Bottom antireflective coating forming composition

Patent metadata

Field	Value
Publication number	US-11221558-B2
Application number	US-201716324299-A
Country	US
Kind code	B2
Filing date	Aug 2, 2017
Priority date	Aug 9, 2016
Publication date	Jan 11, 2022
Grant date	Jan 11, 2022

Abstract

[Problem to be Solved] To provide a bottom antireflective coating forming composition which can show high etching resistance and can be crosslinked even at a relatively low temperature. Further, to provide a resist pattern manufacturing method and a device manufacturing method using the same. [Solution] The bottom antireflective coating forming composition comprises: a polymer A comprising specific repeating units; a low molecular crosslinking agent having a molecular weight of 100 to 3,000; and a solvent. The resist pattern manufacturing method and the device manufacturing method using the same are also provided.

First claim

The invention claimed is:

1. A bottom antireflective coating forming composition, comprising:
a polymer A consisting of a repeating unit represented by formula (I) and a repeating unit represented by formula (II):

wherein
R 1 is hydrogen, C 1-6 alkyl, halogen, or cyano,
R 2 is C 1-6 alkyl, hydroxy, halogen, or cyano,
p is 0, 1, 2, 3, or 4,
R 3 is hydrogen, C 1-6 alkyl, halogen, or cyano,
R 4 is C 1-6 alkyl, halogen, or cyano, and
q is 0, 1, 2, 3, 4, or 5;

a polymer B comprising a repeating unit comprising an aromatic hydrocarbon ring in the main chain or the side chain,
wherein the repeating unit of the polymer B is represented by formula (III), formula (IV), or formula (V):

wherein
Ar 1 is a direct bond, C 1-6 alkyl, or C 6-12 aryl,
Ar 2 is C 6-12 aryl,
R 5 and R 6 are each independently C 1-6 alkyl, hydroxy, halogen, or cyano,
r and s are each independently 0, 1, 2, 3, 4, or 5,
at least one of the C 1 , C 2 , and C 3 rings each surrounded by the broken line is an aromatic hydrocarbon ring fused with the adjacent aromatic hydrocarbon ring P 1 , otherwise the C 1 , C 2 , and C 3 ring(s) is not present and
at least one of the C 4 , C 5 , and C 6 rings each surrounded by the broken line is an aromatic hydrocarbon ring fused with the adjacent aromatic hydrocarbon ring P 2 , otherwise the C 4 C 5 or C 6 ring(s) is not present:

wherein
X is a direct bond or C 1-6 alkyl,
R 7 , R 8 , and R 9 are each independently hydrogen, C 1-6 alkyl, halogen, or cyano,
R 10 is C 1-6 alkyl, hydroxy, halogen, or cyano, and
t is 0, 1, 2, 3, 4 or 5;

wherein
Ar 3 is unsubstituted or substituted C 6-14 aryl, the substituent being C 1-6 alkyl, hydroxyl, or carboxyl,
Ar 4 is unsubstituted or substituted C 6-14 aryl, the substituent being C 1-6 alkyl, hydroxyl, or carboxyl,
L 1 and L 2 are each independently a direct bond or C 1-6 alkyl;
a low molecular crosslinking agent having a molecular weight of 100 to 3,000; and
a solvent
provided that the content of polymer B in the composition is 1 to 175% by mass relative to the mass of polymer A.

2. The bottom antireflective coating forming composition according to claim 1 , wherein R 1 is hydrogen, R 2 is methyl or hydroxy, p is 0 or 1, R 3 is hydrogen, R 4 is methyl, and q is 0 or 1.

3. The bottom antireflective coating forming composition according to claim 2 , wherein in all the repeating units in the polymer A, the ratio of the repeating unit represented by formula (I) is 70 to 95 mol %, and the ratio of the repeating unit represented by formula (II) is 5 to 30 mol %.

