SPAD image sensor and associated fabricating method

Patent metadata

Field	Value
Publication number	US-11264525-B2
Application number	US-202016880323-A
Country	US
Kind code	B2
Filing date	May 21, 2020
Priority date	Oct 31, 2017
Publication date	Mar 1, 2022
Grant date	Mar 1, 2022

Abstract

A single photon avalanche diode (SPAT) image sensor is disclosed. The SPAT) image sensor include: a substrate of a first conductivity type, the substrate having a front surface and a back surface; a deep trench isolation (DTI) extending from the front surface toward the back surface of the substrate, the DTI having a first surface and a second surface opposite to the first surface, the first surface being level with the front surface of the substrate; an epitaxial layer of a second conductivity type opposite to the first conductivity type, the epitaxial layer surrounding sidewalls and the second surface of the DTI; and an implant region of the first conductivity type extending from the front surface to the back surface of the substrate. An associated method for fabricating the SPAD image sensor is also disclosed.

First claim

What is claimed is:

1. A single photon avalanche diode (SPAD) image sensor, comprising:
a substrate of a first conductivity type, the substrate having a front surface and a back surface;
a deep trench isolation (DTI) extending from the front surface toward the back surface of the substrate, the DTI having a first surface and a second surface opposite to the first surface, the first surface being level with the front surface of the substrate, the DTI being a square ring from a top view;
an epitaxial layer of a second conductivity type opposite to the first conductivity type, the epitaxial layer surrounding inner and outer sidewalls and the second surface of the DTI;
a heavily doped region substantially formed between inner sidewalls of the square ring of the DTI, wherein the heavily doped region abuts the epitaxial layer and the front surface of the substrate, and a dopant concentration of the heavily doped region is higher than a dopant concentration of the epitaxial layer; and
an implant region of the first conductivity type extending from the front surface to the back surface of the substrate and reaching the back surface of the substrate.

2. The SPAD image sensor of claim 1 , wherein the substrate includes a first layer at the front surface and a second layer at the back surface, and a dopant concentration of the first conductivity type of the first layer is higher than a dopant concentration of the first conductivity type of the second layer.

3. The SPAD image sensor of claim 2 , wherein the DTI extends from the first layer to the second layer, and the DTI stops before reaching the back surface.

4. The SPAD image sensor of claim 3 , wherein the epitaxial layer includes a first portion and a second portion in the first layer and the second layer respectively, and a dopant concentration of the second conductivity type of the first portion is substantially uniform, and a dopant concentration of the second conductivity type of the second portion decreases from an interface between the first portion and the second portion toward the second surface of the DTI.

5. The SPAD image sensor of claim 1 , wherein the heavily doped region is of the second conductivity type.

6. The SPAD image sensor of claim 1 , further comprising a heavily doped region of the first conductivity type in the implant region abutting the front surface of the substrate.

7. The SPAD image sensor of claim 5 , wherein the substrate includes a first layer at the front surface, a third layer at the back surface and a second layer between the first and third layer, and a dopant concentration of the first conductivity type of the second layer is higher than a dopant concentration of the first conductivity type of the first layer and the third layer.

8. The SPAD image sensor of claim 7 , wherein the heavily doped region is in the first layer.

9. The SPAD image sensor of claim 1 , further comprising a DTI in the implant region.

10. A single photon avalanche diode (SPAD) image sensor, comprising:
a first epitaxial layer of a first conductivity type, the first epitaxial layer having a front surface and a back surface;
a second epitaxial layer of the first conductivity type, the second epitaxial layer having a front surface and a back surface, the second epitaxial layer being formed over the first epitaxial layer with the front surface of the second epitaxial layer facing the back surface of the first epitaxial layer, a dopant concentration of the first conductivity type of the first epitaxial layer is higher than a dopant concentration of the first conductivity type of the second epitaxial layer;
a deep trench isolation (DTI) extending from the front surface of the first epitaxial layer toward the back surface of the second epitaxial layer, the DTI having a first surface and a second surface opposite to the first surface, the first surface being level with the front surface of the first epitaxial layer, the DTI being a square ring from a top view;
an epitaxial layer of a second conductivity type opposite to the first conductivity type, the epitaxial layer surrounding sidewalls and the second surface of the DTI; and
a heavily doped region substantially formed between inner sidewalls of the square ring of the DTI, wherein the heavily doped region abuts the epitaxial layer and the front surface of the first epitaxial layer, and a dopant concentration of the heavily doped region is higher than a dopant concentration of the epitaxial layer.

11. The SPAD image sensor of claim 10 , further comprising an implant region of the first conductivity type extending from the front surface of the first epitaxial layer to the back surface of the second epitaxial layer.

12. The SPAD image sensor of claim 11 , wherein a dopant concentration of the first conductivity type of the implant region is greater or equal to the dopant concentration of the first conductivity type of the first epitaxial layer.

13. The SPAD image sensor of claim 10 , wherein the DTI stops before reaching the back surface of the second epitaxial layer.

14. The SPAD image sensor of claim 10 , wherein the epitaxial layer includes a first portion and a second portion in the first layer and the second layer respectively, and a dopant concentration of the second conductivity type of the first portion is substantially uniform, and a dopant concentration of the second conductivity type of the second portion gradually decreases from an interface between the first portion and the second portion toward the second surface of the DTI.

15. The SPAD image sensor of claim 10 , further comprising a first inter-layer dielectric (ILD) layer on the front surface of the first epitaxial layer, the first ILD layer including a plurality of metal layers.

16. The SPAD image sensor of claim 15 , further comprising a chip, the chip including a plurality of active devices and a second ILD layer bonded to the first ILD layer.

17. The SPAD image sensor of claim 15 , further comprising a carrier bonded to the first ILD layer.

18. The SPAD image sensor of claim 10 , further comprising a lens at the back surface of the second epitaxial layer.

19. The SPAD image sensor of claim 18 , wherein a center of the lens overlaps a center of the DTI from a top view.

20. A single photon avalanche diode (SPAD) image sensor, comprising:
a substrate of a first conductivity type, the substrate having a front surface and a back surface, the back surface being for receiving incident light;
an inter-layer dielectric (ILD) layer on the front surface of the substrate, the ILD layer including a plurality of metal layers;
a lens at the back surface of the substrate;
a deep trench isolation (DTI) extending from the front surface toward the back surface of the substrate and without reaching the back surface, the DTI having a first surface and a second surface opposite to the first surface, the first surface being level with the front surface of the substrate, the DTI being a square ring from a top view, and a center of the lens overlapping a center of the DTI from a top view; and
an epitaxial layer of a second conductivity type opposite to the first conductivity type, the epitaxial layer surrounding inner and outer sidewalls and the second surface of the DTI, wherein the epitaxial layer includes a first portion and a second portion, and a dopant concentration of the second conductivity type of the first portion is substantially uniform, and a dopant concentration of the second conductivity type of the second portion decreases from an interface between the first p

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Wang Tzu-Jui
• Sze Jhy-Jyi
• Yamashita Yuichiro
• Huang Kuo-Chin

Classifications

• H10D8/024

  of Avalanche diodes · CPC title

• H10D84/85

  Complementary IGFETs, e.g. CMOS · CPC title

• H10D84/0165

  the components including complementary IGFETs, e.g. CMOS devices · CPC title

• H10F30/225 Primary

  the potential barrier working in avalanche mode, e.g. avalanche photodiodes · CPC title

• H10F39/011

  Manufacture or treatment of image sensors covered by group H10F39/12 · CPC title