Quantum dots, a composition or composite including the same, and an electronic device including the same

Patent metadata

Field	Value
Publication number	US-11236270-B2
Application number	US-201916507406-A
Country	US
Kind code	B2
Filing date	Jul 10, 2019
Priority date	Nov 29, 2018
Publication date	Feb 1, 2022
Grant date	Feb 1, 2022

Abstract

Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.

First claim

What is claimed is:

1. A quantum dot comprising
a semiconductor nanocrystal core comprising indium and phosphorous,
a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc and selenium, and
a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell comprising zinc and sulfur,
wherein the quantum dot does not comprise cadmium, and
wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1, and
wherein when the quantum dot has a photoluminescent peak wavelength in a range from about 500 nanometers to about 550 nanometers, and a molar ratio of zinc with respect to indium is less than or equal to 48:1, and
when the quantum dot has a photoluminescent peak wavelength in a range from about 600 nanometers to about 650 nanometers, a molar ratio of zinc with respect to indium is less than or equal to about 30:1.

2. The quantum dot of claim 1 , wherein a thickness of the first semiconductor nanocrystal shell is greater than or equal to about 3 monolayers.

3. The quantum dot of claim 1 , wherein a thickness of the second semiconductor nanocrystal shell is less than 0.7 nanometers.

4. The quantum dot of claim 1 , wherein when the quantum dot has a photoluminescent peak wavelength in a range from about 500 nanometers to about 550 nanometers, and a molar ratio of zinc with respect to indium is less than or equal to about 47:1 and
when the quantum dot has a photoluminescent peak wavelength in a range from about 600 nanometers to about 650 nanometers, a molar ratio of zinc with respect to indium is less than or equal to about 28:1.

5. The quantum dot of claim 1 , wherein when the quantum dot has a photoluminescent peak wavelength in a range from about 500 nanometers to about 550 nanometers, a molar ratio of sulfur with respect to selenium is greater than or equal to about 0.05:1 and less than or equal to about 1:1 and
when the quantum dot has a photoluminescent peak wavelength in a range from about 600 nanometers to about 650 nanometers, a molar ratio of sulfur with respect to selenium is greater than or equal to about 0.1:1 and less than or equal to about 2:1.

6. The quantum dot of claim 1 , wherein a thickness of the first semiconductor nanocrystal shell is greater than or equal to about 0.9 nanometers and less than or equal to about 3.1 nanometers.

7. The quantum dot of claim 1 , wherein a thickness of the second semiconductor nanocrystal shell is less than or equal to about 0.6 nanometers.

8. The quantum dot of claim 1 , wherein a quantum efficiency of the quantum dot is greater than or equal to about 65%.

9. The quantum dot of claim 1 , wherein a quantum efficiency of the quantum dot is greater than or equal to about 70%.

10. The quantum dot of claim 1 , wherein in an ultraviolet-visible absorption spectrum of the quantum dot, a ratio of an absorbance at 450 nanometers to an absorbance at 350 nanometers is greater than or equal to about 0.08:1.

11. The quantum dot of claim 1 , wherein the semiconductor nanocrystal core further comprises zinc.

12. The quantum dot of claim 1 , wherein the first semiconductor nanocrystal shell does not comprise sulfur.

13. The quantum dot of claim 1 , wherein the first semiconductor nanocrystal shell is disposed directly on a surface of the semiconductor nanocrystal core.

14. The quantum dot of claim 1 , wherein the second semiconductor nanocrystal shell is an outermost layer of the quantum dot.

15. The quantum dot of claim 1 , wherein the second semiconductor nanocrystal shell is disposed directly on a surface of the first semiconductor nanocrystal shell.

16. The quantum dot of claim 1 , wherein when the quantum dot has a photoluminescent peak wavelength in a range from about 500 nanometers to about 550 nanometers, the core has a size of greater than or equal to about 1 nanometer and less than about 2.7 nanometers, and
when the quantum dot has a photoluminescent peak wavelength in a range from about 600 nanometers to about 650 nanometers, the core has a size of greater than or equal to about 2 nanometers.

17. The quantum dot of claim 1 , wherein the quantum dot does not comprise an alkane monothiol compound on a surface thereof.

18. A quantum dot-polymer composite comprising:
a polymer matrix; and
a plurality of quantum dots comprising the quantum dot of claim 1 dispersed in the polymer matrix.

19. The quantum dot-polymer composite of claim 18 , wherein the polymer matrix comprises a carboxylic acid group containing binder polymer, and wherein the carboxylic acid group containing binder polymer comprises:
a copolymer of a monomer mixture comprising a first monomer comprising a carboxylic acid group and a carbon-carbon double bond, a second monomer comprising a carbon-carbon double bond and a hydrophobic moiety and not comprising a carboxylic acid group, and optionally a third monomer comprising a carbon-carbon double bond and a hydrophilic moiety and not comprising a carboxylic acid group;
a multiple aromatic ring-containing polymer comprising a backbone structure in which two aromatic rings are bound to a quaternary carbon atom that is a constituent atom of another cyclic moiety in a main chain of the backbone structure, the multiple aromatic ring-containing polymer comprising a carboxylic acid group; or
a combination thereof.

20. The quantum dot-polymer composite of claim 18 , wherein the polymer matrix further comprises a polymerization product of a monomer combination comprising a thiol compound comprising at least one thiol group and an ene compound comprising a carbon-carbon unsaturated bond, a metal oxide fine particle, or a combination thereof.

21. The quantum dot-polymer composite of claim 18 , wherein the quantum dot-polymer composite is in the form of a patterned film.

22. The quantum dot-polymer composite of claim 18 , wherein when the quantum dot-polymer composite is in the form of a film having a thickness of about 6 micrometers, an amount of the plurality of quantum dots is less than or equal to about 45% by weight, based on a total weight of the composite, and an absorption of blue light of a wavelength of about 450 nanometers is greater than or equal to about 89%.

23. A display device, comprising
a light source and a light emitting element,
wherein the light emitting element comprises the quantum dot-polymer composite of claim 18 and the light source is configured to provide the light emitting element with incident light.

24. The display device of claim 23 , wherein the incident light has a luminescence peak wavelength of about 440 nanometers to about 460 nanometers.

25. The display device of claim 23 , wherein, the light emitting element comprises a sheet comprising the quantum dot-polymer composite.

26. The display device of claim 23 , wherein the light emitting element comprises a stacked structure comprising a substrate and a light emitting layer disposed on the substrate,
wherein the light emitting layer comprises a pattern comprising the quantum dot-polymer composite and the pattern comprises a repeating section configured to emit light at a predetermined wavelength.

27. The display device of claim 26 , wherein the pattern comprises a first section configured to emit a first light and a seco

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Garam
• Kim Tae Gon
• Ahn Jooyeon
• Kim Ji-Yeong
• Won Nayoun
• Jun Shin Ae

Classifications

• G02B5/20

  Filters (polarising elements G02B5/30) · CPC title

• H10H20/8512

  Wavelength conversion materials · CPC title

• C09K11/02 Primary

  Use of particular materials as binders, particle coatings or suspension media therefor · CPC title

• H10K59/805

  Electrodes · CPC title

• H10K59/12

  Active-matrix OLED [AMOLED] displays · CPC title