Chemical vapor deposition reactor to grow diamond film by microwave plasma chemical vapor deposition

Patent metadata

Field	Value
Publication number	US-11214871-B2
Application number	US-201916387042-A
Country	US
Kind code	B2
Filing date	Apr 17, 2019
Priority date	Mar 7, 2016
Publication date	Jan 4, 2022
Grant date	Jan 4, 2022

Abstract

A chemical vapor deposition (CVD) reactor includes a resonating cavity configured to receive microwaves. A microwave transparent window positioned in the resonating cavity separates the resonating cavity into an upper zone and a plasma zone. Microwaves entering the upper zone propagate through the microwave transparent window into the plasma zone. A substrate is disposed proximate a bottom of the plasma zone opposite the microwave transparent window. A ring structure, positioned around a perimeter of the substrate in the plasma zone, includes a lower section that extends from the bottom of the resonating cavity toward the microwave transparent window and an upper section on a side of the lower section opposite the bottom of the resonating cavity. The upper section extends radially toward a central axis of the ring structure. An as-grown diamond film on the substrate is also disclosed.

First claim

The invention claimed is:

1. A chemical vapor deposition (CVD) reactor comprising:
a microwave resonating cavity configured to receive microwaves and sized to resonate said microwaves;
a microwave transparent window disposed in the resonating cavity separating the resonating cavity into an upper zone and a plasma zone, wherein the resonating cavity is configured to propagate microwaves entering the upper zone through the microwave transparent window into the plasma zone;
a substrate disposed proximate a bottom of the plasma zone opposite the microwave transparent window;
a ring structure disposed around a perimeter of the substrate in the plasma zone, the ring structure including a lower section that extends from the bottom of the resonating cavity toward the microwave transparent window and an upper section on a side of the lower section opposite the bottom of the resonating cavity, the upper section extending radially toward a central axis of the ring structure to an upper section inner diameter, wherein the lower section has an inner surface at a lower section inner diameter and an outer surface at a lower section outer diameter and the upper section inner diameter is less than the lower section inner diameter; and
a plurality of holes or slots, each of the plurality of holes or slots extending between the inner surface and the outer surface.

2. The CVD reactor of claim 1 , wherein:
the substrate and ring structure are positioned coaxially in the plasma zone; and
the upper section of the ring structure has an inner diameter that is ⅝λ to ¾λ, wherein “λ” is a wavelength of the frequency of the microwaves with which the microwave resonating cavity is sized for use.

3. The CVD reactor of claim 2 , wherein the substrate has an outer diameter that is ¾λ to ⅞λ.

4. The CVD reactor of claim 2 , wherein for frequencies of microwaves of 2.45 GHz, 915 MHz, and 433 MHz, λ=122.4 mm, 328 mm, and 693 mm, respectively.

5. The CVD reactor of claim 1 , wherein:
the substrate includes a top surface that faces the microwave transparent window; and
the upper section of the ring structure is positioned in the plasma zone at a height that is between the top surface of the substrate and the microwave transparent window.

6. The CVD reactor of claim 1 , wherein the upper section of the ring structure is positioned ≥ 3/16λ away from the bottom of the microwave resonating cavity, wherein “λ” is a wavelength of the frequency of the microwaves with which the microwave resonating cavity is sized for use.

7. The CVD reactor of claim 1 , further including the upper section of the ring structure including a channel in fluid communication with a fluid source that is operative for supplying a fluid to the channel.

8. The CVD reactor of claim 7 , further including the lower section of the ring structure including a first port for supplying the fluid received from the fluid source to the channel and a second port for exhausting from the channel the fluid introduced into the channel via the first port.

9. The CVD reactor of claim 7 , wherein:
the lower section of the ring structure includes a port for supplying gaseous fluid received from the fluid source to the channel; and
the upper section includes a plurality of gas outlet ports for exhausting the fluid introduced into the channel via the first port to a space surrounding the substrate, along a top surface of the substrate, or both.

