Secondary battery protection circuit, secondary battery protection apparatus and battery pack

Patent metadata

Field	Value
Publication number	US-11264792-B2
Application number	US-202016881298-A
Country	US
Kind code	B2
Filing date	May 22, 2020
Priority date	May 31, 2019
Publication date	Mar 1, 2022
Grant date	Mar 1, 2022

Abstract

A secondary battery protection circuit for protecting a secondary battery, including: a low-voltage detecting circuit configured to detect a voltage across the secondary battery that is lower than a second voltage for low voltage detection, the second voltage being set to be lower than a first voltage for overdischarge detection; and a switching circuit configured to cause a gate of a charge control NMOS transistor to be fixed at a potential at a high side power supply terminal, upon detecting, by the low-voltage detecting circuit, that the voltage across the secondary battery is lower than the second voltage for low voltage detection.

First claim

What is claimed is:

1. A secondary battery protection circuit for protecting a secondary battery, comprising:
a boosting circuit configured to generate a control voltage in response to boosting a voltage across a secondary battery;
a drive circuit configured to supply the control voltage to a gate of a charge control NMOS transistor and a gate of a discharge control NMOS transistor, the charge control NMOS transistor and the discharge control NMOS transistor being configured to be electrically inserted in a current path that is between a positive electrode of the secondary battery and a high side power supply terminal for each of a load and a charger;
an overdischarge detecting circuit configured to detect the voltage across the secondary battery that is lower than a predetermined first voltage for overdischarge detection;
a control circuit configured to operate the drive circuit such that the gate of the discharge control NMOS transistor becomes at low level, upon detecting, by the overdischarge detecting circuit, that the voltage across the secondary battery is lower than the first voltage for overdischarge detection;
a low-voltage detecting circuit configured to detect the voltage across the secondary battery that is lower than a second voltage for low voltage detection, the second voltage being set to be lower than the first voltage for overdischarge detection;
an interrupt circuit configured to interrupt a node through which the control voltage is supplied to the gate of the charge control NMOS transistor, such that the node becomes at high impedance, upon detecting, by the low-voltage detecting circuit, that the voltage across the secondary battery is lower than the second voltage for low voltage detection; and
a switching circuit configured to cause the gate of the charge control NMOS transistor to be fixed at a potential at the high side power supply terminal, upon detecting, by the low-voltage detecting circuit, that the voltage across the secondary battery is lower than the second voltage for low voltage detection.

2. The secondary battery protection circuit according to claim 1 , wherein the low-voltage detecting circuit is configured to stop the boosting circuit upon detecting that the voltage across the secondary battery is lower than the second voltage for low voltage detection.

3. The secondary battery protection circuit according to claim 1 , wherein the low-voltage detecting circuit includes a level shift circuit configured to adjust an output potential of the low-voltage detecting circuit to a potential at the high side power supply terminal, and
wherein the switching circuit includes:
a first NMOS transistor whose gate is controlled according to the output of the level shift circuit;
a plurality of first PMOS transistors in which respective gates are commonly electrically coupled to be controlled by the first NMOS transistor and in which respective sources are commonly electrically coupled; and
a current source electrically coupled between a common connection gate and a common connection source, the common connection gate being the commonly electrically coupled respective gates of the first PMOS transistors and the common connection source being commonly electrically coupled respective sources of the first PMOS transistors.

4. The secondary battery protection circuit according to claim 3 , wherein the level shift circuit includes a depletion NMOS transistor electrically coupled between an output node of the low-voltage detecting circuit and the high side power supply terminal.

5. The secondary battery protection circuit according to claim 1 , wherein the drive circuit includes a CMOS inverter that includes a second PMOS transistor whose source is electrically coupled to an output node of the boosting circuit configured to generate the control voltage and output the control voltage, and that includes a second NMOS transistor whose source is electrically coupled to a ground of the boosting circuit, and
wherein the interrupt circuit is configured to:
interrupt a path between the node being an output node of the CMOS inverter and the output node of the boosting circuit, such that the output node becomes at high impedance, in a state in which the voltage across the secondary battery is lower than the second voltage for low voltage detection and in which the control circuit is configured to output a low level signal to a gate of each of the second PMOS transistor and the second NMOS transistor, or
interrupt a path between the node being an output node of the CMOS inverter and the ground of the boosting circuit, such that the output node becomes at high impedance, in a state in which the voltage across the secondary battery is lower than the second voltage for low voltage detection and in which the control circuit is configured to output a high level signal to a gate of each of the second PMOS transistor and the second NMOS transistor.

6. The secondary battery protection circuit according to claim 1 , wherein the drive circuit includes a CMOS inverter that includes a second PMOS transistor whose source is electrically coupled to an output node of the boosting circuit configured to generate the control voltage and output the control voltage, and that includes a second NMOS transistor whose source is electrically coupled to a ground of the boosting circuit, and that includes a second NMOS transistor whose source is electrically coupled to the low electric potential part,
wherein, in a state in which the voltage across the secondary battery is lower than the second voltage for low voltage detection and in which the control circuit is configured to output a low level signal to a gate of each of the second PMOS transistor and the second NMOS transistor, the interrupt circuit is configured to interrupt a path between the node being an output node of the CMOS inverter and the output node of the boosting circuit, such that the output node becomes at high impedance, and
wherein the interrupt circuit includes a PMOS transistor between the output node of the CMOS inverter and the output node of the boosting circuit.

7. The secondary battery protection circuit according to claim 1 , wherein the low-voltage detecting circuit includes a MOS transistor, and
wherein the second voltage for low voltage detection is set based on a threshold voltage associated with the MOS transistor.

8. A secondary battery protection apparatus comprising:
the secondary battery protection circuit according to claim 1 ;
the charge control NMOS transistor electrically inserted in the current path that is between the positive electrode of the secondary battery and the high side power supply terminal for each of the load and the charger; and
the discharge control NMOS transistor electrically inserted in the current path.

9. A battery pack comprising:
a secondary battery including a positive electrode;
a charge control NMOS transistor electrically inserted in a current path that is between the positive electrode of the secondary battery and a high side power supply terminal for each of a load and a charger;
a discharge control NMOS transistor electrically inserted in the current path;
a boosting circuit configured to generate a control voltage in response to boosting a voltage across the secondary battery;
a drive circuit configured to supply the control voltage to a gate of the charge control NMOS transistor and a gate of the discharge control NMOS transistor;
an overdischarge detecting circuit configured to detect the voltage across the secondary battery that is lower than a predetermined first voltage for overdischarge detection;
a control circuit configured to operate the drive circuit such that the gate of the discharge control NMOS tr

Assignees

• Takeda Takashi
• Mitsumi Electric Co Ltd

Inventors

• Takeda Takashi

Classifications

• H02J7/663 Primary

  using battery or load disconnect circuits (H02J9/002 takes precedence) · CPC title

• H02J7/63 Primary

  against overdischarge · CPC title

• H02J7/62

  against overcurrent · CPC title

• H02J7/61

  against overcharge · CPC title

• H02J7/685

  using connection detecting circuits (H02J7/68 takes precedence) · CPC title