Electromagnetically-driven ferromagnetic actuator device

Patent metadata

Field	Value
Publication number	US-11264158-B2
Application number	US-201816184024-A
Country	US
Kind code	B2
Filing date	Nov 8, 2018
Priority date	Nov 8, 2018
Publication date	Mar 1, 2022
Grant date	Mar 1, 2022

Abstract

A ferromagnetic actuator is disposed between first and second semiconductor devices that include first and second inductors. Each inductor is disposed on top of a multilevel wiring structure. Current flows through the first inductor to generate a first magnetic field that attracts the ferromagnetic actuator towards the first inductor causing the ferromagnetic actuator to transition from a first state to a second state. In the second state, a portion of the ferromagnetic actuator is disposed closer to the first inductor than it is in the first state. Current flows through the second inductor to generate a second magnetic field that attracts the ferromagnetic actuator towards the second inductor causing the ferromagnetic actuator to transition from the first or second state to a third state. In the third state, a portion of the ferromagnetic actuator is disposed closer to the first inductor than it is in the first state.

First claim

What is claimed is:

1. An apparatus comprising:
a semiconductor device comprising:
a semiconductor substrate;
a multilevel wiring network disposed on the semiconductor substrate; and
an inductor comprising a ferromagnetic core, the inductor integrated on top of the multilevel wiring network;
an insulator layer disposed on the semiconductor substrate, the multilevel wiring network and the inductor formed in the insulator layer; and
a contact structure disposed on top of the insulator layer; and

a ferromagnetic actuator magnetically coupled to the inductor, the ferromagnetic actuator having a first end mechanically attached to the contact structure,
wherein:
the inductor generates a magnetic field that causes the ferromagnetic actuator to transition from a first state to a second state,
the contact structure electrically contacts the ferromagnetic actuator, and
when the ferromagnetic actuator is in the first state, a gap is formed between a top surface of the insulator layer and a second end of the ferromagnetic actuator, the gap defined by the contact structure,
when the ferromagnetic actuator is in the second state, the second end of the ferromagnetic actuator is located closer to the inductor than in the first state.

2. The apparatus of claim 1 , wherein the ferromagnetic actuator comprises a magnetic cantilever.

3. The apparatus of claim 1 , wherein:
the magnetic cantilever is elongated along an axis,
in the first state, the axis is parallel to a principal plane of the ferromagnetic core, and
in the second state, the axis is angled with respect to the principal plane.

4. The apparatus of claim 1 , further comprising an artificial appendage mechanically coupled to a second end of the ferromagnetic actuator.

5. The apparatus of claim 4 , wherein the artificial appendage comprises a wing.

6. The apparatus of claim 1 , further comprising a capacitor electrically disposed in parallel with the inductor to form an LC circuit.

7. The apparatus of claim 6 , further comprising a semiconductor switch that is electrically coupled to the LC circuit.

8. The apparatus of claim 7 , wherein the semiconductor switch has a first state in which electrical current flows into the LC circuit and a second state in which no electrical current flows into the LC circuit.

9. The apparatus of claim 8 , wherein when the semiconductor switch is in the first state, an alternating current flows through the LC circuit, the alternating current causing the inductor to generate the magnetic field.

10. The apparatus of claim 1 , wherein the contact structure is configured to apply a voltage between the ferromagnetic actuator and the inductor to create an electrostatic force therebetween, the electrostatic force controlling a movement of the ferromagnetic actuator.

Assignees

• Ferric Inc

Inventors

• Sturcken Noah
• Davies Ryan
• Lekas Michael

Classifications

• H10W20/497

  Inductive arrangements or effects of, or between, wiring layers · CPC title

• H10W20/496

  Capacitor integral with wiring layers · CPC title

• B64U10/40

  Ornithopters · CPC title

• H10D84/85

  Complementary IGFETs, e.g. CMOS · CPC title

• H10D84/40

  characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs · CPC title