Localized functionalization of nanotextured surfaces

Patent metadata

Field	Value
Publication number	US-11247896-B2
Application number	US-201916526964-A
Country	US
Kind code	B2
Filing date	Jul 30, 2019
Priority date	Jul 31, 2018
Publication date	Feb 15, 2022
Grant date	Feb 15, 2022

Abstract

A material with a nanotexture comprising structures extending from a substrate. The structures are modified by coating the nanotexture with a protective coating and partially removing the coating, exposing a portion of the structure for functionalization.

First claim

We claim:

1. A method for functionalizing a nanotextured material comprising:
forming a nanotextured material having a plurality of structures extending in a first dimension and each of the plurality of structures having a distal portion;
applying a resist coating on the nanotextured material, the resist coating leaving an uncoated distal portion of the plurality of structures corresponding to at least some of the distal portions of the plurality of structures;
modifying the uncoated distal portions with a first functional group; and
removing the resist coating.

2. The method of claim 1 , wherein applying the resist coating comprises applying the resist coating comprises spin coating the nanotextured material.

3. The method of claim 2 , wherein the resist coating fills space between each of the plurality of structures.

4. The method of claim 2 , wherein the exposed distal portions are functionalized with the first function group and remaining portions of the plurality of structures are not functionalized with the first functional group.

5. The method of claim 1 , wherein applying the resist coating further comprises removing a portion of the resist coating to expose the exposed distal portions.

6. The method of claim 1 , further comprising:
prior to applying the resist coating, the nanotextured material is washed with tolulene; and
modifying the exposed distal portions comprises silanization, wherein the silanization comprises application of a silane solution having 0.001% to 1% v/v silane in a toluene solvent.

7. The method of claim 1 , further comprising positioning a polymeric network on the nanostructures.

8. The method of claim 1 , wherein a mask is applied to the exposed distal portions forming masked distal portions and further comprising application of a second etching after removal of the resist coating, the second etching removing proximate portions of the nanostructures that are not the masked distal portions.

9. A method for functionalizing a nanotextured material comprising:
forming a nanotextured material having a plurality of structures extending in a first dimension and each of the plurality of structures having a distal portion;
forming a resist coating on the nanotextured material by applying the resist coating to the nanotextured material and removing a portion of the resist coating, exposing distal portions;
modifying the exposed distal portions by silanization; and
removing the resist coating.

10. The method of claim 9 , wherein the exposed distal portions are functionalized with the first function group and remaining portions of the plurality of structures are not functionalized with the first functional group.

11. The method of claim 9 , wherein the plurality of structures are heterogeneous.

12. The method of claim 9 , wherein the silanization comprises application of a silane solution having 0.001% to 1% v/v silane in a first organic solvent.

13. The method of claim 12 , wherein, prior to applying the resist coating, the nanotextured material is washed with the first organic solvent, the first organic solvent comprising toluene.

14. The method of claim 13 , wherein the silane is a chlorosilane.

15. A method for functionalizing a nanotextured material comprising:
forming a nanotextured material having a plurality of structures extending in a first dimension and each of the plurality of structures having a distal portion;
applying a resist coating on the nanotextured material, wherein at least some of the distal portions of the plurality of structures are exposed beyond the resist coating;
modifying the exposed distal portions with a first functional group;
removing the resist coating; and
applying a mask to the exposed distal portions forming masked distal portions and further comprising application of a second etching after removal of the resist coating, the second etching removing proximate portions of the nanostructures that are not the masked distal portions.

16. The method of claim 15 , wherein the resist coating fills space between each of the plurality of structures.

17. The method of claim 15 , modifying the exposed distal portions comprises silanization.

18. The method of claim 17 , wherein the silanization comprises application of a silane solution having 0.001% to 1% v/v silane in a first organic solvent.

19. The method of claim 15 , wherein the exposed distal portions are functionalized with the first function group and remaining portions of the plurality of structures are not functionalized with the first functional.

20. The method of claim 15 , wherein, prior to applying the resist coating, the nanotextured material is washed with the first organic solvent, the first organic solvent comprising toluene.

Assignees

• Uchicago Argonne Llc

Inventors

• Michalska Martyna
• Laible Philip D
• Divan Ralu

Classifications

• B81C1/00388

  Etch mask forming · CPC title

• A61M37/0015

  by using microneedles · CPC title

• B81C1/00111 Primary

  Tips, pillars, i.e. raised structures (microneedles A61M37/0015) · CPC title

• B81B2201/055

  Microneedles · CPC title

• B81B2207/056

  of static structures · CPC title