Mems devices and processes
US-2020137501-A1 · Apr 30, 2020 · US
US11267697B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11267697-B2 |
| Application number | US-201816955159-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 20, 2018 |
| Priority date | Dec 22, 2017 |
| Publication date | Mar 8, 2022 |
| Grant date | Mar 8, 2022 |
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Official abstract text for this publication.
In an assembly between a MEMS and/or NEMS electromechanical component and a casing, the electromechanical component includes at least one suspended and movable structure which is provided with at least one fixing zone, on which a region for receiving the casing is fixed, the suspended structure being at least partially formed in a cover for protecting the component or in a layer which is different from the one in which a sensitive element of the component is formed.
Opening claim text (preview).
The invention claimed is: 1. A method for manufacturing a device comprising a MEMS or a NEMS electromechanical type component, the component being configured to be assembled to a support, in particular an integrated circuit support, the component being provided with at least one sensitive element formed in a first layer of a stack of layers, the electromechanical component including at least one movable suspended structure provided with one or more attachment zones on which one or more accommodating regions for accommodating the support is able to be attached, the suspended structure being formed at least partially in a second layer of said stack, the second layer being distinct from the first layer, the method comprising: forming the suspended structure comprising steps of: forming at least one buried cavity in a support layer, forming an access pit to the buried cavity, forming a protective layer coating the buried cavity, and etching the support layer so as to define the suspended structure, wherein the etching reaches the buried cavity so as to release the suspended structure. 2. The method according to claim 1 , wherein the suspended structure is defined at a rear face of the support layer, the method further comprising transferring at least one superficial layer at a front face of the support layer opposite to said rear face and structuring the superficial layer so as to form the sensitive element. 3. The method according to claim 1 , wherein the support layer is made of a semiconductor material, the protective layer being formed by oxidizing the semiconductor material of the support layer. 4. The method according to claim 1 , comprising forming the suspended structure to have at least one stop. 5. The method according to claim 1 , the support layer being a layer of a semiconductor on insulator type substrate provided with a semiconducting superficial layer lying on an insulating intermediate layer, said insulating intermediate layer lying on a semiconducting support layer. 6. The method according to claim 1 , wherein said component is one of an accelerometer, gyrometer, pressure sensor and resonator.
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