Bulk acoustic wave resonator

Patent metadata

Field	Value
Publication number	US-11271543-B2
Application number	US-201816193529-A
Country	US
Kind code	B2
Filing date	Nov 16, 2018
Priority date	Feb 13, 2018
Publication date	Mar 8, 2022
Grant date	Mar 8, 2022

Abstract

A bulk acoustic wave resonator includes: a substrate; a first electrode disposed above the substrate; a piezoelectric layer disposed above at least a portion of the first electrode; and a second electrode disposed above at least a portion of the piezoelectric layer. A first gap is formed between the piezoelectric layer and one of the first and second electrodes. The first gap includes a first inner gap disposed in an active area of the bulk acoustic wave resonator, and having a first spacing distance between the piezoelectric layer and the one of the first and second electrodes, and a first outer gap disposed outwardly of the active area and having a second spacing distance, different than the first spacing distance, between the piezoelectric layer and the one of the first and second electrodes.

First claim

What is claimed is:

1. A bulk acoustic wave resonator, comprising:
a substrate;
a first electrode disposed over the substrate;
a piezoelectric layer disposed over at least a portion of the first electrode such that the first electrode and the piezoelectric layer are spaced apart from each other by a constant distance; and
a second electrode disposed over at least a portion of the piezoelectric layer,
wherein a first gap is disposed between the piezoelectric layer and the second electrode, and
wherein the first gap comprises:
a first inner gap disposed in an active area of the bulk acoustic wave resonator, and having a first spacing distance between the piezoelectric layer and the one of the first and second electrodes, and
a first outer gap disposed outwardly of the active area and having a second spacing distance, greater than the first spacing distance, between the piezoelectric layer and the one of the first and second electrodes.

2. The bulk acoustic wave resonator of claim 1 , wherein the one of the first and second electrodes comprises an inclined surface that forms the first outer gap.

3. The bulk acoustic wave resonator of claim 1 , wherein the one of the first and second electrodes has a curved surface that forms the first outer gap.

4. The bulk acoustic wave resonator of claim 1 , further comprising a surface treatment layer disposed on the piezoelectric layer.

5. The bulk acoustic wave resonator of claim 1 , wherein the first gap is filled with a gas having a dielectric constant higher than a dielectric constant of air.

6. The bulk acoustic wave resonator of claim 1 , further comprising:
a spacer disposed between the piezoelectric layer and the one of the first and second electrodes.

7. The bulk acoustic wave resonator of claim 1 , wherein the piezoelectric layer and the second electrode form a first capacitor portion having a first capacitance in the first inner gap, and
the piezoelectric layer and the second electrode form a second capacitor portion having a second capacitance different from the first capacitance peripheral to the first inner gap.

8. A bulk acoustic wave resonator, comprising:
a substrate;
a first electrode disposed over the substrate;
a piezoelectric layer disposed over at least a portion of the first electrode; and
a second electrode disposed over at least a portion of the piezoelectric layer such that the second electrode and the piezoelectric layer are spaced apart from each other by a constant distance,
wherein a first gap is disposed between the piezoelectric layer and the first electrode, and
wherein the first gap comprises:
a first inner gap disposed in an active area of the bulk acoustic wave resonator, and having a first spacing distance between the piezoelectric layer and the one of the first and second electrodes, and
a first outer gap disposed outwardly of the active area and having a second spacing distance, greater than the first spacing distance, between the piezoelectric layer and the one of the first and second electrodes.

9. The bulk acoustic wave resonator of claim 8 , wherein the piezoelectric layer and the first electrode form a first capacitor portion having a first capacitance in the first inner gap, and
the piezoelectric layer and the first electrode form a second capacitor portion having a second capacitance different from the first capacitance peripheral to the first inner gap.

10. A bulk acoustic wave resonator, comprising:
a substrate;
a first electrode disposed over the substrate;
a piezoelectric layer disposed over at least a portion of the first electrode; and
a second electrode disposed over at least a portion of the piezoelectric layer,
wherein a first gap is disposed between the piezoelectric layer and one of the first and second electrodes,
wherein the first gap comprises:
a first inner gap disposed in an active area of the bulk acoustic wave resonator, and having a first spacing distance between the piezoelectric layer and the one of the first and second electrodes; and
a first outer gap disposed outwardly of the active area and having a second spacing distance, different than the first spacing distance, between the piezoelectric layer and the one of the first and second electrodes, and

wherein the piezoelectric layer comprises an inclined surface that forms the first outer gap.

11. The bulk acoustic wave resonator of claim 10 , wherein the piezoelectric layer and the one of the first and second electrodes form a first capacitor portion having a first capacitance in the first inner gap, and
the piezoelectric layer and the one of the first and second electrodes form a second capacitor portion having a second capacitance different from the first capacitance peripheral to the first inner gap.

12. A bulk acoustic wave resonator, comprising:
a substrate;
a first electrode disposed over the substrate;
a piezoelectric layer disposed over at least a portion of the first electrode; and
a second electrode disposed over at least a portion of the piezoelectric layer,
wherein a first gap is disposed between the piezoelectric layer and one of the first and second electrodes,
wherein the first gap comprises:
a first inner gap disposed in an active area of the bulk acoustic wave resonator, and having a first spacing distance between the piezoelectric layer and the one of the first and second electrodes; and
a first outer gap disposed outwardly of the active area and having a second spacing distance, less than the first spacing distance, between the piezoelectric layer and the one of the first and second electrodes.

13. The bulk acoustic wave resonator of claim 12 , wherein the piezoelectric layer and the one of the first and second electrodes form a first capacitor portion having a first capacitance in the first inner gap, and
the piezoelectric layer and the one of the first and second electrodes form a second capacitor portion having a second capacitance different from the first capacitance peripheral to the first inner gap.

14. A bulk acoustic wave resonator, comprising:
a substrate;
a first electrode disposed over the substrate;
a piezoelectric layer disposed over at least a portion of the first electrode; and
a second electrode disposed over at least a portion of the piezoelectric layer,
wherein a first gap is disposed between the piezoelectric layer and one of the first and second electrodes,
wherein the first gap comprises:
a first inner gap disposed in an active area of the bulk acoustic wave resonator, and having a first spacing distance between the piezoelectric layer and the one of the first and second electrodes; and
a first outer gap disposed outwardly of the active area and having a second spacing distance, different than the first spacing distance, between the piezoelectric layer and the one of the first and second electrodes,

wherein a second gap is disposed between the piezoelectric layer and the other of the first and second electrodes, and
wherein the second gap comprises:
a second inner gap disposed in the active area, and having a third spacing distance between the piezoelectric layer and the other of the first and second electrodes, and
a second outer gap disposed outwardly of the active area and having a fourth spacing distance, different than the third spacing distance, between the piezoelectric layer and the other of the first and second electrodes.

15. The bulk acoustic wave resonator of claim 14 , wherein the piezoelectric layer and the one of the first and second electrodes form a first capacitor portion having a first capacitance in the first inner gap, and

Assignees

• Samsung Electro Mech

Inventors

• Han Won
• Son Sang Uk
• Kim Tae Yoon
• Kim Jong Woon

Classifications

• H03H9/02118 Primary

  of lateral leakage between adjacent resonators · CPC title

• H03H9/173

  Air-gaps · CPC title

• H03H9/132

  characterized by a particular shape · CPC title

• H03H9/02015

  Characteristics of piezoelectric layers, e.g. cutting angles · CPC title

• H03H9/02086

  Means for compensation or elimination of undesirable effects · CPC title