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Gas sensor, gas measurement apparatus, fabrication method for gas sensor and hydrogen sulfide concentration measurement method
US11271161B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11271161-B2 |
| Application number | US-201816048849-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 30, 2018 |
| Priority date | Aug 22, 2017 |
| Publication date | Mar 8, 2022 |
| Grant date | Mar 8, 2022 |
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- Title
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Abstract
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A semiconductor material includes polythiophene, sulfonic acid, and copper ion. The copper ion is bonded to the sulfonic acid.
First claim
Opening claim text (preview).
What is claimed is: 1. A gas sensor, comprising: a detection body that is produced using a semiconductor material comprising polythiophene, sulfonic acid, and copper ion bonded to the sulfonic acid and that detects measurement target gas within gas. 2. The gas sensor according to claim 1 , wherein the copper ion includes monovalent copper ion and the monovalent copper ion is bonded to the sulfonic acid. 3. The gas sensor according to claim 1 , wherein the polythiophene includes poly 3,4-ethylene dioxythiophene and the sulfonic acid includes poly 4-styrene sulfonic acid. 4. The gas sensor according to claim 3 , wherein the semiconductor material is amorphous. 5. The gas sensor according to claim 1 , wherein copper(II) bromide is mixed in the semiconductor material and the semiconductor material is aqueous solution. 6. A fabrication method for the gas sensor according to claim 5 , comprising: producing a detection body by applying and drying the semiconductor material that is the aqueous solution. 7. The fabrication method according to claim 6 , wherein the gas sensor has a characteristic in which the gas sensor is likely to react to hydrogen sulfide but is less likely to react to any other materials. 8. The gas sensor according to claim 1 , wherein the gas sensor has a characteristic in which the gas sensor is likely to react to hydrogen sulfide but is less likely to react to any other materials. 9. A gas measurement apparatus, comprising: the gas sensor according to claim 1 , wherein, using the gas sensor, resistance variation of the detection body is observed to perform measurement of the measurement target gas. 10. The gas measurement apparatus according to claim 9 , wherein the gas measurement apparatus performs measurement of hydrogen sulfide. 11. A hydrogen sulfide concentration measurement method for measuring a concentration of hydrogen sulfide, comprising: performing conversion into a concentration of the hydrogen sulfide based on a resistance variation rate of the detection body monitored as a function of time after contacting with the measurement target gas by the gas measurement apparatus according to claim 10 .
Assignees
Inventors
Classifications
- G01N33/0044Primary
Sulphides, e.g. H2S · CPC title
Composition of the body, e.g. the composition of its sensitive layer · CPC title
- H01L51/0037Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US11271161B2 cover?
- A semiconductor material includes polythiophene, sulfonic acid, and copper ion. The copper ion is bonded to the sulfonic acid.
- Who is the assignee on this patent?
- Fujitsu Ltd
- What technology area does this patent fall under?
- Primary CPC classification G01N33/0044. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Mar 08 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).