Thin-film transistor array substrate with connection node and display device including the same

Patent metadata

Field	Value
Publication number	US-11264412-B2
Application number	US-201815946697-A
Country	US
Kind code	B2
Filing date	Apr 5, 2018
Priority date	Aug 24, 2012
Publication date	Mar 1, 2022
Grant date	Mar 1, 2022

Abstract

A thin-film transistor (TFT) array substrate including: a first conductive layer selected from an active layer, a gate electrode, a source electrode, and a drain electrode of a TFT; a second conductive layer in a layer different from the first conductive layer; and a connection node coupling the first conductive layer to the second conductive layer. Here, the TFT array has a node contact hole formed by: a first contact hole in the first conductive layer; and a second contact hole in the second conductive layer, the second contact hole being integral with the first contact hole and not being separated from the first contact hole by an insulating layer, and at least a portion of the connection node is in the node contact hole.

First claim

What is claimed is:

1. A thin-film transistor (TFT) array substrate comprising:
a first scan line;
a second scan line;
a data line;
an initialization power line;
a first TFT configured to drive a pixel;
a second TFT disposed between the data line and the first TFT and comprising a gate electrode connected to the first scan line, wherein the second TFT is configured to transfer a data signal provided from the data line to the pixel when a first scan signal is provided from the first scan line;
a third TFT disposed between the initialization power line and the first TFT and comprising a gate electrode connected to the second scan line, wherein the third TFT is configured to transfer an initialization power provided from the initialization power line to the pixel when a second scan signal is provided from the second scan line, and the initialization power line is connected to one of the source electrode and the drain electrode of the third TFT;
an integrated contact hole disposed at the one of the source electrode and the drain electrode of the third TFT;
a connection node extending through the integrated contact hole to contact the initialization power line, and extending through the integrated contact hole to contact the one of the source electrode and the drain electrode of the third TFT,
the connection node being in direct contact with the initialization power line over a first substantially flat surface that is substantially parallel to the TFT array substrate, and
the connection node being in direct contact with the one of the source electrode and the drain electrode of the third TFT over a second substantially flat surface that is substantially parallel to the TFT array substrate,
wherein the initialization power line overlaps the one of the source electrode and the drain electrode of the third TFT and does not overlap the gate electrode of the third TFT.

2. The TFT array substrate of claim 1 , wherein the initialization power line and the one of the source electrode and the drain electrode of the third TFT overlaps at an overlapping region (OL) between the first substantially flat surface and the second substantially flat surface.

3. The TFT array substrate of claim 2 , further comprising a gate insulating layer between the initialization power line and the one of the source electrode and the drain electrode of the third TFT wherein the gate insulating layer and initialization power line overlap at the overlapping region.

4. The TFT array substrate of claim 2 , further comprising an interlayer insulating layer between the initialization power line and the connection node, and wherein the interlayer insulating layer is not located at the overlapping region.

5. The TFT array substrate of claim 2 , further comprising a capacitor connected to the third TFT, and wherein the third TFT further comprises an active layer, and wherein a first electrode of the capacitor is in the same layer as the active layer.

6. The TFT array substrate of claim 5 , wherein the first electrode of the capacitor comprises a same material as the active layer.

Assignees

• Samsung Display Co Ltd

Inventors

• Lee Won-Se

Classifications

• H10K59/1213

  the pixel elements being TFTs · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D86/441 Primary

  Interconnections, e.g. scanning lines · CPC title

• H10D86/481

  integrated with passive devices, e.g. auxiliary capacitors · CPC title

• H10D86/451

  characterised by the compositions or shapes of the interlayer dielectrics · CPC title