X-ray detector and x-ray device with x-ray detector

Patent metadata

Field	Value
Publication number	US-11226422-B2
Application number	US-202016916686-A
Country	US
Kind code	B2
Filing date	Jun 30, 2020
Priority date	Jul 8, 2019
Publication date	Jan 18, 2022
Grant date	Jan 18, 2022

Abstract

An x-ray detector includes a sensor slice for directly converting x-ray radiation and a downstream read-out chip. Further, in at least one embodiment, a first amplifier stage is interconnected between the sensor slice and read-out chip.

First claim

What is claimed is:

1. An x-ray detector, comprising:
a sensor slice to directly convert x-ray radiation; and
a downstream read-out chip;
a first amplifier stage, connected between the sensor slice and the downstream read-out chip; and
an interposer, connected between the sensor slice and downstream read-out chip, the interposer including a number of layers and the first amplifier stage being embodied by at least one layer of the number of layers.

2. The x-ray detector of claim 1 , wherein the downstream read-out chip includes a second amplifier stage.

3. The x-ray detector of claim 1 , wherein the first amplifier stage is connected between the sensor slice and the interposer.

4. The x-ray detector of claim 3 , wherein a glass interposer is connected as the interposer between the sensor slice and downstream read-out chip and wherein the first amplifier stage is manufactured on the glass interposer via a thin film technology (TFT) methodology.

5. The x-ray detector of claim 1 , wherein the first amplifier stage is a thin film transistor (TFT).

6. The x-ray detector of claim 1 , wherein the interposer is a glass interposer, connected between the sensor slice and downstream read-out chip and wherein the first amplifier stage is manufactured on the glass interposer via thin film transistor (TFT) technology methodology.

7. The x-ray detector of claim 1 , wherein the at least one layer embodying the first amplifier stage is arranged upstream of a redistribution layer.

8. The x-ray detector of claim 1 , wherein the first amplifier stage is realized on a film.

9. The x-ray detector of claim 8 , wherein the first amplifier stage is printed on the film.

10. The x-ray detector of claim 8 , wherein the film is laminated onto the sensor slice or the interposer.

11. The x-ray detector of claim 1 , wherein the first amplifier stage is attached to the sensor slice.

12. The x-ray detector of claim 11 , wherein a conductor board is connected between the first amplifier stage and the downstream read-out chip.

13. The x-ray detector of claim 1 , wherein the first amplifier stage is realized by a semiconductor slice, applied to the sensor slice via epitaxy.

14. An x-ray device, comprising:
an x-ray radiation source; and
the x-ray detector of claim 1 .

15. The x-ray detector of claim 1 , wherein the first amplifier is configured to amplify signals from the sensor slice to provide the detector with amplified signals insensitive to effects of at least one of parasitic capacitance and parasitic resistance.

16. An x-ray detector, comprising:
a sensor slice to directly convert x-ray radiation;
a downstream read-out chip;
an interposer, including a number of layers, connected between the sensor slice and the downstream read-out chip; and
a first amplifier stage, connected between the sensor slice and the interposer, embodied by at least one layer of the number of layers.

17. The x-ray detector of claim 16 , wherein the at least one layer embodying the first amplifier stage is arranged upstream of a redistribution layer.

18. An x-ray device, comprising:
an x-ray radiation source; and
the x-ray detector of claim 16 .

19. The x-ray detector of claim 16 , wherein the first amplifier is configured to amplify signals from the sensor slice to provide the detector with amplified signals insensitive to effects of at least one of parasitic capacitance and parasitic resistance.

Assignees

• Siemens Healthcare Gmbh

Inventors

• Hosemann Michael
• Ergler Thorsten
• Wrege Jan

Classifications

• H04N23/30

  for generating image signals from X-rays · CPC title

• H10F30/29

  the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation · CPC title

• G01T1/17

  Circuit arrangements not adapted to a particular type of detector {(pulse-selection circuits H03K, G01R)} · CPC title

• G01T1/246 Primary

  utilizing latent read-out, e.g. charge stored and read-out later · CPC title

• G01T1/247 Primary

  Detector read-out circuitry (for processing gain or off-set correction H04N) · CPC title