In-situ growth of quantum dots and nano-crystals from one, two, or three dimensional material

Patent metadata

Field	Value
Publication number	US-11217760-B2
Application number	US-202016901245-A
Country	US
Kind code	B2
Filing date	Jun 15, 2020
Priority date	Jul 1, 2019
Publication date	Jan 4, 2022
Grant date	Jan 4, 2022

Abstract

Techniques for growing, at least one of: (a) quantum dots and (b) nano-crystals, on a surface of a material are provided. One method comprises placing a precursor on the surface; adding an antisolvent to the precursor; and growing at least one of the quantum dots and the nanocrystals on the surface.

First claim

What is claimed is:

1. A method of growing, at least one of: (a) quantum dots and (b) nano-crystals, on a surface of a material, the method comprising:
placing a precursor on the surface;
adding an antisolvent to the precursor; and
growing, from the surface of the material, the at least one of quantum dots and nano-crystals.

2. The method of claim 1 , further comprising activating the surface of the material to create additional defect sites on the surface of the material.

3. The method of claim 2 , wherein activating the surface comprises performing dry or wet etching of the surface.

4. The method of claim 1 , further comprising removing remaining precursor.

5. The method of claim 1 , wherein the at least one of: (a) quantum dots and (b) nano-crystals are separated from the surface of the material by a minimum distance.

6. The method of claim 5 , wherein the minimum distance is less than 0.5 nm.

7. The method of claim 1 , wherein the at least one of: (a) quantum dots and (b) nano-crystals consists of perovskite quantum dots; and
wherein the precursor is a perovskite precursor.

8. The method of claim 1 , wherein the material comprises graphene, carbon nanotubes, or at least one doped semiconductor.

9. The method of claim 1 , wherein carrier mobility of the material is higher than carrier mobility of the at least one of: (a) quantum dots and (b) nano-crystals.

10. The method of claim 1 , wherein the antisolvent comprises at least one of toluene, diethyl ether, chlorobenzene, and chloroform.

11. The method of claim 1 , wherein the at least one quantum dot and/or nano-crystal is grown from a defect site on the surface of the material.

Assignees

• Univ Central Florida Res Found Inc

Inventors

• Thomas Jayan
• Pradhan Basudev
• Chowdhury Farzana

Classifications

• H10P14/271

  characterised by the preparation of substrate for selective deposition · CPC title

• H10P14/265

  using solutions · CPC title

• H10P14/3402

  characterised by the chemical composition · CPC title

• H10K10/43

  Bipolar transistors, e.g. organic bipolar junction transistors [OBJT] · CPC title

• H10K30/10

  comprising heterojunctions between organic semiconductors and inorganic semiconductors · CPC title