Organic light emitting device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-11211576-B2
Application number	US-202016777549-A
Country	US
Kind code	B2
Filing date	Jan 30, 2020
Priority date	Jun 1, 2016
Publication date	Dec 28, 2021
Grant date	Dec 28, 2021

Abstract

An organic light-emitting device including an anode electrode, a hole injection layer on the anode electrode, a hole transport layer on the hole injection layer, an emissive layer on the hole transport layer, and a cathode electrode on the emissive layer. A material of the hole injection layer includes a nitrogen-containing compound having a quinoid structure and a nitrogen-containing compound having a benzenoid structure. A ratio of a peak intensity IB to a peak intensity IA (IB/IA) in a Fourier transform infrared spectroscopy (FTIR) spectrum of the material of the hole injection layer ranges from 1.5 to 2.5, the peak intensity IA and the peak intensity IB being further defined.

First claim

What is claimed is:

1. A method of manufacturing an organic light-emitting device, the method comprising:
preparing an anode electrode;
forming a hole injection layer on the anode electrode by providing a hole injection material on the anode electrode and baking the hole injection material to form the hole injection layer;
forming a hole transport layer on the hole injection layer by providing a hole transport material on the hole injection layer and baking the hole transport material to form the hole transport layer; and
forming an emissive layer on the hole transport layer,
wherein baking the hole injection material includes:
a first interval in which a conductivity of the hole injection material increases over a baking time, and
a second interval in which the conductivity of the hole injection material decreases over a baking time after the first interval,

wherein the hole injection material has a maximum conductivity between the first interval and the second interval,
wherein baking the hole injection material includes baking the hole injection material such that the conductivity of the hole injection material is half, or less than half, of the maximum conductivity, and
wherein the hole injection material includes copper phthalocyanine (CuPc) and 4,4′,4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine) (m-MTDATA).

2. The method as claimed in claim 1 , wherein forming the hole injection layer on the anode electrode further includes cooling the hole injection layer,
wherein the cooling includes cooling the hole injection layer at a rate of change in average temperature per unit time of −30° C./minute.

3. The method as claimed in claim 2 , wherein:
the cooling includes cooling the hole injection layer in a mixed gas atmosphere containing nitrogen and oxygen,
a volume ratio between nitrogen and oxygen in the mixed gas ranges from 75:25 to 85:15, and
a content of moisture in the mixed gas is 1 ppm or less.

4. The method as claimed in claim 2 , wherein:
baking the hole injection material includes baking the hole injection material by varying a temperature inside a chamber from a first temperature to a second temperature higher than the first temperature, and then to a third temperature,
cooling the hole injection layer includes cooling the hole injection layer by varying the third temperature to a fourth temperature lower than the third temperature, and
a rate of change in temperature per unit time from the first temperature to the second temperature is greater than a rate of change in temperature per unit time from the second temperature to the third temperature.

5. The method as claimed in claim 1 , wherein:
forming the hole transport layer on the hole injection layer further includes cooling the hole transport layer, and
cooling the hole transport layer includes cooling the hole transport layer at a rate of change in average temperature per unit time of −30° C./minute or more.

6. The method as claimed in claim 5 , wherein cooling the hole transport layer includes cooling the hole transport layer in a pure nitrogen gas atmosphere, a content of noise in the pure nitrogen gas being 10 parts per billion (ppb) or less.

7. The method as claimed in claim 5 , wherein cooling the hole transport layer includes cooling the hole transport layer in a mixed gas atmosphere containing nitrogen and oxygen, a content of moisture in the mixed gas being 10 ppb or less, and a content of oxygen with respect to the mixed gas being 1 ppm or less.

8. The method as claimed in claim 5 , wherein cooling the hole transport layer includes cooling the hole transport layer in a mixed gas atmosphere containing nitrogen and inert gas, the inert gas including hydrogen or carbon monoxide, a content of moisture in the mixed gas being 10 ppb or less, and a content of the inert gas with respect to the mixed gas being 1 volume % or less.

9. The method as claimed in claim 5 , wherein:
baking the hole transport material includes baking the hole transport material by varying a temperature inside a chamber from a fifth temperature to a sixth temperature higher than the fifth temperature, and then to a seventh temperature,
cooling the hole transport layer includes cooling the hole transport layer by varying the seventh temperature to an eighth temperature lower than the seventh temperature, and
a rate of change in temperature per unit time from the fifth temperature to the sixth temperature is greater than a rate of change in temperature per unit time from the sixth temperature to the seventh temperature.

Assignees

• Samsung Display Co Ltd

Inventors

• Kishimoto Katsushi
• Kang Yoon Ho
• Kwak Dong Hoon

Classifications

• H10K71/40

  Thermal treatment, e.g. annealing in the presence of a solvent vapour · CPC title

• H10K50/17 Primary

  Carrier injection layers · CPC title

• H01L51/5004

  Electricity · mapped topic

• H01L51/5221

  Electricity · mapped topic

• H01L2251/552

  Electricity · mapped topic