Precursors and flowable CVD methods for making low-k films to fill surface features

Patent metadata

Field	Value
Publication number	US-11270880-B2
Application number	US-201916580880-A
Country	US
Kind code	B2
Filing date	Sep 24, 2019
Priority date	Aug 30, 2016
Publication date	Mar 8, 2022
Grant date	Mar 8, 2022

Abstract

A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about −20° C. to about 400° C.; introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.

First claim

The invention claimed is:

1. A method for depositing a silicon-containing film, the method comprising:
placing a substrate comprising at least one surface feature into a reactor which is at a temperature of from about −20° C. to about 400° C.;
introducing into the reactor at least one silicon-containing compound having at least one acyloxy group, wherein the at least one silicon-containing compound is diacetoxydimethoxysilane; and
providing an in-situ plasma or remote plasma source comprising hydrogen and helium to the reactor to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a coating on the substrate and at least partially fills at least a portion of the at least one surface feature.

2. The method of claim 1 further comprising the step of subjecting the coating to a thermal treatment at one or more temperatures between about 100° C. to about 1000° C. to densify at least a portion of the coating and form a hardened layer.

3. The method of claim 2 further comprising the step of exposing the hardened layer to energy selected from the group consisting of a plasma, infrared light, chemical treatment, an electron beam, or UV light to form the final silicon-containing film.

4. The method of claim 3 wherein the above steps define one cycle for the method and the cycle can be repeated until the desired thickness of the silicon-containing film is obtained.

5. The method of claim 3 wherein the silicon containing film has a dielectric constant of <3.0 as determined by Capacitance-Voltage measurements, and a porosity of >10% as measured by Ellipsometric Porosimetry.

6. A silicon containing film obtained by the method of claim 1 having a dielectric constant of <3.0 as determined by Capacitance-Voltage measurements, and a porosity of >10 volume % as measured by Ellipsometric Porosimetry upon a substrate having at least one surface feature.

Assignees

• Versum Mat Us Llc

Inventors

• Li Jianheng
• Vrtis Raymond Nicholas
• Ridgeway Robert Gordon
• Xiao Manchao
• Lei Xinjian

Classifications

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6686

  the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title

• H10P14/6684

  the compound comprising silicon and oxygen · CPC title

• H10P14/6538

  by exposure to UV light · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title