Oxide semiconductor and semiconductor device
US-2020035792-A1 · Jan 30, 2020 · US
P-type oxide semiconductor and semiconductor device having pyrochlore structure
US11239322B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11239322-B2 |
| Application number | US-201816487993-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 22, 2018 |
| Priority date | Feb 23, 2017 |
| Publication date | Feb 1, 2022 |
| Grant date | Feb 1, 2022 |
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Abstract
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Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal structure including a pyrochlore structure, containing at least one or more kinds of elements selected from Nb and Ta, and containing Sn element, and its holes become charge carriers by the condition that Sn4+/(Sn2++Sn4+) which is a ratio of Sn4+ to a total amount of Sn in the composite oxide is 0.124≤Sn4+/(Sn2++Sn4+)≤0.148.
First claim
Opening claim text (preview).
What is claimed is: 1. A p-type oxide semiconductor comprising: a composite oxide having a crystal structure, containing at least one or more kinds of elements selected from Nb and Ta, and containing Sn element, the crystal structure including a pyrochlore structure, wherein Sn 4+ /(Sn 2+ +Sn 4+ ), which is a ratio of Sn 4+ to a total amount of Sn in the composite oxide, is 0.13≤Sn 4+ /(Sn 2+ +Sn 4+ ) 0.148. 2. The p-type oxide semiconductor according to claim 1 , wherein the composite oxide represented by Sn 2 Nb 2 O 7 or Sn 2 Ta 2 O 7 . 3. The p-type oxide semiconductor according to claim 1 , wherein at least one or more elements selected from a group consisting of W, Zr, V, Mn, Ti, Ga, Hf, and Mo is added as an additive element. 4. The p-type oxide semiconductor according to claim 3 , wherein the additive element is 0.001 atm % or more and 10 atom % or less in total of an additive element. 5. The p-type oxide semiconductor according to claim 1 , wherein Sn/(Nb+Ta) is in a range of 1±0.02. 6. A semiconductor device including the p-type oxide semiconductor according to claim 1 . 7. The p-type oxide semiconductor according to claim 2 , wherein at least one or more elements selected from a group consisting of W, Zr, V, Mn, Ti, Ga, Hf, and Mo is added as an additive element. 8. The p-type oxide semiconductor according to claim 2 , wherein Sn/(Nb+Ta) is in a range of 1±0.02. 9. The p-type oxide semiconductor according to claim 3 , wherein Sn/(Nb+Ta) is in a range of 1±0.02. 10. The p-type oxide semiconductor according to claim 4 , wherein Sn/(Nb+Ta) is in a range of 1±0.02. 11. The p-type oxide semiconductor according to claim 7 , wherein Sn /(Nb+Ta) is in a range of 1±0.02. 12. A semiconductor device including the p-type oxide semiconductor according to claim 2 . 13. A semiconductor device including the p-type oxide semiconductor according to claim 3 . 14. A semiconductor device including the p-type oxide semiconductor according to claim 4 . 15. A semiconductor device including the p-type oxide semiconductor according to claim 5 . 16. A semiconductor device including the p-type oxide semiconductor according to claim 7 . 17. A semiconductor device including the p-type oxide semiconductor according to claim 8 . 18. A semiconductor device including the p-type oxide semiconductor according to claim 9 . 19. A semiconductor device including the p-type oxide semiconductor according to claim 10 . 20. A semiconductor device including the p-type oxide semiconductor according to claim 11 .
Assignees
Inventors
Classifications
Indexing scheme associated with group B01J35/00, related to the analysis techniques used to determine the catalysts form or properties · CPC title
X-ray diffraction · CPC title
characterised by their physical properties · CPC title
Pyrochlore-type A2B2O7 · CPC title
Crystalline structures · CPC title
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- What does patent US11239322B2 cover?
- Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal structure including a pyrochlore structure, containing at least one or more kinds of elements se…
- Who is the assignee on this patent?
- Aist
- What technology area does this patent fall under?
- Primary CPC classification H10D62/86. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 01 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).