Organic light emitting display panel and method of manufacturing the same
US-9972805-B2 · May 15, 2018 · US
US11223026B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11223026-B2 |
| Application number | US-201815951435-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 12, 2018 |
| Priority date | Oct 31, 2012 |
| Publication date | Jan 11, 2022 |
| Grant date | Jan 11, 2022 |
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An organic light emitting display panel includes a light emitting diode array substrate and an encapsulation substrate adhered to the light emitting array diode substrate by an adhesive film. The light emitting array diode substrate includes a driving thin film transistor formed on a substrate, an organic light emitting diode including a first electrode connected to the driving thin film transistor, an organic emission layer formed on the first electrode, and a second electrode formed on the organic emission layer, and first and second passivation layers formed on the second electrode. In this regard, the first passivation layer is formed of an organic compound having at least one of the structural formulae described in Formula 1 below:wherein R1, R2, R3, R4, R5, and R6 are each independently selected from substituted or unsubstituted C6-C40 aromatic groups.
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The invention claimed is: 1. A device for producing electroluminescence comprising a light emitting diode including: an anode, a cathode; an emissive layer having a hole-related layer, a first organic emitting layer and an electron-related layer disposed between the anode and the cathode, the first organic emitting layer interposed between the hole-related layer and the electron-related layer; a first passivation layer disposed on the cathode; and a second passivation layer on the first passivation layer, wherein the second passivation layer covers the first passivation layer, wherein the emissive layer and the cathode are formed by using a first shadow mask, and the first passivation layer is formed by using a second shadow mask having a wider opening than that of the first shadow mask, and wherein the first passivation layer includes an organic compound having at least one of the chemical structure of Formula 1: wherein R1,R2,R3,R4,R5, and R6 are each independently selected from substituted or unsubstituted C 6 -C 40 aromatic groups. 2. The device for producing electroluminescence according to claim 1 , wherein the first passivation layer is entirely on the emissive layer and the cathode to cover side surfaces of the emissive layer and the cathode. 3. The device for producing electroluminescence according to claim 1 , wherein the organic compound having at least one of the chemical structure of Formula 1 is selected from HM-01 through HM-65: 4. The device for producing electroluminescence according to claim 1 , wherein the first passivation layer is formed of an organic compound having at least one of the structural formulae described in Formula 2 below: <Formula 2> wherein R1,R2,R3,R4,R5, and R6 are each independently selected from substituted or unsubstituted C 6 -C 40 aromatic groups. 5. The device for producing electroluminescence according to claim 4 , wherein the organic compound having at least one of the structural formulae of Formula 2 is selected from the following compounds: 6. The device for producing electroluminescence according to claim 1 , further comprising a driving thin film transistor on a substrate, wherein the driving thin film transistor includes: an active layer having a channel region and source and drain regions on the substrate, a gate insulating layer on the substrate with the active layer, a gate electrode on the gate insulating layer and over the channel region, an interlayer insulating layer on the gate insulating layer with the gate electrode, and source and drain electrodes on the interlayer insulating layer to contact with the source and drain regions. 7. The device for producing electroluminescence according to claim 6 , further comprising a storage capacitor on the substrate, wherein the storage capacitor includes: a lower storage electrode, an upper storage electrode, and the gate insulating layer between the lower storage electrode and the upper storage electrode. 8. The device for producing electroluminescence according to claim 7 , wherein the lower storage electrode, and the source and drain regions are doped with a p+ or n+impurity. 9. The device for producing electroluminescence according to claim 7 , wherein the lower storage electrode is formed of the same layer as the active layer. 10. The device for producing electroluminescence according to claim 7 , wherein the upper storage electrode is formed of the same layer as the gate electrode. 11. The device for producing electroluminescence according to claim 1 , wherein the emissive layer emits phosphorescent radiation, fluorescent radiation or a phosphorescent and fluorescent mixed radiation. 12. The device for producing electroluminescence according to claim 11 , wherein one of the hole-related layer, the first organic emitting layer and the electron-related layer emits phosphorescent radiations, fluorescent radiation or the phosphorescent and fluorescent mixed radiation. 13. The device for producing electroluminescence according to claim 11 , wherein the emissive layer further includes a second organic emitting layer emitting phosphorescent radiation, fluorescent radiation, or the phosphorescent and fluorescent mixed radiation. 14. The device for producing electroluminescence according to claim 1 , wherein the emissive layer includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer. 15. The device for producing electroluminescence according to claim 1 , wherein the first passivation layer and the second passivation layer are formed without a gap therebetween. 16. The device for pro
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