Semiconductor switch control circuit and switching power source device

Patent metadata

Field	Value
Publication number	US-11239741-B2
Application number	US-201816979523-A
Country	US
Kind code	B2
Filing date	Mar 16, 2018
Priority date	Mar 16, 2018
Publication date	Feb 1, 2022
Grant date	Feb 1, 2022

Abstract

A semiconductor switch control circuit includes: a pulse signal generating part configured to generate a pulse signal which becomes a time reference for performing an ON/OFF control of a semiconductor switch; a drive current generating part configured to generate a drive current based on the pulse signal which the pulse signal generating part generates and to supply the drive current to a gate electrode of the semiconductor switch; a current detecting part configured to detect a drain current or a source current of the semiconductor switch; and a drive current control part configured to have a function of controlling a drive current which the drive current generating part generates based on the pulse signal which the pulse signal generating part generates and the current which the current detecting part detects.

First claim

The invention claimed is:

1. A semiconductor switch control circuit configured to perform an ON/OFF control of a semiconductor switch having a source electrode, a drain electrode and a gate electrode by supplying a drive current to the gate electrode, the semiconductor switch control circuit comprising:
a pulse signal generating part configured to generate a pulse signal which becomes a time reference for performing the ON/OFF control of the semiconductor switch;
a drive current generating part configured to generate the drive current based on the pulse signal which the pulse signal generating part generates and to supply the drive current to the gate electrode of the semiconductor switch;
a current detecting part configured to detect a drain current or a source current of the semiconductor switch, or a current which flows through a predetermined current path of a peripheral circuit of the semiconductor switch; and
a drive current control part configured to have a function of controlling the drive current which the drive current generating part generates based on the pulse signal which the pulse signal generating part generates and the current which the current detecting part detects,
wherein the drive current generating part includes:
a source part configured to charge a current to the gate electrode of the semiconductor switch; and
a sink part configured to discharge a current from the gate electrode of the semiconductor switch,

wherein the drive current control part is configured to control the drive current by controlling a charge current to be charged to the gate electrode of the semiconductor switch, or a discharge current to be discharged from the gate electrode of the semiconductor switch, and
wherein the drive current control part is configured, when a current which the current detecting part detects exceeds a predetermined first set current, to control the drive current such that a falling speed of a gate voltage during a turn-off period of the semiconductor switch becomes lower than the falling speed of the gate voltage before detection of the current by the current detecting part which exceeds the predetermined first set current.

2. The semiconductor switch control circuit according to claim 1 , wherein the drive current control part is capable of setting a plurality of current levels as the first set current, and is configured to control the drive current such that the falling speed of the gate voltage is lowered in a stepwise manner in accordance with a detection of a current which exceeds a higher current level among the plurality of current levels by the current detection part.

3. The semiconductor switch control circuit according to claim 1 , further comprising a second pulse signal generating part configured to generate a second pulse signal when a current which the current detecting part detects exceeds the first set current, wherein
the drive current control part is configured to control the drive current based on the second pulse signal which the second pulse signal generating part generates.

4. The semiconductor switch control circuit according to claim 3 , wherein
the sink part includes a plurality of discharge current paths which are connected to each other in parallel, and
the drive current control part includes: an R terminal into which the pulse signal from the pulse signal generating part is inputted; an S terminal into which the second pulse signal from the second pulse signal generating part is inputted; and a Q terminal from which a control signal for controlling the discharge current is outputted, and the drive current control part also includes an RS flip-flop which is configured, when the second pulse signal is inputted from the second pulse signal generating part during an ON period, to stop a discharge operation on at least one discharge current path out of the plurality of discharge current paths at the time of turning off the semiconductor switch following the ON period.

5. The semiconductor switch control circuit according to claim 3 , wherein
the sink part includes a plurality of discharge current paths which are connected to each other in parallel, and
the drive current control part includes a charge/discharge control part which is configured, when the second pulse signal is inputted from the second pulse signal generating part during an ON period, to stop a discharge operation on at least one discharge current path out of the plurality of discharge current paths at the time of turning off the semiconductor switch following the ON period.

6. The semiconductor switch control circuit according to claim 5 , wherein the plurality of discharge current paths respectively have different discharge abilities.

7. The semiconductor switch control circuit according to claim 3 , wherein the drive current control part includes a charge/discharge control part which is configured, when the second pulse signal is inputted from the second pulse signal generating part during an ON period, to decrease, in an analogue manner, a current amount of a current which flows through the sink part at the time of turning off the semiconductor switch following the ON period.

8. The semiconductor switch control circuit according to claim 1 , wherein the first set current or the second set current is set to a value which exceeds a current range of the drain current or the source current in a rated load region of the semiconductor switch or a current which flows through a predetermined current path of a peripheral circuit of the semiconductor switch.

9. The semiconductor switch control circuit according to claim 1 , wherein the semiconductor switch is formed of a wide gap semiconductor.

10. The semiconductor switch control circuit according to claim 9 , wherein the wide gap semiconductor is formed of silicon carbide, gallium nitride, gallium oxide or diamond.

11. A semiconductor switch control circuit configured to perform an ON/OFF control of a semiconductor switch having a source electrode, a drain electrode and a gate electrode by supplying a drive current to the gate electrode, the semiconductor switch control circuit comprising:
a pulse signal generating part configured to generate a pulse signal which becomes a time reference for performing the ON/OFF control of the semiconductor switch;
a drive current generating part configured to generate the drive current based on the pulse signal which the pulse signal generating part generates and to supply the drive current to the gate electrode of the semiconductor switch;
a current detecting part configured to detect a drain current or a source current of the semiconductor switch, or a current which flows through a predetermined current path of a peripheral circuit of the semiconductor switch; and
a drive current control part configured to have a function of controlling the drive current which the drive current generating part generates based on the pulse signal which the pulse signal generating part generates and the current which the current detecting part detects,
wherein the drive current generating part includes:
a source part configured to charge a current to the gate electrode of the semiconductor switch; and
a sink part configured to discharge a current from the gate electrode of the semiconductor switch,

wherein the drive current control part is configured to control the drive current by controlling a charge current to be charged to the gate electrode of the semiconductor switch, or a discharge current to be discharged from the gate electrode of the semiconductor switch, and
wherein the drive current control part is configured, when a current which the current detecting part detects exceeds a predetermined second set

Assignees

• Shindengen Electric Mfg

Inventors

• Miyazawa Wataru
• Hisada Shigeru

Classifications

• H03K17/04106

  in field-effect transistor switches (H03K17/0412, H03K17/0416 take precedence) · CPC title

• H02M1/0009

  Devices or circuits for detecting current in a converter · CPC title

• H02M1/08 Primary

  Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters · CPC title

• H02M1/0054

  Transistor switching losses (periodically suspending operation of switching converter in low power mode H02M1/0035) · CPC title

• H03K17/162

  without feedback from the output circuit to the control circuit · CPC title