Semiconductor laser and atomic oscillator

Patent metadata

Field	Value
Publication number	US-11233376-B2
Application number	US-202016832100-A
Country	US
Kind code	B2
Filing date	Mar 27, 2020
Priority date	Mar 28, 2019
Publication date	Jan 25, 2022
Grant date	Jan 25, 2022

Abstract

There is provided a semiconductor laser including: a first mirror layer; a second mirror layer; an active layer; a current confinement layer; a first region including a plurality of first oxidized layers; and a second region including a plurality of second oxidized layers, in which, in a plan view, the laminated body includes a first part including the first region and the second region, a second part including the first region and the second region, and a third part disposed between the first part and the second part and resonating light generated in the active layer, the third part includes a fourth part including the first region and the second region and having a first groove, a fifth part including the first region and the second region and having a second groove, and a sixth part disposed between the fourth part and the fifth part and sandwiched between the first part and the second part, in a plan view.

First claim

What is claimed is:

1. A semiconductor laser comprising:
a first mirror layer;
a second mirror layer;
an active layer disposed between the first mirror layer and the second mirror layer;
a current confinement layer disposed between the first mirror layer and the second mirror layer;
a first region provided continuously with the first mirror layer and including a plurality of first oxidized layers; and
a second region provided continuously with the second mirror layer and including a plurality of second oxidized layers, wherein
the first mirror layer, the second mirror layer, the active layer, the current confinement layer, the first region, and the second region constitute a laminated body,
in a plan view, the laminated body includes
a first part including the first region and the second region,
a second part including the first region and the second region, and
a third part disposed between the first part and the second part and resonating light generated in the active layer,

the third part includes
a fourth part including the first region and the second region and having a first groove,
a fifth part including the first region and the second region and having a second groove, and
a sixth part disposed between the fourth part and the fifth part and sandwiched between the first part and the second part, in a plan view.

2. The semiconductor laser according to claim 1 , wherein
the first groove is provided along an outer edge of the fourth part in a plan view, and
the second groove is provided along an outer edge of the fifth part in a plan view.

3. The semiconductor laser according to claim 2 , wherein
the first groove includes a third groove and a fourth groove separated from the third groove, and
the second groove includes a fifth groove and a sixth groove separated from the fifth groove.

4. The semiconductor laser according to claim 2 , wherein
one end and the other end of the first groove are positioned at the sixth part, and
one end and the other end of the second groove are positioned at the sixth part.

5. The semiconductor laser according to claim 1 , wherein
the first groove and the second groove are not provided at the sixth part.

6. The semiconductor laser according to claim 1 , wherein
a depth of the first groove and a depth of the second groove are equal to or greater than a thickness of the laminated body.

7. The semiconductor laser according to claim 1 , further comprising:
a resin layer disposed at the fourth part and the fifth part.

8. An atomic oscillator comprising:
a semiconductor laser;
an atom cell irradiated with light emitted from the semiconductor laser and containing alkali metal atoms; and
a light receiving element that detects intensity of light transmitted through the atom cell and outputs a detection signal, wherein
the semiconductor laser includes
a first mirror layer,
a second mirror layer,
an active layer disposed between the first mirror layer and the second mirror layer,
a current confinement layer disposed between the first mirror layer and the second mirror layer,
a first region provided continuously with the first mirror layer and including a plurality of first oxidized layers, and
a second region provided continuously with the second mirror layer and including a plurality of second oxidized layers,

the first mirror layer, the second mirror layer, the active layer, the current confinement layer, the first region, and the second region constitute a laminated body,
in a plan view, the laminated body includes
a first part including the first region and the second region,
a second part including the first region and the second region, and
a third part disposed between the first part and the second part and resonating light generated in the active layer,

the third part includes
a fourth part including the first region and the second region and having a first groove,
a fifth part including the first region and the second region and having a second groove, and
a sixth part disposed between the fourth part and the fifth part and sandwiched between the first part and the second part, in a plan view.

Assignees

• Seiko Epson Corp

Inventors

• Okamoto Junichi
• Kobayashi Koichi
• Miyata Takashi

Classifications

• H01S5/18355

  having a defined polarisation · CPC title

• H01S5/3432

  the whole junction comprising only (AI)GaAs · CPC title

• H01S5/18347

  Mesa comprising active layer · CPC title

• H01S5/18311 Primary

  using selective oxidation · CPC title

• H01S5/18338

  Non-circular shape of the structure · CPC title