Offset corrected bandgap reference and temperature sensor

Patent metadata

Field	Value
Publication number	US-11221638-B2
Application number	US-201916288226-A
Country	US
Kind code	B2
Filing date	Feb 28, 2019
Priority date	Feb 28, 2019
Publication date	Jan 11, 2022
Grant date	Jan 11, 2022

Abstract

An offset corrected bandgap reference and temperature sensor is disclosed. In a complementary metal-oxide-semiconductor (CMOS) bandgap reference, non-idealities in the operational amplifier (op-amp) bandgap reference circuit can lead to a voltage offset. This operational amplifier offset voltage is the dominant source of error in the bandgap reference. If the bandgap reference is used in a temperature sensor, it only needs to be accurate during the analog-to-digital conversion cycle. Embodiments of the present disclosure employ switched capacitors to store the operational amplifier offset during a sample mode in which the bandgap reference operates continuous-time. The operational amplifier offset is then corrected during a hold mode while the temperature sensor completes the analog-to-digital conversion.

First claim

What is claimed is:

1. A temperature sensor, comprising:
an analog-to-digital converter (ADC) having a first input coupled to a proportional to absolute temperature voltage and a second input coupled to a bandgap reference voltage, wherein the ADC is configured to output a digital temperature signal;
a bandgap reference circuit comprising:
an output transistor coupled between a reference voltage and the bandgap reference voltage;
a first operational amplifier having an output coupled to a gate of the output transistor; and
a first capacitor coupled to a first input of the first operational amplifier, wherein during a hold mode the first capacitor corrects the bandgap reference voltage for an offset of the first operational amplifier;

a reference transistor coupled between the second input of the ADC and a ground voltage; and
a second operational amplifier having an output coupled to a gate of the reference transistor and a non-inverting input coupled to the bandgap reference voltage.

2. The temperature sensor of claim 1 , wherein:
the bandgap reference circuit further comprises a second capacitor matched to the first capacitor; and
during a sample mode the first capacitor is coupled in parallel with an operational amplifier input voltage of the first operational amplifier.

3. The temperature sensor of claim 2 , wherein during the sample mode the second capacitor is bypassed.

4. The temperature sensor of claim 3 , wherein the bandgap reference circuit further comprises a voltage divider network coupled between the bandgap reference voltage and the ground voltage, the voltage divider network comprising:
a first branch comprising a first resistor and a first semiconductor junction; and
a second branch parallel to the first branch and comprising a second resistor, a third resistor, and a second semiconductor junction.

5. The temperature sensor of claim 4 , wherein during the hold mode the second capacitor is coupled between a non-inverting input of the first operational amplifier and a first node between the first resistor and the first semiconductor junction.

6. The temperature sensor of claim 5 , wherein during the hold mode the first capacitor is coupled between an inverting input of the first operational amplifier and a second node between the second resistor and the third resistor.

7. A temperature sensor, comprising:
an analog-to-digital converter (ADC) having a voltage input coupled to a proportional to absolute temperature voltage, a positive differential input, and a negative differential input, wherein the ADC is configured to output a digital temperature signal;
a resistor ladder coupled between a bandgap reference voltage, the positive differential input of the ADC, and the negative differential input of the ADC; and
a bandgap reference circuit comprising:
an output transistor coupled between a reference voltage and the bandgap reference voltage;
a first operational amplifier having an output coupled to a gate of the output transistor; and
a first capacitor coupled to a first input of the first operational amplifier, wherein during a hold mode the first capacitor corrects the bandgap reference voltage for an offset of the first operational amplifier.

8. The temperature sensor of claim 7 , further comprising:
a reference transistor coupled between the voltage input of the ADC and the reference voltage; and
a second operational amplifier having an output coupled to a gate of the reference transistor and a non-inverting input coupled to the proportional to absolute temperature voltage.

9. The temperature sensor of claim 7 , wherein:
the bandgap reference circuit further comprises a second operational amplifier having an output coupled to the voltage input of the ADC; and
during a sample mode:
an inverting input of the second operational amplifier is coupled to the bandgap reference voltage; and
a non-inverting input of the second operational amplifier is coupled to a common mode voltage.

10. The temperature sensor of claim 9 , wherein during the hold mode a charging capacitor is coupled between the non-inverting input of the second operational amplifier and a ground voltage.

11. The temperature sensor of claim 7 , wherein:
the output transistor is a first output transistor;
the output of the first operational amplifier is further coupled to a gate of a second output transistor; and
the proportional to absolute temperature voltage and the bandgap reference voltage are derived from a first differential voltage coupled to the first output transistor and a second differential voltage coupled to the second output transistor.

12. The temperature sensor of claim 11 , wherein the bandgap reference circuit further comprises a voltage divider network coupled between the reference voltage and a ground voltage, the voltage divider network comprising:
a first branch comprising the first output transistor and a first semiconductor junction; and
a second branch parallel to the first branch and comprising a first resistor and a second semiconductor junction.

13. The temperature sensor of claim 12 , wherein during the hold mode:
a second capacitor is coupled between a non-inverting input of the first operational amplifier and the first output transistor; and
the first capacitor is coupled between an inverting input of the first operational amplifier and a second node between the second output transistor and the first resistor.

14. The temperature sensor of claim 11 , wherein:
an input of the ADC is coupled to an output of a second operational amplifier; and
during the hold mode an inverting input of the second operational amplifier is coupled to the output of the second operational amplifier and the second differential voltage.

15. A temperature sensor, comprising:
an analog-to-digital converter (ADC) configured to output a digital temperature signal from a proportional to absolute temperature voltage and a bandgap reference voltage, wherein the proportional to absolute temperature voltage and the bandgap reference voltage are derived from a first differential voltage and a second differential voltage;
a bandgap reference circuit comprising:
a first output transistor coupled to the first differential voltage and coupled between a reference voltage and the bandgap reference voltage;
a second output transistor coupled to the second differential voltage;
a first operational amplifier having an output coupled to a gate of the first output transistor and a gate of the second output transistor; and
a first capacitor coupled to a first input of the first operational amplifier, wherein during a hold mode the first capacitor corrects the bandgap reference voltage for an offset of the first operational amplifier; and

a second operational amplifier having an output coupled to an input of the ADC, wherein during the hold mode an inverting input of the second operational amplifier is coupled to the output of the second operational amplifier and the second differential voltage.

16. The temperature sensor of claim 15 , wherein:
the bandgap reference circuit further comprises a second capacitor matched to the first capacitor;
during a sample mode the first capacitor is coupled in parallel with an operational amplifier input voltage of the first operational amplifier; and
during the sample mode the second capacitor is bypassed.

17. The temperature sensor of claim 16 , wherein the bandgap reference circuit further comprises a voltage divider network coupled between the bandgap reference voltage and a ground voltage, the voltage divider ne

Assignees

• Qorvo Us Inc

Inventors

• Tesch Bruce John

Classifications

• H03M1/12

  Analogue/digital converters ({H03M1/001 – } H03M1/10 take precedence) · CPC title

• G01K7/01 Primary

  using semiconducting elements having PN junctions (G01K7/02, G01K7/16, G01K7/30 take precedence) · CPC title

• G01K2219/00

  Thermometers with dedicated analog to digital converters · CPC title

• G05F3/30

  Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities (G05F3/26 takes precedence) · CPC title

• G05F1/575 Primary

  characterised by the feedback circuit · CPC title