Photonic structures and integrated device for detecting and analyzing molecules

Patent metadata

Field	Value
Publication number	US-11226290-B2
Application number	US-201715611583-A
Country	US
Kind code	B2
Filing date	Jun 1, 2017
Priority date	Jun 1, 2016
Publication date	Jan 18, 2022
Grant date	Jan 18, 2022

Abstract

System and methods for analyzing single molecules and performing nucleic acid sequencing. An integrated device may include multiple pixels with sample wells configured to receive a sample, which when excited, emits radiation. The integrated device includes a surface having a trench region recessed from a portion of the surface and an array of sample wells, disposed in the trench region. The integrated device also includes a waveguide configured to couple excitation energy to at least one sample well in the array and positioned at a first distance from a surface of the trench region and at a second distance from the surface in a region separate from the trench region. The first distance is smaller than the second distance. The system also includes an instrument that interfaces with the integrated device. The instrument may include an excitation energy source for providing excitation energy to the integrated device by coupling to an excitation energy coupling region of the integrated device.

First claim

What is claimed is:

1. An integrated device comprising:
a surface of the integrated device having a trench region recessed from a portion of the surface;
an array of sample wells disposed in the trench region and recessed from a bottom surface of the trench region, wherein a sample well of the array of sample wells is configured to receive a sample; and
a waveguide configured to couple excitation energy to at least one sample well in the array and positioned at a first distance from the bottom surface of the trench region and at a second distance from the surface of the integrated device in a region separate from the trench region, wherein the first distance is smaller than the second distance.

2. The integrated device of claim 1 , wherein the first distance is between 150 nm and 600 nm.

3. The integrated device of claim 1 , wherein the second distance is between 250 nm and 2000 nm.

4. The integrated device of claim 1 , wherein the sample well has a surface at a distance less than 300 nm from the waveguide.

5. The integrated device of claim 1 , wherein the integrated device further comprises at least one grating coupler configured to receive excitation energy from an excitation source separate from the integrated device and to direct excitation energy to the waveguide.

6. The integrated device of claim 5 , wherein the integrated device further comprises a reflector configured to reflect excitation energy towards the at least one grating coupler.

7. The integrated device of claim 5 , wherein the integrated device further comprises a splitter structure configured to receive excitation energy from the at least one grating coupler and direct excitation energy to a plurality of waveguides.

8. The integrated device of claim 7 , wherein the splitter structure includes at least one multi-mode interference splitter.

9. The integrated device of claim 7 , wherein the splitter structure includes a star coupler.

10. The integrated device of claim 7 , wherein the splitter structure includes a sliced grating coupler.

11. The integrated device of claim 1 , wherein the waveguide has a tapered dimension in a direction perpendicular to a direction of light propagation along the waveguide such that the tapered dimension is larger at a location proximate to a grating coupler than at a distal location.

12. The integrated device of claim 1 , wherein the sample well includes a sidewall spacer formed on at least a portion of a sidewall of the sample well.

13. The integrated device of claim 12 , wherein a surface of the sample well proximate to the waveguide is configured to interact with the sample in a different manner than the sidewall spacer.

14. The integrated device of claim 1 , wherein the integrated device further comprises a metal stack formed on the bottom surface of the trench region, such that the metal stack has an opening that overlaps with an aperture of a sample well of the array.

15. The integrated device of claim 14 , wherein the metal stack includes an aluminum layer and a titanium nitride layer, and the aluminum layer is proximate to the waveguide.

16. The integrated device of claim 1 , wherein the waveguide includes silicon nitride.

17. The integrated device of claim 1 , the integrated device further comprises a sensor configured to receive emission energy emitted by the sample located in the sample well.

18. An integrated device comprising:
a substrate having circuitry;
a waveguide having a first side facing the substrate and a second side opposite the first side; and
a plurality of metal layers formed over the substrate and configured to support a plurality of electrical signals, wherein a first metal layer of the plurality of metal layers is positioned at a distance closer to the substrate than the first side of the waveguide, and wherein the waveguide is positioned at a distance closer to the substrate than a second metal layer of the plurality of metal layers.

19. The integrated device of claim 18 , further comprising:
a surface of the integrated device having a trench region recessed from a portion of the surface of the integrated device; and
an array of sample wells, disposed in the trench region, wherein a sample well of the array of sample wells is configured to receive a sample; and
wherein the waveguide is positioned at a first distance from a bottom surface of the trench region and at a second distance from the surface of the integrated device in a region separate from the trench region, wherein the first distance is smaller than the second distance.

20. An integrated device comprising:
a substrate having circuitry;
a waveguide having a first side facing the substrate and a second side opposite the first side;
a plurality of metal layers formed over the substrate and configured to support a plurality of electrical signals, wherein a first metal layer of the plurality of metal layers is positioned at a distance closer to the substrate than the first side of the waveguide;
a surface of the integrated device having a trench region recessed from a portion of the surface of the integrated device; and
an array of sample wells, disposed in the trench region, wherein a sample well of the array of sample wells is configured to receive a sample; and
wherein the waveguide is positioned at a first distance from a bottom surface of the trench region and at a second distance from the surface of the integrated device in a region separate from the trench region, wherein the first distance is smaller than the second distance.

Assignees

• Quantum Si Inc

Inventors

• Rothberg Jonathan M
• Kabiri Ali
• Schmid Gerard
• Fife Keith G
• Beach James
• Sickler Jason W
• West Lawrence C
• Glenn Paul E
• Preston Kyle
• Ghasemi Farshid
• Cipriany Benjamin
• Lackey Jeremy

Classifications

• G01N21/63 Primary

  optically excited · CPC title

• G01N21/25

  Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands · CPC title

• C12Q1/6851

  Quantitative amplification · CPC title

• G01N2021/6421

  Measuring at two or more wavelengths · CPC title

• G01N2021/6419

  Excitation at two or more wavelengths · CPC title