Electro-refractive modulation in photonic structures

Patent metadata

Field	Value
Publication number	US-11256112-B2
Application number	US-201916282013-A
Country	US
Kind code	B2
Filing date	Feb 21, 2019
Priority date	Feb 21, 2018
Publication date	Feb 22, 2022
Grant date	Feb 22, 2022

Abstract

Methods, systems, and devices are described for electro-optic tuning. An example device may comprise a first layer comprising a transition metal di-chalcogenide material, a second layer comprising a conductive material, and a third layer comprising a dielectric material. The third layer may be disposed at least partially between the first layer and the second layer. An electrical potential difference applied between the first layer and the second layer may cause a tunable refractive index change in the first layer.

First claim

What is claimed:

1. A device configured for phase modulation, the device comprising:
a first layer comprising a monolayer transition metal di-chalcogenide material;
a second layer comprising a conductive material;
a third layer comprising a dielectric material and disposed at least partially between the first layer and the second layer, wherein an electrical potential difference applied between the first layer and the second layer causes a tunable refractive index change in the first layer; and
a waveguide disposed in a substrate such that the waveguide is separated from the first layer, wherein changes in the refractive index of the first layer cause phase modulation in a near-infrared range of light in the waveguide.

2. The device of claim 1 , wherein the first layer is part of a component of one or more of an optical network, a phased array, or an optical delay line.

3. The device of claim 1 , wherein the first layer, the second layer, and the third layer are disposed in one or more of a capacitor configuration or a parallel plate capacitor configuration.

4. The device of claim 1 , wherein the transition metal di-chalcogenide material comprises one or more of tungsten, molybdenum, sulfur, or selenium.

5. The device of claim 1 , wherein the transition metal di-chalcogenide material comprises one or more of WS 2 , WSe 2 , MoS 2 , or MoSe 2.

6. The device of claim 1 , wherein the third layer comprises hafnium oxide.

7. The device of claim 1 , wherein the conductive material comprises indium tin oxide.

8. The device of claim 1 , wherein the refractive index change is one or more of (i) greater than about 10 percent, (ii) in a range of about 5 percent to about 15 percent, or (iii) in a range of about 10 percent to about 15 percent.

9. The device of claim 1 , wherein the waveguide is separated by from the first layer by an additional layer disposed in between the substrate the first layer.

10. The device of claim 1 , wherein the device is engineered to optimize modal overlap with a photonic mode.

11. The device of claim 1 , wherein the substrate is planarized.

12. The device of claim 1 , wherein optical absorption of the device during phase modulation is minimized to less than 0.012 dB/cm/V.

13. A method comprising:
receiving a signal; and
causing, based on the signal, phase modulation in the near-infrared range of light in a waveguide based on modifying an electrical potential difference between a first layer and a second layer to cause a change in a refractive index in the first layer, wherein the first layer comprises a monolayer transition metal di-chalcogenide material and the second layer comprises a conductive material, and wherein a third layer comprising a dielectric material is disposed at least partially between the first layer and the second layer, and wherein the waveguide is disposed in a substrate such that the waveguide is separated from the first layer.

14. The method of claim 13 , wherein the first layer is part of a component of one or more of an optical network, a phased array, or an optical delay line.

15. The method of claim 13 , wherein the first layer, the second layer, and the third layer are disposed in one or more of a capacitor configuration or a parallel plate capacitor configuration.

16. The method of claim 13 , wherein the transition metal di-chalcogenide material comprises one or more of WS 2 , WSe 2 , MoS 2 , or MoSe 2.

17. The method of claim 13 , wherein the change in the refractive index is one or more of (i) greater than about 10 percent, (ii) in a range of about 5 percent to about 15 percent, or (iii) in a range of about 10 percent to about 15 percent.

18. An electro-optical device, comprising:
a component comprising a first layer and a second layer, wherein the first layer comprises a monolayer transition metal di-chalcogenide material;
a waveguide disposed in a substrate such that the waveguide is separated from the first layer; and
a logic unit configured to cause phase modulation in the near-infrared range of light in the waveguide based on modifying an electrical potential difference between the first layer and the second layer to change a refractive index in one or more of the first layer or the second layer.

Assignees

• Univ Columbia

Inventors

• Lipson Michal
• Hone James
• Yu Nanfang
• Datta Ipshita
• Chae Sanghoon
• Bhatt Gaurang R
• Basov Dmitri N

Classifications

• G02F2203/50

  Phase-only modulation · CPC title

• G02F1/0102 Primary

  Constructional details, not otherwise provided for in this subclass · CPC title

• G02F2203/11

  involving infrared radiation · CPC title