Temperature sensor, array substrate and display device

Patent metadata

Field	Value
Publication number	US-11255732-B2
Application number	US-201816338361-A
Country	US
Kind code	B2
Filing date	Sep 4, 2018
Priority date	Oct 13, 2017
Publication date	Feb 22, 2022
Grant date	Feb 22, 2022

Abstract

Provided are a temperature sensor, an array substrate, and a display device. In the temperature sensor, a low-pass filter is disposed between a ring oscillator and a comparator, so that a square-wave signal output from the ring oscillator passes through the low-pass filter and a high-frequency component in the square-wave signal output from the ring oscillator is directly filtered out by the low-pass filter, thereby improving a signal-to-noise ratio of the ring oscillator and a test accuracy of the temperature sensor.

First claim

What is claimed is:

1. A temperature sensor, comprising: a ring oscillator, a comparator, a low-pass filter disposed between the ring oscillator and the comparator, and a signal converter, wherein
the ring oscillator is configured to output a square-wave signal;
the low-pass filter is configured to filter out a high-frequency component in the square-wave signal output from the ring oscillator and output the filtered square-wave signal to the comparator;
the comparator is configured to compare a filtered square-wave signal input to the comparator with a reference signal, and output a comparison square-wave signal; and
the signal converter is coupled to the comparator and configured to convert the comparison square-wave signal output from the comparator into a temperature value,
the ring oscillator comprises n stages, wherein n is an odd number greater than or equal to 5,
each stage comprises a first oscillating transistor and a second oscillating transistor,
at each stage of the ring oscillator, a gate electrode and a source electrode of the second oscillating transistor are coupled to a terminal supplying a high-level signal, and a drain electrode of the second oscillating transistor is coupled to a source electrode of the first oscillating transistor;
a gate electrode of the first oscillating transistor at a first stage of the ring oscillator is coupled to a first input terminal of the comparator, a gate electrode of the first oscillating transistor at each of remaining stages of the ring oscillator of the n stages of the ring oscillator other than the first stage of the ring oscillator is coupled to a source electrode of the first oscillating transistor at an immediately previous adjacent stage of the ring oscillator and a drain electrode of the second oscillating transistor at the immediately previous adjacent stage of the ring oscillator, and a drain electrode of the first oscillating transistor at each stage of the ring oscillator is coupled to a terminal supplying a low-level signal; and
a source electrode of the first oscillating transistor at a n th stage of the ring oscillator and a drain electrode of the second oscillating transistor at the n th stage of the ring oscillator are coupled to an input terminal of the low-pass filter.

2. The temperature sensor according to claim 1 , wherein
the low-pass filter comprises a capacitor;
a first end of the capacitor is coupled to an output terminal of the ring oscillator and a first input terminal of the comparator; and
a second end of the capacitor is grounded.

3. The temperature sensor according to claim 1 , wherein
the low-pass filter comprises a capacitor and a transistor;
a first end of the capacitor is coupled to a drain electrode of the transistor and a first input terminal of the comparator, and a second end of the capacitor is grounded; and
a gate electrode of the transistor is coupled to a terminal supplying a high-level signal, and a source electrode of the transistor is coupled to an output terminal of the ring oscillator.

4. The temperature sensor according to claim 1 , wherein
the low-pass filter comprises a capacitor and a transistor;
a first end of the capacitor is coupled to a drain electrode of the transistor and a first input terminal of the comparator, and a second end of the capacitor is grounded; and
a gate electrode of the transistor is coupled to a terminal supplying a nominal voltage, and a source electrode of the transistor is coupled to an output terminal of the ring oscillator.

5. The temperature sensor according to claim 1 , wherein
the low-pass filter comprises a capacitor and a resistor;
a first end of the capacitor is coupled to a second end of the resistor and a first input terminal of the comparator, and a second end of the capacitor is grounded; and
a first end of the resistor is coupled to an output terminal of the ring oscillator.