4. The bottom antireflective coating forming composition according to claim 3 , wherein the molecular weight of the low molecular crosslinking agent is 300 to 1,000.

5. The bottom antireflective coating forming composition according to claim 4 , wherein the solvent comprises ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, propylene glycol, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol propyl ether acetate, toluene, xylene, methyl ethyl ketone, cyclopentanone, cyclohexanone, ethyl 2-hydroxypropionate, ethyl 2-hydroxy-2-methylpropionate, ethyl ethoxyacetate, ethyl hydroxyacetate, methyl 2-hydroxy-3-methylbutanoate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, ethyl 3-ethoxypropionate, methyl 3-ethoxypropionate, methyl pyruvate, ethyl pyruvate, ethyl acetate, butyl acetate, ethyl lactate, butyl lactate, N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, or a mixture thereof.

6. The bottom antireflective coating forming composition according to claim 5 , wherein the composition further comprises a surfactant.

7. The bottom antireflective coating forming composition according to claim 1 , wherein in all the repeating units in the polymer A, the ratio of the repeating unit represented by formula (I) is 70 to 95 mol %, and the ratio of the repeating unit represented by formula (II) is 5 to 30 mol %.

8. The bottom antireflective coating forming composition according to claim 1 , wherein the molecular weight of the low molecular crosslinking agent is 300 to 1,000.

9. The bottom antireflective coating forming composition according to claim 1 , wherein the solvent comprises ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, propylene glycol, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol propyl ether acetate, toluene, xylene, methyl ethyl ketone, cyclopentanone, cyclohexanone, ethyl 2-hydroxypropionate, ethyl 2-hydroxy-2-methylpropionate, ethyl ethoxyacetate, ethyl hydroxyacetate, methyl 2-hydroxy-3-methylbutanoate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, ethyl 3-ethoxypropionate, methyl 3-ethoxypropionate, methyl pyruvate, ethyl pyruvate, ethyl acetate, butyl acetate, ethyl lactate, butyl lactate, N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, or a mixture thereof.

10. The bottom antireflective coating forming composition according to claim 1 , wherein the composition further comprises a surfactant.

11. A resist pattern manufacturing method, comprising:
forming, on a substrate, a bottom antireflective coating from a bottom antireflective coating forming composition according to claim 1 ;
forming a photoresist coating on the bottom antireflective coating; and
exposing and developing the photoresist coating to form a resist pattern.

12. A semiconductor device manufacturing method, comprising:
forming, on a substrate, a bottom antireflective coating from a bottom antireflective coating forming composition according to claim 1 ;
forming a photoresist coating on the bottom antireflective coating;
exposing and developing the photoresist coating to form a resist pattern; and
forming a gap in the substrate or a layer on the substrate using the resist pattern as a mask.

13. The semiconductor device manufacturing method according to claim 12 , wherein after forming the gap, the method further comprises contacting the resist pattern with water, a liquid mixture of a water-soluble organic solvent and water, or an alkali aqueous solution to thereby remove the resist pattern.

14. The semiconductor device manufacturing method according to claim 12 , wherein the method further comprises forming wiring in the gap.

15. The bottom antireflective coating forming composition according to 15, wherein the low molecular crosslinking agent is represented by formula (VI);

L 3 is a direct bond or substituted or unsubstituted C 1-3 alkyl;
the substituent is hydrogen, methyl, C 6-10 aryl, formula (VII), or formula (VIII),

R 11 is hydrogen

Assignees

• Az Electronic Mat Luxembourg Sarl
• Merck Patent Gmbh

Inventors

• HITOKAWA Hiroshi
• Takaichi Tetsumasa
• Kawato Shunji
• Katayama Tomohide

Classifications

• G03F7/091 Primary

  characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement · CPC title

• G03F7/26

  Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) · CPC title

• C09D133/14

  of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen · CPC title

• G03F7/30

  Imagewise removal using liquid means · CPC title

• C09D125/18

  Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen · CPC title