10. The CVD reactor of claim 1 , wherein one or more hole or slot extends between the upper section of the ring structure and a bottom of the lower section of the ring structure.

11. The CVD reactor of claim 10 , wherein one ore more hole or slot is open at the bottom of the lower section of the ring structure.

12. The CVD reactor of claim 1 , further including a coaxial waveguide configured to feed the microwaves from a microwave source into the upper chamber, wherein the coaxial waveguide includes a center conductor that extends into the upper zone, wherein an end of the center conductor in the upper zone is coupled to the microwave transparent window.

13. The CVD reactor of claim 12 , further including an antenna, wherein the end of the center conductor in the upper zone is coupled to the microwave transparent window via the antenna.

14. The CVD reactor of claim 13 , wherein the antenna is disposed in an opening in the microwave transparent window.

15. The CVD reactor of claim 1 , wherein:
the ring structure includes a base section between a perimeter of the substrate and the lower section of the ring structure proximate the bottom of the microwave resonating chamber; and
the base section is integral with the lower section of the ring structure and spaced from the perimeter of the substrate.

16. The CVD reactor of claim 15 , wherein a surface of the substrate facing the microwave transparent window is concave.

17. The CVD reactor of claim 16 , wherein a surface of the base section facing the microwave transparent window continues the concavity of the surface of the substrate facing the microwave transparent window.

18. The CVD reactor of claim 1 , wherein:
the ring structure includes a base section integral with the lower section of the ring structure; and
the base section includes a plurality of recesses configured to receive a like plurality of substrates.

19. The CVD reactor of claim 18 , wherein, in cross-section, the ring structure has a “ ” shape.

20. The CVD reactor of claim 1 , including means for introducing a cooling or purge gas into the plasma zone proximate a perimeter of the substrate.

21. The CVD reactor of claim 20 , wherein the means for introducing the cooling or purge gas includes one or more gas ports disposed in the bottom of the plasma zone.

22. The CVD reactor of claim 1 , wherein the substrate is spaced from the bottom of the microwave resonating cavity.

23. The CVD reactor of claim 1 , wherein, in cross-section, one side of the ring structure has an inverted “L” shape.

24. The CVD reactor of claim 1 , wherein the microwaves have a wavelength greater than or equal to about 122.4 mm to less than or equal to about 693 mm.

25. The CVD reactor of claim 24 , wherein the microwaves have a wavelength of at least one of about 122.4 mm, about 328 mm, and about 693 mm.

26. The CVD reactor of claim 1 , wherein each of the plurality of holes or slots extend from the inner surface to the outer surface.

27. The CVD reactor of claim 1 , wherein the lower section extends from the bottom of the resonating cavity toward the microwave transparent window to a height higher than the substrate.

28. The CVD reactor of claim 27 , wherein the height is about ⅛λ, wherein “λ” is a wavelength of the frequency of the microwaves with which the microwave resonating cavity is sized for use.

29. A chemical vapor deposition (CVD) reactor comprising:
a resonating cavity configured to receive microwaves;
a microwave transparent window disposed in the resonating cavity separating the resonating cavity into an upper zone and a plasma zone, wherein the resonating cavity is configured to propagate microwaves entering the upper zone through the microwave transparent window into the plasma zone;
a substrate disposed proximate a bottom of the plasma zone opposite the microwave transparent window; and
a ring structure disposed around a perimeter of the substrate in the plasma zone, the

Assignees

• Ii Vi Delaware Inc

Inventors

• Sabens David
• Tanner Charles D
• Eissler Elgin E

Classifications

• H01J37/32238

  Windows · CPC title

• H01J37/32192

  Microwave generated discharge (H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence) · CPC title

• C30B29/04

  Diamond · CPC title

• C23C16/45504

  Laminar flow · CPC title

• C30B35/00

  Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure · CPC title