Treatment liquid for manufacturing semiconductor and pattern forming method

Patent metadata

Field	Value
Publication number	US-11256173-B2
Application number	US-201816143496-A
Country	US
Kind code	B2
Filing date	Sep 27, 2018
Priority date	Mar 31, 2016
Publication date	Feb 22, 2022
Grant date	Feb 22, 2022

Abstract

An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor and a pattern forming method, in which the formation of particles including metal atoms can be reduced and an excellent pattern can be formed.A treatment liquid for manufacturing a semiconductor according to an embodiment of the present invention includes: a quaternary ammonium compound represented by Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; and water. The treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn, and a total mass of the metal atoms is 1 mass ppt to 1 mass ppm with respect to the sum of a total mass of the additive and the total mass of the metal atoms.

First claim

What is claimed is:

1. A treatment liquid for manufacturing a semiconductor comprising:
a quaternary ammonium compound represented by the following Formula (N);
at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; and
water,
wherein the treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn, and
a ratio T 1 of a total mass of the metal atoms to the sum of a total mass of the additive and the total mass of the metal atoms as defined by the following formula is in a range from 1 ppt to 1 ppm,
T 1 =[total mass of the metal atoms]/([total mass of the additive]+[total mass of the metal atoms]),

in Formula (N), R N1 to R N4 each independently represent an alkyl group, a phenyl group, a benzyl group, or a cyclohexyl group, and the alkyl group, the phenyl group, the benzyl group, or the cyclohexyl group may have a substituent.

2. The treatment liquid for manufacturing a semiconductor according to claim 1 ,
wherein the ratio T 1 is in a range from 1 ppb to 1 ppm.

3. The treatment liquid for manufacturing a semiconductor according to claim 1 ,
wherein a ratio T 2 of a total mass of particulate metal of the metal atoms measured by a SP-ICP-MS method to the sum of the total mass of the additive and the total mass of the particulate metal as defined by the following formula is in a range from 0.1 ppt to 0.1 ppm,
T 2 =[total mass of the particulate metal]/([total mass of the additive]+[total mass of the particulate metal])

.

4. The treatment liquid for manufacturing a semiconductor according to claim 1 ,
wherein a ratio T 2 of a total mass of particulate metal of the metal atoms measured by a SP-ICP-MS method to the sum of the total mass of the additive and the total mass of the particulate metal as defined by the following formula is in a range from 0.1 ppt to 1 ppb,
T 2 =[total mass of the particulate metal]/([total mass of the additive]+[total mass of the particulate metal])

.

5. The treatment liquid for manufacturing a semiconductor according to claim 1 ,
wherein a content of the quaternary ammonium compound is 25 mass % or lower and a content of the additive is 1 mass % or lower with respect to the treatment liquid for manufacturing a semiconductor.

6. The treatment liquid for manufacturing a semiconductor according to claim 1 ,
wherein a content of each of the one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn is 1 mass ppq to 1000 mass ppt with respect to the treatment liquid for manufacturing a semiconductor.

7. The treatment liquid for manufacturing a semiconductor according to claim 1 ,
wherein a content of each of the one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, and Ca is 1 mass ppq to 1000 mass ppt with respect to the treatment liquid for manufacturing a semiconductor.

8. The treatment liquid for manufacturing a semiconductor according to claim 1 ,
wherein the treatment liquid for manufacturing a semiconductor comprises at least the nonionic surfactant as the additive and further comprises a peroxide, and
a content of the peroxide is 1 mass ppq to 1000 mass ppt with respect to the treatment liquid for manufacturing a semiconductor.

9. The treatment liquid for manufacturing a semiconductor according to claim 1 ,
wherein the treatment liquid for manufacturing a semiconductor comprises at least the nonionic surfactant as the additive and further comprises an ester compound, and
a content of the ester compound is 1 mass ppq to 1000 mass ppt with respect to the treatment liquid for manufacturing a semiconductor.

10. The treatment liquid for manufacturing a semiconductor according to claim 1 ,
wherein the treatment liquid for manufacturing a semiconductor comprises at least the nonionic surfactant as the additive and further comprises an amine compound, and
a content of the amine compound is 1 mass ppq to 1000 mass ppt with respect to the treatment liquid for manufacturing a semiconductor.

11. The treatment liquid for manufacturing a semiconductor according to claim 1 ,
wherein the treatment liquid for manufacturing a semiconductor comprises at least the nonionic surfactant as the additive, and
an HLB of the nonionic surfactant is 8 or higher.

12. The treatment liquid for manufacturing a semiconductor according to claim 1 ,
wherein the treatment liquid for manufacturing a semiconductor comprises at least the nonionic surfactant as the additive, and
the treatment liquid for manufacturing a semiconductor comprises at least a compound represented by the following Formula (A1) as the nonionic surfactant,

in Formula (A 1),
R a1 , R a2 , R a3 and R a4 each independently represent an alkyl group, and
L a1 and L a2 each independently represent a single bond or a divalent linking group.

13. The treatment liquid for manufacturing a semiconductor according to claim 1 ,
wherein the treatment liquid for manufacturing a semiconductor comprises at least the anionic surfactant as the additive and further comprises an inorganic salt, and
a content of the inorganic salt is 1 mass ppq to 1000 mass ppt with respect to the treatment liquid for manufacturing a semiconductor.

14. The treatment liquid for manufacturing a semiconductor according to claim 1 ,
wherein the treatment liquid for manufacturing a semiconductor comprises at least the cationic surfactant as the additive and further comprises an inorganic salt, and
a content of the inorganic salt is 1 mass ppq to 1000 mass ppt with respect to the treatment liquid for manufacturing a semiconductor.

15. The treatment liquid for manufacturing a semiconductor according to claim 1 ,
wherein the treatment liquid for manufacturing a semiconductor comprises at least a chelating agent represented by the following Formula (K1) or (K2) as the additive,
a portion of the chelating agent forms a chelate complex with the one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn, and
a content of the chelate complex is 1 mass ppq to 1000 mass ppt with respect to the treatment liquid for manufacturing a semiconductor,

in Formula (K1),
R K1 and R K2 each independently represent a single bond or an alkylene group,
R K3 represents a divalent organic group,
X 1 represents a CH group or a nitrogen atom,
Y K1 and Y K2 each independently represent a metal-adsorbing group, and
A 1 represents a hydrogen atom or a hydrophilic group, and
in Formula (K2),
R K4 , R K5 , R K6 , and R K7 each independently represent a single bond or an alkylene group,
R K8 represents a trivalent organic group,
X 2 and X 3 each independently represent a CH group or a nitrogen atom,
Y K3 , Y K4 , Y K5 , and Y K5 each independently represent a metal-adsorbing group, and
A 2 represents a hydrogen atom or a hydrophilic group.

16. The treat

Assignees

• Fujifilm Corp

Inventors

• Kamimura Tetsuya
• Shimizu Tetsuya
• Murayama Satoru

Classifications

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• G03F7/70925

  Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning · CPC title

• G03F7/425

  containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen · CPC title

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title