CPC title

• B02C23/36

  the crushing or disintegrating zone being submerged in liquid · CPC title

• C01B33/02 Primary

  Silicon (forming single crystals or homogeneous polycrystalline material with defined structure C30B) · CPC title

• B02C19/0056

  specially adapted for specific materials not otherwise provided for · CPC title

• B02C2019/183

  Crushing by discharge of high electrical energy · CPC title