Power semiconductor device, method for manufacturing power semiconductor device, and power conversion device

Patent metadata

Field	Value
Publication number	US-11217514-B2
Application number	US-201916982663-A
Country	US
Kind code	B2
Filing date	Apr 19, 2019
Priority date	May 9, 2018
Publication date	Jan 4, 2022
Grant date	Jan 4, 2022

Abstract

In a power semiconductor device, power semiconductor elements are mounted on a large die pad and the like. The large die pad is joined to a power lead via a lead stepped portion. The large die pad has a first end portion and a second end portion located with a distance therebetween in the X axis direction. In the Y axis direction, the lead stepped portion is joined to the first end portion side relative to a central line between the first end portion and the second end portion. The large die pad is inclined such that a distance between the large die pad and the first main surface of the molding resin is longer from the first end portion toward the second end portion.

First claim

The invention claimed is:

1. A power semiconductor device comprising:
a lead terminal;
a first die pad;
a first semiconductor element mounted on the first die pad;
a first hanging lead connected to the first die pad and joined to the lead terminal; and
a sealing material to seal the first die pad, the first semiconductor element, and the first hanging lead so as to expose a portion of the lead terminal, wherein
the first die pad has a first end portion and a second end portion located with a first distance between the first end portion and the second end portion in a first direction,
in a second direction crossing the first direction, the first hanging lead is connected to the first die pad on the first end portion side relative to a center between the first end portion and the second end portion in the first die pad,
the first die pad is disposed on a side on which a first main surface of the sealing material is located relative to a first location in a third direction, the first main surface covering a side of the first die pad opposite to a side of the first die pad on which the first semiconductor element is mounted, the third direction crossing the first direction and the second direction, the first location being a location at which the lead terminal is located, and
the first die pad is inclined such that a thickness of the sealing material from a portion of the sealing material on the side of the first die pad opposite to the side of the first die pad on which the first semiconductor element is mounted to the first main surface is thicker from the first end portion side of the first die pad toward the second end portion side of the first die pad,
the power semiconductor device further comprising:
a second die pad;
a second semiconductor element mounted on the second die pad; and
a second hanging lead connected to the second die pad and joined to the lead terminal, wherein ‘the second die pad has a third end portion and a fourth end portion located with a second distance between the third end portion and the fourth end portion in the first direction,
in the second direction, the second hanging lead is connected to the second die pad on the third end portion side relative to a center between the third end portion and the fourth end portion in the second die pad,
the second die pad is disposed on a side on which the first main surface of the sealing material is located relative to the first location in the third direction, the first main surface covering a side of the second die pad opposite to a side of the second die pad on which the second semiconductor element is mounted, the first location being a location at which the lead terminal is located,
the second die pad is inclined such that a thickness of the sealing material from a portion of the sealing material on the side of the second die pad opposite to the side of the second die pad on which the second semiconductor element is mounted to the first main surface is thicker from the third end portion side of the second die pad toward the fourth end portion side of the second die pad,
the first die pad has a first width in the first direction,
the second die pad has a second width in the first direction, the second width being shorter than the first width,
the sealing material includes a first side portion and a second side portion facing each other with a third distance between the first side portion and the second side portion in the first direction, the third distance being longer than the first distance,
the first die pad is disposed on the first side portion side, and
the second die pad is disposed on the second side portion side relative to the first die pad.

2. The power semiconductor device according to claim 1 , comprising a first protruding lead that protrudes from the lead terminal in the second direction at the first location at which the lead terminal is located, wherein
the first protruding lead is disposed on the first end portion side of the first die pad relative to the first hanging lead.

3. The power semiconductor device according to claim 1 , wherein the first die pad is inclined such that the thickness of the sealing material from the portion of the sealing material on the side of the first die pad opposite to the side of the first die pad on which the first semiconductor element is mounted to the first main surface of the sealing material is thicker toward a side further away in the second direction from a side on which the first die pad is connected to the first hanging lead.

4. The power semiconductor device according to claim 1 , wherein
the second die pad includes a bent portion bent to have a first direction component extending in the first direction, and a second direction component extending in the second direction, and
the bent portion is connected to the second hanging lead.

5. The power semiconductor device according to claim 1 , comprising a second protruding lead that protrudes from the lead terminal in the second direction at the first location at which the lead terminal is located, wherein
the second protruding lead is disposed on the third end portion side of the second die pad relative to the second hanging lead.

6. The power semiconductor device according to claim 1 , wherein the second die pad is inclined such that the thickness of the sealing material from the portion of the sealing material on the side of the second die pad opposite to the side of the second die pad on which the second semiconductor element is mounted to the first main surface of the sealing material is thicker toward a side further away in the second direction from a side on which the second die pad is connected to the second hanging lead.

7. The power semiconductor device according to claim 1 , comprising:
a third die pad; and
a third semiconductor element mounted on the third die pad, wherein
the sealing material includes
a third side portion and a fourth side portion facing each other with a fourth distance between the third side portion and the fourth side portion in the second direction, and
a second main surface facing the first main surface,

the first die pad is disposed along the third side portion,
the third die pad is disposed along the fourth side portion, and
the third die pad is disposed on the second main surface side relative to the first die pad.

8. The power semiconductor device according to claim 1 , wherein a tapered portion is provided at each of end portions of the first die pad and the second die pad facing each other.

9. The power semiconductor device according to claim 1 , wherein a curved portion is provided at each of end portions of the first die pad and the second die pad facing each other.

10. A method for manufacturing a power semiconductor device, the method comprising:
forming a lead frame;
mounting a first semiconductor element on the lead frame;
disposing the lead frame in a mold such that a side of the lead frame on which the first semiconductor element is mounted orients upward, the mold being provided with a lower mold, an upper mold, and a sealing material introduction opening;
introducing a sealing material from the sealing material introduction opening into the mold; and
removing the mold, wherein
the forming of the lead frame includes
forming a lead terminal, a first die pad, and a first hanging lead,
the first die pad having a first end portion and a second end portion located with a first distance between the first end portion and the second end portion in a first direction, the first semiconductor element being mounted on the first die pad,
in a second direction crossing the first direction, the first hanging lead being connected to the first die pad on the

Assignees

• Mitsubishi Electric Corp

Inventors

• Iwai Takamasa
• Sudo Shingo
• Suzuki Yuichiro

Classifications

• H10W90/811

  Multiple chips on leadframes · CPC title

• H10W74/111

  the semiconductor body being completely enclosed · CPC title

• H10W74/016 Primary

  using moulds · CPC title

• H10W70/481

  for devices being provided for in groups H10D8/00 - H10D48/00 · CPC title

• H10W70/465

  Bumps or wires · CPC title