Terahertz element and semiconductor device

Patent metadata

Field	Value
Publication number	US-11239547-B2
Application number	US-201816619440-A
Country	US
Kind code	B2
Filing date	Jun 26, 2018
Priority date	Jun 27, 2017
Publication date	Feb 1, 2022
Grant date	Feb 1, 2022

Abstract

A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes a first antenna part extending along a first direction, a first capacitor part offset from the active element in a second direction as viewed in a thickness direction of the substrate, and a first conductive part connected to the first capacitor part. The second direction is perpendicular to the thickness direction and first direction. The second conductive layer includes a second capacitor part, stacked over and insulated from the first capacitor part. The substrate includes a part exposed from the first and second capacitor parts. The first conductive part has a portion spaced apart from the first antenna part in the second direction with the exposed part therebetween as viewed in the thickness direction.

First claim

The invention claimed is:

1. A terahertz element comprising:
a semiconductor substrate;
a first conductive layer and a second conductive layer each formed on the semiconductor substrate and insulated from each other; and
an active element formed on the semiconductor substrate and electrically connected to the first conductive layer and the second conductive layer, wherein
the first conductive layer includes a first antenna part extending along a first direction, a first capacitor part positioned offset from the active element in a second direction as viewed in a thickness direction of the semiconductor substrate, and a first conductive part connected to the first capacitor part, the second direction being perpendicular to the thickness direction and the first direction,
the second conductive layer includes a second capacitor part, the second capacitor part being stacked over the first capacitor part while being insulated from the first capacitor part,
the semiconductor substrate includes an exposed part that is exposed from the first capacitor part and the second capacitor part, and
the first conductive part has a portion that is spaced apart from the first antenna part in the second direction with the exposed part therebetween as viewed in the thickness direction.

2. The terahertz element according to claim 1 , wherein the second conductive layer includes a second antenna part extending along a third direction that is opposite to the first direction.

3. The terahertz element according to claim 2 , wherein the first conductive layer includes a first inductance part, the first inductance part being connected to the first antenna part and the first capacitor part while extending from the first antenna part to the first capacitor part along the second direction, and
the second conductive layer includes a second inductance part, the second inductance part being connected to the second antenna part and the second capacitor part while extending from the second antenna part to the second capacitor part along the second direction.

4. The terahertz element according to claim 2 , wherein the first capacitor part has a first capacitor-part side surface that is a side of the first capacitor part in the first direction,
the first capacitor-part side surface of the first capacitor part is offset in the third direction from an end of the first antenna part in the first direction,
the second capacitor part has a first capacitor-part side surface that is on a side of the second capacitor part in the first direction, and
the first capacitor-part side surface of the second capacitor part is offset in the third direction from the end of the first antenna part in the first direction.

5. The terahertz element according to claim 4 , wherein the first capacitor part has a second capacitor-part side surface that is on a side of the first capacitor part in the third direction,
the second capacitor-part side surface of the first capacitor part is offset in the first direction from an end of the second antenna part in the third direction,
the second capacitor part has a second capacitor-part side surface that is on a side of the second capacitor part in the third direction, and
the second capacitor-part side surface of the second capacitor part is offset in the first direction from the end of the second antenna part in the third direction.

6. The terahertz element according to claim 1 , wherein the first capacitor part has a dimension in the first direction that is different from a dimension of the second capacitor part in the second direction.

7. The terahertz element according to claim 1 , wherein the first conductive part has a first conductive-part side surface that is spaced apart from the first antenna part in the second direction, and
the first conductive-part side surface extends along the first direction.

8. The terahertz element according to claim 1 , wherein the first conductive part has a portion held in direct contact with the semiconductor substrate.

9. The terahertz element according to claim 1 , wherein the second conductive layer includes a second conductive part connected to the second capacitor part, and
the first conductive part is spaced apart from the second conductive part in the first direction.

10. The terahertz element according to claim 1 , wherein the first conductive part includes a first conductive section and a first extension extending out of the first conductive section,
the first extension is connected to the first capacitor part,
the second conductive part includes a second conductive section and a second extension extending out of the second conductive section, and
the second extension is connected to the second capacitor part.

11. The terahertz element according to claim 3 , wherein the second conductive layer includes a second conductive part disposed opposite to the first conductive part with the active element therebetween.

12. The terahertz element according to claim 11 , wherein an entirety of the first capacitor part overlaps with the first conductive part in the first direction.

13. The terahertz element according to claim 11 , wherein the first conductive layer includes a third capacitor part and a third inductance part,
the third capacitor part is positioned opposite to the first capacitor part with the first antenna part therebetween,
the third inductance part is connected to the first antenna part and the third capacitor part while extending from the third capacitor part to the first antenna part along the second direction,
the second conductive layer includes a fourth capacitor part and a fourth inductance part,
the fourth capacitor part is positioned opposite to the second capacitor part with the second antenna part therebetween, and
the fourth inductance part is connected to the second antenna part and the fourth capacitor part while extending from the fourth capacitor part to the second antenna part along the second direction.

14. The terahertz element according to claim 1 , further comprising an insulating layer interposed between the semiconductor substrate and each of the first conductive layer and the second conductive layer.

15. The terahertz element according to claim 14 , wherein a part of the insulating layer is interposed between the first capacitor part and the second capacitor part.

16. A semiconductor device comprising:
a support;
a terahertz element as set forth in claim 1 , the terahertz element being disposed on the support; and
an insulating part disposed on the support, wherein
the insulating part is formed with an opening in which the terahertz element is housed, and
the opening has a first side surface, the first side surface being inclined with respect to a thickness direction of the support.

17. The semiconductor device according to claim 16 , wherein the opening has a second side surface surrounding the terahertz element, the second side surface being positioned between the first side surface and the support in the thickness direction of the support, and
the second side surface extends along the thickness direction of the support.

18. The semiconductor device according to claim 17 , wherein the second side surface has a dimension in the thickness direction of the support that is larger than a dimension of the terahertz element in the thickness direction of the support.

19. The semiconductor device according to claim 17 , further comprising a metal layer formed on the first side surface.

20. The semiconductor device according to c

Assignees

• Rohm Co Ltd

Inventors

• Mukai Toshikazu
• Kim Jaeyoung
• Toyama Tomoichiro

Classifications

• H10D62/852

  being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP · CPC title

• H10W74/10

  characterised by their shape or disposition · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W44/248

  for antennas · CPC title