Indium gallium nitride red light emitting diode and method of making thereof
US-2018114878-A1 · Apr 26, 2018 · US
US11271143B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11271143-B2 |
| Application number | US-202017038283-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 30, 2020 |
| Priority date | Jan 29, 2019 |
| Publication date | Mar 8, 2022 |
| Grant date | Mar 8, 2022 |
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The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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The invention claimed is: 1. Pixel arrangement comprising: a substrate; at least one subpixel comprising a pair of two adjacent μ-LEDs spaced apart by a first gap and arranged on said substrate, wherein each one of the two adjacent μ-LEDs comprises an active layer embedded in a material volume and is adapted to emit light into the first gap; and a converter material on said substrate filling the first gap, wherein each one of the two adjacent μ-LEDs comprises a reflective layer running along a long sidewall of that one of the two adjacent μ-LEDs down toward the substrate and facing away from the first gap, wherein light generated in the active layer of each one of the two adjacent μ-LEDs is directed back, by the reflective layer of that one of the two adjacent μ-LEDs, towards the converter material. 2. Pixel arrangement according to claim 1 , in which the two adjacent μ-LEDs comprise a shape of a polyhedron or a prism of coated material volumes and comprise the active layer at least along a side facing the first gap. 3. Pixel arrangement according to claim 1 , further comprising a common terminal layer in electrical contact with the active layer and extending below the first gap, wherein the converter material is isolated from the common terminal layer. 4. Pixel arrangement according to claim 1 , in which a contact layer on a side facing away from the first gap extends in a direction of an emission side and there contacts the material volume for supplying current to the active layer. 5. Pixel arrangement according to claim 1 , in which the converter material fills the first gap at least up to an upper side of the material volume. 6. Pixel arrangement according to claim 1 , in which a transparent cover layer covers the pair of sub-pixels and the first gap between them. 7. Pixel arrangement according to claim 1 , further comprising: two further subpixels, each comprising a second pair of two μ-LEDs adjacent and spaced apart by a second gap, the second pair of two μ-LEDs being adapted to emit second light into the second gap; and a second converter material, different from the converter material in the first gap, in the second gap. 8. Pixel arrangement according to claim 7 , in which at least one of a contact layer of a μ-LED of a corresponding subpixel of the at least one subpixel and the two further subpixels extending on a side facing away from a corresponding gap is opposite a contact layer of a μ-LED of another subpixel. 9. Pixel arrangement according to claim 7 , in which the three sub-pixels are arranged substantially parallel to each other; or one sub-pixel is arranged substantially perpendicular to two remaining sub-pixels. 10. Pixel arrangement according to claim 1 , further comprising: a photonic structure, which comprises periodic areas of different refractive index, arranged on at least the converter material. 11. Pixel arrangement according to claim 10 , in which the photonic structure comprises at least one of the following characteristics: the photonic structure is a two-dimensional crystal, or the photonic structure comprises a superlattice along at least one direction. 12. Pixel arrangement according to claim 1 , in which a portion of a common terminal layer extends between a corresponding active layer of each μ-LED and the converter material, respectively. 13. Pixel arrangement according to claim 1 , further comprising: at least a second pair of two adjacent μ-LEDs; and a plurality of contact elements, on a side facing away from an emission side of the active layer, which are connected to contact areas of a carrier, the carrier comprising at least one current driver circuit for each pair of two adjacent μ-LEDs. 14. Pixel arrangement according to claim 13 , further comprising: at least a second pair of two adjacent μ-LEDs; and a device configured to electronically each pair of two adjacent μ-LEDs. 15. Pixel arrangement according to claim 1 , further comprising: wherein the at least one subpixel comprises a first subpixel and a second subpixel; wherein the first subpixel comprising a comprises the first pair of two adjacent μ-LEDs spaced apart by the first gap; wherein the second subpixel is adjacent to the first subpixel and comprises a second pair of two adjacent μ-LEDs spaced apart by a second gap, wherein each μ-LED of the second pair comprises a second active layer adapted to emit a second light into the second gap; and a second converter material arranged inside the second gap; wherein a third gap between a μ-LED of the pair of two adjacent μ-LEDs and an adjacent μ-LED of the second pair of two adjacent μ-LEDs is free of converter material.
Package configurations · CPC title
with means for detecting the driver's gaze direction or eye points · CPC title
Display screens · CPC title
Wavelength conversion materials · CPC title
Reflecting means · CPC title
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