Semiconductor structure with isolation structures in doped region and fabrication method thereof

Patent metadata

Field	Value
Publication number	US-11239358-B2
Application number	US-202016745601-A
Country	US
Kind code	B2
Filing date	Jan 17, 2020
Priority date	Jan 31, 2019
Publication date	Feb 1, 2022
Grant date	Feb 1, 2022

Abstract

A semiconductor structure and fabrication method are provided. The method includes: providing a substrate with a first doped region and a second doped region; forming discrete first isolation structures in the second doped region; forming a third doped region in the second doped region between adjacent first isolation structures and under the first isolation structures; forming a gate structure; forming a source region in the first doped region; and forming a drain region in the second doped region. The first doped region includes first doping ions and the second doped region includes second doping ions with a conductivity type opposite to a conductivity type of the first doping ions. The third doped region includes third doping ions with a conductivity type opposite to the conductivity type of the second doping ions. A portion of the first isolation structure is located between the gate structure and the drain region.

First claim

What is claimed is:

1. A fabrication method for a semiconductor structure,
comprising:
providing a substrate including a first doped region and a second doped region adjacent to the first doped region in the substrate, wherein the first doped region is doped with first doping ions and the second doped region is doped with second doping ions having a conductivity type opposite to a conductivity type of the first doping ions;
forming a plurality of first isolation structures in the second doped region, wherein the plurality of first isolation structures are discrete from each other;
forming a third doped region in the second doped region between each two adjacent first isolation structures of the plurality of first isolation structures and under the plurality of first isolation structures, each two adjacent first isolation structures of the plurality of first isolation structures being isolated from each other by the third doped region, wherein the third doped region is doped with third doping ions and the third doping ions have a conductivity type opposite to the conductivity type of the second doping ions;
forming a gate structure on a portion of a surface of the first doped region, on a portion of a surface of the second doped region, and on a portion of surfaces of the plurality of first isolation structures;
forming a source region in the first doped region at a side of the gate structure; and
forming a drain region in the second doped region at another side of the gate structure, wherein a portion of the plurality of first isolation structures is located between the gate structure and the drain region.

2. The fabrication method according to claim 1 , wherein forming the plurality of first isolation structures includes:
forming a first mask layer on the substrate, on the first doped region, and on the second doped region, wherein the first mask layer includes a plurality of first mask openings exposing the second doped region;
etching the second doped region by using the first mask layer as a mask, to form first isolation openings; and
forming the plurality of first isolation structures in the first isolation openings, wherein each of the plurality of first isolation structures fills up a corresponding first isolation opening.

3. The fabrication method according to claim 1 , wherein: the plurality of first isolation structures is made of a material including SiO2, SiNOx, or a combination thereof.

4. The fabrication method according to claim 1 , wherein:
a voltage applied on the drain region is about 500 V to about 700 V.

5. The fabrication method according to claim 4 , wherein along a direction from the source region to the drain region:
a sum of a size of each of the plurality of first isolation structures is about 40 μm to about 50 μm; and
a number of the plurality of first isolation structures is about 3 to about 4.

6. The fabrication method according to claim 1 , wherein:
a thickness of the plurality of first isolation structures is about 360 nm to about 400 nm.

7. The fabrication method according to claim 1 , wherein:
a concentration of the second doping ions is about 2×10 15 atoms/cm 3 to about 3×10 15 atoms/cm 3 .

8. A semiconductor structure, comprising:
a substrate;
a first doped region and a second doped region adjacent to the first doped region in the substrate, wherein the first doped region is doped with first doping ions and the second doped region is doped with second doping ions having a conductivity type opposite to a conductivity type of the first doping ions;
a plurality of first isolation structures in the second doped region, wherein the plurality of first isolation structures are discrete from each other;
a third doped region in the second doped region between each two adjacent first isolation structures of the plurality of first isolation structures and under the plurality of first isolation structures, each two adjacent first isolation structures of the plurality of first isolation structures being isolated from each other by the third doped region, wherein the third doped region is doped with third doping ions and the third doping ions have a conductivity type opposite to the conductivity type of the second doping ions;
a gate structure on a portion of a surface of the first doped region, on a portion of a surface of the second doped region, and on a portion of surfaces of the plurality of first isolation structures;
a source region in the first doped region at a side of the gate structure; and
a drain region in the second doped region at another side of the gate structure, wherein a portion of the plurality of first isolation structures is located between the gate structure and the drain region.

9. The semiconductor structure according to claim 8 , wherein:
the plurality of first isolation structures is made of a material including SiO 2 , SiNO x , or a combination thereof.

10. The semiconductor structure according to claim 8 , wherein a voltage applied on the drain region is about 500 V to about 700 V.

11. The semiconductor structure according to claim 8 , wherein along a direction from the source region to the drain region:
a sum of a size of each of the plurality of first isolation structures is about 40 μm to about 50 μm; and
a number of the plurality of first isolation structures is about 3 to about 4.

12. The semiconductor structure according to claim 8 , wherein a thickness of the plurality of first isolation structures is about 360 nm to about 400 nm.

13. The semiconductor structure according to claim 8 , wherein:
a concentration of the second doping ions is about 2×10 15 atoms/cm 3 to about 3×10 15 atoms/cm 3 .

14. The semiconductor structure according to claim 8 , wherein:
at least two of the plurality of first isolation structures are located between the gate structure and the drain region and have no contact with the gate structure.

Assignees

• Semiconductor Mfg Int Shanghai Corp
• Semiconductor Mfg Int Beijing Corp

Inventors

• Li Mao
• Jung Dae Sub
• Chen De Yan

Classifications

• H10P50/691

  for Group V materials or Group III-V materials · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title