6. The temperature sensor according to claim 1 , wherein
the low-pass filter comprises a capacitor;
a first end of the capacitor is coupled to the source electrode of the first oscillating transistor at the n th stage of ring oscillator, the drain electrode of the second oscillating transistor at the n th stage of ring oscillator and the first input terminal of the comparator; and
a second end of the capacitor is grounded.

7. The temperature sensor according to claim 1 , wherein
the low-pass filter comprises a capacitor and a transistor;
a first end of the capacitor is coupled to a drain electrode of the transistor and the first input terminal of the comparator; and a second end of the capacitor is grounded; and
a gate electrode of the transistor is coupled to a terminal supplying a high-level signal, and a source electrode of the transistor is coupled to the source electrode of the first oscillating transistor at the n th stage of ring oscillator and the drain electrode of the second oscillating transistor at the n th stage of ring oscillator.

8. The temperature sensor according to claim 1 , wherein
the low-pass filter comprises a capacitor and a transistor;
a first end of the capacitor is coupled to a drain electrode of the transistor and the first input terminal of the comparator, and a second end of the capacitor is grounded; and
a gate electrode of the transistor is coupled to a terminal supplying a nominal voltage, and a source electrode of the transistor is coupled to the source electrode of the first oscillating transistor at the n th stage of ring oscillator and the drain electrode of the second oscillating transistor at the n th stage of ring oscillator.

9. The temperature sensor according to claim 1 , wherein
the low-pass filter comprises a capacitor and a resistor;
a first end of the capacitor is coupled to a second end of the resistor and the first input terminal of the comparator, and a second end of the capacitor is grounded; and
a first end of the resistor is coupled to the source electrode of the first oscillating transistor at the n th stage of ring oscillator and the drain electrode of the second oscillating transistor at the n th stage of ring oscillator.

10. The temperature sensor according to claim 1 , further comprising an oscillation starter circuit having a first oscillation starting transistor and a second first oscillation starting transistor, wherein
a gate electrode of the first oscillation starting transistor is coupled to a first input terminal of the comparator, a source electrode of the first oscillation starting transistor is coupled to a terminal supplying a high-level signal, and a drain electrode of the first oscillation starting transistor is coupled to a gate electrode of the second oscillating transistor at the first stage of the ring oscillator and a source electrode of the second oscillation starting transistor; and
a drain electrode of the second oscillation starting transistor is coupled to a terminal supplying a low-level signal, and a gate electrode of the second oscillation starting transistor is coupled to a terminal supplying a high-level signal.

11. The temperature sensor according to claim 1 , wherein the signal converter comprises:
a buffer coupled to the comparator and configured to convert the comparison square-wave signal output from the comparator into an identifiable voltage signal; and
a digital signal processor coupled to the buffer and configured to process the identifiable voltage signal output from the buffer and output the temperature value.

12. An array substrate comprising the temperature sensor according to claim 1 , wherein the array substrate comprises a display region and a frame region at an edge of the display region, the temperatur

Assignees

• Boe Technology Group Co Ltd

Inventors

• Cao Xueyou
• Wang Haisheng
• Wu Chunwei
• Ding Xiaoliang
• Han Yanling
• Cheng Chihjen
• Liu Wei
• Zhang Ping
• Luan Tianhang
• Li Hao
• Guo Shaoning
• Zhu Bingqian

Classifications

• G01K7/00

  Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat (giving results other than momentary value of temperature G01K3/00) {; Power supply therefor, e.g. using thermoelectric elements} · CPC title

• G01K7/01 Primary

  using semiconducting elements having PN junctions (G01K7/02, G01K7/16, G01K7/30 take precedence) · CPC title

• G01K15/005

  Calibration · CPC title

• G01K1/028 Primary

  arrangements for numerical indication · CPC title

• H03K3/0315

  Ring oscillators · CPC title