Substrate processing device and substrate processing method for carrying out chemical treatment for substrate

Patent metadata

Field	Value
Publication number	US-11217452-B2
Application number	US-202016899472-A
Country	US
Kind code	B2
Filing date	Jun 11, 2020
Priority date	Aug 17, 2012
Publication date	Jan 4, 2022
Grant date	Jan 4, 2022

Abstract

It is an object to carry out a chemical treatment for a peripheral edge part of a substrate while suppressing an amount of consumption of a processing liquid and a time required for processing. In order to achieve the object, a substrate processing device injects heating steam to a peripheral edge part of a substrate to heat the peripheral edge part when carrying out a chemical treatment for the peripheral edge part of the substrate while rotating the substrate in a substantially horizontal posture. Moreover, the substrate processing device injects a gas from above the substrate toward a predetermined injection target region defined within a range surrounded by a rotating track of the peripheral edge part of the substrate in an upper surface of the substrate, thereby generating, on the substrate, a gas flow which flows from the injection target region toward the peripheral edge part of the substrate.

First claim

What is claimed is:

1. A substrate processing method for carrying out a chemical treatment for a substrate by using a processing liquid having a reaction rate that increases with a rise in temperature, the method comprising:
a rotating step including holding a substrate having a peripheral edge part in a substantially horizontal posture and rotating the substrate in a substantially horizontal plane around a rotation axis;
a heating step including heating the peripheral edge part at a plurality of different positions in a rotating track of said peripheral edge part of said substrate during said rotating step; and
a peripheral edge processing step including supplying a processing liquid from above to said peripheral edge part, to a location on said peripheral edge part which enables said processing liquid to be heated in said heating step, thereby carrying out a chemical treatment of said peripheral edge part,
wherein said heating step includes supplying a heated fluid to a target region defined partially at said rotating track, said target region corresponding to at least one of said different positions,
wherein said heated fluid is made of a material having no chemical reactivity to substances present in said peripheral edge part of said substrate, and wherein a portion of said target region overlaps said rotating track, and wherein a remaining portion of said target region protrudes from said substrate.

2. The substrate processing method according to claim 1 , wherein
said peripheral edge part of said substrate is spatially exposed to a part of said heated fluid.

3. The substrate processing method according to claim 2 , wherein said heating step injects water vapor as said heated fluid.

4. The substrate processing method according to claim 3 , wherein said water vapor is superheated water vapor.

5. The substrate processing method according to claim 3 , wherein said heating step injects said water vapor to said peripheral edge part along an injection path in an obliquely downward direction having a direction of flow away said rotation axis.

6. The substrate processing method according to claim 3 , further comprising a gas injecting step of injecting a gas from above said substrate toward a predetermined injection target region defined within a range surrounded by said rotating track of said peripheral edge part of said substrate in an upper surface of said substrate, to generate, on the substrate, a gas flow which flows from said injection target region away from said rotation axis.

7. The substrate processing method according to claim 1 , wherein said heating step supplies a heating water vapor as said heated fluid to heat said peripheral edge part.

8. A substrate processing method for carrying out a chemical treatment for a substrate by using a processing liquid having a reaction rate that increases with a rise in temperature, the method comprising:
a rotating step including holding a substrate in a substantially horizontal posture and rotating the substrate in a substantially horizontal plane around a rotation axis;
a heating step including using a plurality of heating portions that eject heated water vapor to heat a peripheral edge part of the substrate at a plurality of different positions in a rotating track of said peripheral edge part of said substrate during said rotating step; and
a peripheral edge processing step including supplying a processing liquid from above to said peripheral edge part and heating the processing liquid with said heating portions during said heating step, thereby carrying out a chemical treatment of said peripheral edge part, and further comprising
a providing step including providing a plurality of gas injecting portions respectively corresponding to the plurality of heating portions;
a holding step including integrally holding a first of said heating portions that ejects a first heating water vapor and a first of said gas injecting portions by a first arm that allows position-adjusting, and integrally holding a second of said heating portions that eject a second heating water vapor and a second of gas injecting portions by a second arm that allows position-adjusting, said first and second gas injecting portions respectively corresponding to said first and second heating water vapors, said second heating water vapor being different from said first heating water vapor, said second gas injecting portion being different from said first gas injecting portion, and said second arm being different from said first arm;
an opposing injection step including injecting from said first and second gas injection portions a gas directed from above at said substrate and at opposing locations on said peripheral edge part of said substrate in an upper surface of said substrate; and
a gas flow generation step including applying said gas to said opposing locations toward said peripheral edge part of said substrate, wherein said opposing locations are radially closer to said rotation axis that said heating portions.

9. The substrate processing method according to claim 8 , wherein each of said plurality of gas injecting portions injects said gas along an injection path in an obliquely downward direction having a direction of flow away from said rotation axis.

Assignees

• Screen Holdings Co Ltd

Inventors

• Izumoto Kenji
• Shibayama Nobuyuki

Classifications

• H10P50/667

  by liquid etching only · CPC title

• H10P72/0426

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P70/56

  Cleaning of wafer backside · CPC title