Conductive line for display device and display device including the same

Patent metadata

Field	Value
Publication number	US-11271067-B2
Application number	US-201916720230-A
Country	US
Kind code	B2
Filing date	Dec 19, 2019
Priority date	Jan 25, 2019
Publication date	Mar 8, 2022
Grant date	Mar 8, 2022

Abstract

A conductive line for a display device may include a first layer including aluminum (Al) or an aluminum alloy, a second layer disposed on the first layer, the second layer including titanium nitride (TiNx), and a third layer disposed on the second layer, the third layer including titanium (Ti) and having a multilayer structure including a plurality of stacked sub-layers.

First claim

What is claimed is:

1. A conductive line for a display device, comprising:
a first layer including aluminum (Al) or an aluminum alloy;
a second layer disposed on the first layer, the second layer including a refractory metal nitride; and
a third layer disposed on the second layer, the third layer including a refractory metal having a multilayer structure including a plurality of stacked sub-layers, the third layer having an interface disposed between adjacent sub-layers,
wherein the plurality of stacked sub-layers include the same refractory metal.

2. The conductive line of claim 1 , wherein the refractory metal nitride includes titanium nitride and the refractory metal includes titanium.

3. The conductive line of claim 2 , wherein each of the first layer and the second layer has a single-layer structure.

4. The conductive line of claim 2 , wherein the plurality of sub-layers include a same material.

5. The conductive line of claim 4 , wherein each of the plurality of stacked sub-layers includes titanium.

6. The conductive line of claim 2 , wherein thicknesses of the plurality of stacked sub-layers are equal.

7. The conductive line of claim 2 , wherein a thickness of the third layer is less than a thickness of the first layer.

8. The conductive line of claim 2 , wherein a thickness of the second layer is less than a thickness of the first layer and a thickness of the third layer.

9. The conductive line of claim 2 , wherein the third layer consists of two, three, or four sub-layers.

10. A display device, comprising:
a substrate;
a semiconductor layer disposed on the substrate;
a first conductive line disposed on the semiconductor layer; and
a second conductive line disposed on the first conductive line,
wherein the second conductive line includes:
a first layer including aluminum or an aluminum alloy;
a second layer disposed on the first layer, the second layer including a refractory metal nitride; and
a third layer disposed on the second layer, the third layer including a refractory metal and having a multilayer structure including a plurality of stacked sub-layers, the third layer having an interface disposed between adjacent sub-layers.

11. The display device of claim 10 , wherein the refractory metal nitride includes titanium nitride and the refractory metal includes titanium.

12. The display device of claim 11 , wherein the first conductive line includes:
a first layer including aluminum or an aluminum alloy;
a second layer disposed on the first layer, the second layer including titanium nitride; and
a third layer disposed on the second layer, the third layer including titanium and having a single-layer structure.

13. The display device of claim 12 , wherein a thickness of the third layer of the second conductive line is greater than or equal to a thickness of the third layer of the first conductive line.

14. The display device of claim 12 , wherein a thickness of each of the plurality of stacked sub-layers of the third layer of the second conductive line is less than a thickness of the third layer of the first conductive line.

15. The display device of claim 12 , wherein an average size of grains included in the third layer of the second conductive line is less than an average size of grains included in the third layer of the first conductive line.

16. The display device of claim 11 , further comprising a third conductive line disposed on the second conductive line,
wherein the third conductive line is in contact with the semiconductor layer via a first contact hole exposing a portion of the semiconductor layer and in contact with the second conductive line via a second contact hole exposing a portion of the second conductive line.

17. The display device of claim 16 , wherein a depth of the first contact hole is greater than a depth of the second contact hole.

18. The display device of claim 10 , further comprising:
a first electrode disposed on the second conductive line;
an emission layer disposed on the first electrode; and
a second electrode disposed on the emission layer.

19. A conductive line for a display device, comprising:
a first layer including an aluminum (Al) alloy;
a second layer disposed on the first layer, the second layer including titanium nitride (TiNx); and
a third layer disposed on the second layer, the third layer including titanium (Ti) which has a multilayer structure including a plurality of stacked sub-layers, the third layer having an interface between adjacent sub-layers.

20. A display device, comprising:
a substrate;
a switching transistor including a first gate electrode which includes aluminum or an aluminum alloy, a refractory metal nitride and a refractory metal sequentially disposed on the substrate;
a driving transistor including a second gate electrode which includes aluminum or an aluminum alloy, a refractory metal nitride and a refractory metal sequentially disposed on the substrate; and
a light emitting diode having an electrode connected to the driving transistor and disposed on the substrate,
wherein the refractory metal in the second gate electrode includes a plurality of stacked sub-layers, the plurality of stacked sub-layers having an interface disposed between adjacent sub-layers, and
wherein the plurality of stacked sub-layers include the same refractory metal.

21. The display device of claim 20 , wherein the refractory metal in the first gate electrode has no interface.

22. The display device of claim 21 , wherein the refractory metal nitride includes titanium nitride and the refractory metal includes titanium.

23. The display device of claim 22 , wherein each of the plurality of stacked sub-layers has columnar grains and the columnar grains have disconnected portions at the interface.

24. The display device of claim 23 , wherein the refractory metal in the driving transistor includes a titanium layer and a titanium nitride layer or a titanium oxide layer disposed on the titanium layer.

25. The display device of claim 23 , wherein the refractory metal in the driving transistor includes a plurality of titanium layers sequentially stacked with the interface between the adjacent sub-layers.

26. The display device of claim 25 , further comprising a capacitor connected between a source electrode and a gate electrode of the driving transistor, the capacitor including a first electrode having a same structure as the first gate electrode and a second electrode having a same structure as the second gate electrode.

27. The display device of claim 22 , wherein an average size of grains included in the refractory metal in the driving transistor is less than an average size of grains included in the refractory metal in the switching transistor.

Assignees

• Samsung Display Co Ltd

Inventors

• Yang Sukyoung
• Sohn Sangwoo
• Song Dokeun
• Lee Dongmin
• Shin Sangwon
• Shin Hyuneok
• Ko Kyeong Su
• Kim Sang Gab
• Lee Joongeol

Classifications

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D86/443 Primary

  adapted for preventing breakage, peeling or short circuiting · CPC title

• H01L27/3262

  Electricity · mapped topic

• H01L27/3276 Primary

  Electricity · mapped topic

• H01L27/3265

  Electricity · mapped topic