Organic semiconductor element, strain sensor, vibration sensor, and manufacturing method for organic semiconductor element
US-12068093-B2 · Aug 20, 2024 · US
US11233207B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11233207-B2 |
| Application number | US-201816179294-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 2, 2018 |
| Priority date | Nov 2, 2017 |
| Publication date | Jan 25, 2022 |
| Grant date | Jan 25, 2022 |
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Organic devices comprising an organic semiconducting acceptor motif coupled to a donor motif. Examples include IOTIC-2F, ITOTIC-2F, COTIC-4F, and SiOTIC-4F as acceptor materials. The acceptor materials have narrow bandgap (1.1 eV-1.3 eV), strong near-IR absorption and high solar cell EQE in near infrared (IR) region. The acceptor materials may also be used as the absorbing/light sensitive region in an IR photodetector.
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What is claimed is: 1. An organic device, comprising: an active region comprising an organic semiconducting acceptor molecule having a structure: wherein: each Ar is independently a substituted or non-substituted aromatic functional group, or each Ar is independently nothing and the valence of its respective thiophene ring is completed with hydrogen; X is C, Si, Ge, N or P; Y is O, S, Se or N—R 3 ; Z is O, S, Se, or N—R 3 ; each R 1 , R 2 , and R 3 is independently hydrogen or a substituted or non-substituted alkyl, aryl or alkoxy chain; R 4 is either a hydrogen or the same as Z—R 2 ; and A is an acceptor moiety. 2. The device of claim 1 , wherein the dithiophene has side chains soluble in a solvent used to solution process the device. 3. The device of claim 1 , wherein the organic semiconducting acceptor molecule has the structure: wherein R is a solubilizing chain comprising a substituted or non-Substituted alkyl, aryl or alkoxy chain. 4. The device of claim 1 , wherein— the organic semiconducting molecule has the structure: wherein X is C, Si, Ge, N or P; Y is O, S or Se; Z is O or S. 5. The device of claim 1 ,—wherein: the R, R 1 , R 2 , R 3 and/or R 4 ; each comprise a substituted or non-substituted alkyl, aryl or alkoxy chain including, but not limited to, a C 6 -C 50 substituted or non-substituted alkyl or alkoxy chain, —(CH 2 CH 2 O) n (n=2˜30), C 6 H 5 , —C n F (2n+1) (n=2˜50),—(CH 2 ) n N(CH 3 ) 3 Br (n=2˜50), 2-ethylhexyl, PhC m H 2m+1 (m=1-50), —(CH 2 ) n N(C 2 H 5 ) 2 (n=2˜50), —(CH 2 ) n Si(C m H 2m+l ) 3 (m, n=1 to 50), or —(CH 2 ) n Si(OSi(C m H 2m+1 ) 3 ) x (C p H 2p+1 ) y (m, n, p=1 to 50, x+y=3). 6. The device of claim 1 , wherein A is a compound of the structure: Y and Z are each independently CH, CF, N, C—CN or C—OR, and X═O, S, Se, or N—R where R is H or a solubilizing chain. 7. The device of claim 1 , wherein A is a compound of the structure: X 1 and X 2 are each independently O, S, or a malonitrile, Y is one or more halogens, —CN, or any solubilizing chain, and Ar is any aryl unit. 8. The device of claim 1 , further comprising an organic semiconducting donor molecule. 9. The device of claim 8 , wherein the donor molecule comprises PTB7-Th or PBDB-T. 10. The device of claim 1 , wherein the active region is a sensing element in the photodetector comprising an infrared photodetector. 11. The device of claim 1 , further comprising: an organic semiconducting donor molecule forming heterojunction with the organic semiconducting acceptor molecule; a first electrode coupled to the organic semiconducting acceptor molecule to receive electrons in electron-hole pairs generated in response to electromagnetic radiation; a second electrode coupled to the organic semiconducting donor molecule to receive holes in the electron-hole pairs, wherein: the device comprises a photodetector having an external quantum efficiency (EQE) above 50% in the wavelength range of 900-950 nm when the second electrode is biased negatively with respect to the first electrode. 12. The device of claim 1 , wherein the device has an external quantum efficiency (EQE) above 55% in the wavelength range of 600-1000 nm. 13. The device of claim 1 ,—wherein A is a compound of the structure: X 1 , X 2 , and X 3 are each independently a halogen, CN, alkoxy, alkylthio, N-annulated (a ring comprising N), or S—annulated (a ring comprising S), Y 1 , Y 2 , Y 3 , and Y 4 are each independent S or O, and R 1 and R 2 are each independently H or a solubilizing chain. 14. The device of claim 1 , wherein A is a compound of the structure: 15. A composition of matter, comprising: a molecule of the structure: wherein R is a solubilizing chain comprising a substituted or non-substituted alkyl, aryl or alkoxy chain. 16. A composition of matter, comprising an organic semiconducting molecule having a structure: wherein: each Ar is independently a substituted or non-substituted aromatic functional group, or each Ar is independently nothing and the valence of its respective thiophene ring is completed with hydrogen; X is C, Si, Ge, N or P; Y is O, S, Se or N—R 3 ; Z is O, S, Se, or N—R 3 ; each R 1 , R 2 , and R 3 is independently hydrogen or a substituted or non-substituted alkyl, aryl or alkoxy chain; R 4 is either a hydrogen or the same as Z—R 2 ; and A is an acceptor moiety. 17. The composition of matter of claim 16 , wherein the organic semiconducting molecule has the structure: wherein X is C, Si, Ge, N or P; Y is O, S or Se; Z is O or S. 18. The composition of matter of claim 16 , wherein: the R, R 1 , R 2 , R 3 and/or R 4 each comprise a substituted or non-substituted alkyl, aryl or alkoxy chain including, but not limited to, a C 6 -C 50 substituted or non-substituted alkyl or alkoxy chain, —(CH 2 CH 2 O)n (n=2˜30), C 6 H 5 , —C n F (2n+1) (n=2 ˜50), —(CH 2 ) n N(CH 3 ) 3 Br(n=2˜50), 2-ethylhexyl, PhC m H 2m+1 (m=1-50), —(CH 2 ) n N(C 2 H 5 ) 2 (n=2˜50), —(CH 2 ) n Si(C m H 2m+1 ) 3 (m, n=1 to 50), or —(CH 2 ) n Si(OSi(C m H 2m+1 ) 3 ) x (C p H 2p+1 ) y (m, n, p=1 to 50, x+y=3). 19. The composition of matter of claim 16 , wherein A is a compound of the structure: Y and Z are each independently CH, CF, N, C—CN or C—OR, and X═O, S, Se, or N—R where R is H or a solubilizing chain. 20. The composition of matter of claim 16 , wherein A is a compound of the structure: X 1 and X 2 are each independently O, S, or a malonitrile, Y is one or more halogens, —CN, or any solubilizing chain, and Ar is any aryl unit. 21. The composition of matter of claim 16 , wherein A is a compound of the structure: X 1 , X 2 , and X 3 are each independently a halogen, CN, alkoxy, alkylthio, N—annulated (a ring comprising N), or S— annulated (a ring comprising S), Y 1 , Y 2 , Y 3 , and Y 4 are each independent S or O, and
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