Nanomaterial ribbon patterning method and nanomaterial ribbon pattern manufactured thereby

Patent metadata

Field	Value
Publication number	US-11247908-B2
Application number	US-201816954535-A
Country	US
Kind code	B2
Filing date	Dec 10, 2018
Priority date	Dec 29, 2017
Publication date	Feb 15, 2022
Grant date	Feb 15, 2022

Abstract

A nanomaterial ribbon patterning method includes: forming a first nanomaterial layer having a first threshold strain on an upper surface of a substrate; forming a second nanomaterial layer on an upper surface of the first nanomaterial layer; forming a thin layer having a second threshold strain smaller than the first threshold strain on an upper surface of the second nanomaterial layer; generating plural cracks on the thin layer and the second nanomaterial layer by applying tensile force to the substrate; placing a mask on an upper surface of the thin layer; removing the mask and peeling off the sacrificial layer on the upper surface of the thin layer; and removing the sacrificial layer to form a nanomaterial ribbon pattern.

First claim

The invention claimed is:

1. A nanomaterial ribbon patterning method comprising:
forming a first nanomaterial layer having a first threshold strain on an upper surface of a substrate;
forming a second nanomaterial layer on an upper surface of the first nanomaterial layer;
forming a thin layer having a second threshold strain smaller than the first threshold strain on an upper surface of the second nanomaterial layer;
generating plural cracks on the thin layer and the second nanomaterial layer by applying tensile force to the substrate;
placing a mask on an upper surface of the thin layer, followed by forming a sacrificial layer on a portion of the thin layer and portions of the cracks not masked by the mask;
removing the mask and peeling off the sacrificial layer on the upper surface of the thin layer, the thin layer and the second nanomaterial layer from the first nanomaterial layer using an adhesive film;
performing etching to allow only the sacrificial layer on the cracks and the first nanomaterial layer under the sacrificial layer to remain; and
removing the sacrificial layer to form a nanomaterial ribbon pattern constituted by a portion of the first nanomaterial layer remaining on the upper surface of the substrate.

2. The nanomaterial ribbon patterning method according to claim 1 , wherein the nanomaterial ribbon pattern has a length corresponding to a length of the portions of the cracks not masked by the mask in formation of the sacrificial layer.

3. The nanomaterial ribbon patterning method according to claim 1 , wherein the nanomaterial ribbon pattern has a spacing regulated by regulating a thickness of the thin layer in formation of the thin layer.

4. The nanomaterial ribbon patterning method according to claim 1 , wherein the nanomaterial ribbon pattern has a width regulated by regulating strain of the substrate in generation of the cracks.

5. A nanomaterial ribbon patterning method comprising:
forming a first nanomaterial layer having a first threshold strain on an upper surface of a substrate;
forming a second nanomaterial layer on an upper surface of the first nanomaterial layer;
forming a thin layer having a second threshold strain smaller than the first threshold strain on an upper surface of the second nanomaterial layer;
generating plural cracks on the thin layer and the second nanomaterial layer by applying tensile force to the substrate;
placing a mask on an upper surface of the thin layer, followed by forming a sacrificial layer on a portion of the thin layer and portions of the cracks not masked by the mask;
removing the mask and performing etching to remove portions of the first nanomaterial layer not covered by the sacrificial layer and the thin layer;
peeling off the sacrificial layer on the upper surface of the thin layer, the thin layer and the second nanomaterial layer from the first nanomaterial layer using an adhesive film; and
removing the sacrificial layer from the upper surface of the first nanomaterial layer to form a nanomaterial ribbon pattern constituted by a portion of the first nanomaterial layer remaining on the upper surface of the substrate.

6. The nanomaterial ribbon patterning method according to claim 5 , wherein a portion of the first nanomaterial layer not remaining on the upper surface of the substrate in formation of the nanomaterial ribbon pattern has a length corresponding to a length of portions of the cracks masked by the mask in formation of the sacrificial layer.

7. The nanomaterial ribbon patterning method according to claim 5 , wherein a distance between portions of the first nanomaterial layer not remaining on the upper surface of the substrate in formation of the nanomaterial ribbon pattern is regulated by regulating a thickness of the thin layer in formation of the thin layer.

8. The nanomaterial ribbon patterning method according to claim 7 , wherein the portion of the first nanomaterial layer not remaining on the upper surface of the substrate in formation of the nanomaterial ribbon pattern has a width regulated by regulating strain of the substrate in generation of the cracks.

Assignees

• Ct Advanced Meta Mat

Inventors

• Won Se Jeong
• Jung Hyun June
• Kim Jae Hyun
• Kim Kwang Seop
• Lee Hak Joo
• Jang Bong Kyun

Classifications

• H10D48/01

  Manufacture or treatment · CPC title

• H10D62/882

  Graphene · CPC title

• H10D62/121

  oriented parallel to substrates · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title