Light emitting device and fabrication method thereof, and electronic apparatus

Patent metadata

Field	Value
Publication number	US-11211574-B2
Application number	US-201916497304-A
Country	US
Kind code	B2
Filing date	Feb 15, 2019
Priority date	Jun 28, 2018
Publication date	Dec 28, 2021
Grant date	Dec 28, 2021

Abstract

A light emitting device and a fabrication method thereof and an electronic apparatus are disclosed. The light emitting device includes: a first electrode, a second electrode, an electroluminescent layer and a quantum dot light conversion layer; the second electrode is provided on the first electrode; the electroluminescent layer and the quantum dot light conversion layer are provided between the first electrode and the second electrode; and the quantum dot light conversion layer is provided at a light output side of the electroluminescent layer, and generates, under being excited by light from the electroluminescent layer, light having a same color as that of light from the electroluminescent layer and having a wavelength range narrower than that of the light from the electroluminescent layer.

First claim

The invention claimed is:

1. A light emitting device, comprising:
a first electrode;
a second electrode on the first electrode; and
an electroluminescent layer and a quantum dot light conversion layer which are between the first electrode and the second electrode, wherein
the quantum dot light conversion layer is on a light output side of the electroluminescent layer, and generates, under being excited by light from the electroluminescent layer, light having a same color as that of the light from the electroluminescent layer and having a wavelength range narrower than that of the light from the electroluminescent layer.

2. The light emitting device according to claim 1 , wherein
the first electrode is an opaque reflective electrode;
the second electrode is a transparent electrode or a semi-transparent electrode; and
the quantum dot light conversion layer is between the electroluminescent layer and the second electrode.

3. The light emitting device according to claim 2 , further comprising:
an electron injection layer between the second electrode and the electroluminescent layer,
wherein the quantum dot light conversion layer is between the electron injection layer and the second electrode.

4. The light emitting device according to 2 , wherein the quantum dot light conversion layer is a carbon nanometer quantum dot layer.

5. The light emitting device according to claim 1 , wherein
the second electrode is an opaque reflective electrode;
the first electrode is a transparent electrode or a semi-transparent electrode; and
the quantum dot light conversion layer is between the first electrode and the electroluminescent layer.

6. The light emitting device according to claim 5 , further comprising:
a hole injection layer between the first electrode and the electroluminescent layer,
wherein the quantum dot light conversion layer is between the first electrode and the hole injection layer.

7. The light emitting device according to claim 1 , wherein the quantum dot light conversion layer is a carbon nanometer quantum dot layer.

8. The light emitting device according to claim 7 , wherein the light from the electroluminescent layer comprises blue light, and the carbon nanometer quantum dot layer generates blue light under excitation of the blue light from the electroluminescent layer.

9. The light emitting device according to claim 7 , wherein the carbon nanometer quantum dot layer has a thickness of 5 nm to 30 nm.

10. The light emitting device according to claim 8 , wherein a wavelength of the blue light from the electroluminescent layer is less than a wavelength of the blue light generated by the nanometer quantum dot thin film layer.

11. The light emitting device according to claim 10 , wherein the blue light from the electroluminescent layer has a wavelength range of 400 nm to 430 nm, and the blue light generated by the nanometer quantum dot thin film layer has a wavelength range of 430 nm to 440 nm.

12. The light emitting device according to claim 10 , wherein the blue light from the electroluminescent layer has a wavelength range of 400 nm to 430 nm, and the blue light emitted by the nanometer quantum dot thin film layer has a wavelength range of 420 nm to 440 nm.

13. An electronic apparatus, comprising the light emitting device according to claim 1 .

14. The electronic apparatus according to claim 13 , comprising a light-emitting array; the light-emitting array includes a plurality of light-emitting units; and each of the plurality of light-emitting units comprises the light emitting device.

15. A fabrication method of a light emitting device, comprising:
forming a first electrode, an electroluminescent layer, a quantum dot light conversion layer and a second electrode, wherein the second electrode is on the first electrode; the electroluminescent layer and the quantum dot light conversion layer are between the first electrode and the second electrode; the quantum dot light conversion layer is on a light output side of the electroluminescent layer, and generates, under being excited by light from the electroluminescent layer, light having a same color as that of the light from the electroluminescent layer and having a wavelength range narrower than that of the light from the electroluminescent layer.

16. The fabrication method of the light emitting device according to claim 15 , wherein
the first electrode is an opaque reflective electrode, and the second electrode is a transparent electrode or a semi-transparent electrode; and
the quantum dot light conversion layer is formed between the electroluminescent layer and the second electrode.

17. The fabrication method of the light emitting device according to claim 16 , further comprising:
forming an electron injection layer between the second electrode and the electroluminescent layer, wherein the quantum dot light conversion layer is formed between the electron injection layer and the second electrode.

18. The fabrication method of the light emitting device according to claim 15 , wherein
the second electrode is an opaque reflective electrode, and the first electrode is a transparent electrode or a semi-transparent electrode; and
the quantum dot light conversion layer is formed between the electroluminescent layer and the first electrode.

19. The fabrication method of the light emitting device according to claim 18 , further comprising:
forming a hole injection layer between the first electrode and the electroluminescent layer, wherein the quantum dot light conversion layer is formed between the hole injection layer and the first electrode.

20. The fabrication method of the light emitting device according to claim 15 , wherein the quantum dot light conversion layer is a carbon nanometer quantum dot layer.

Assignees

• Fuzhou Boe Optoelectronics Tech Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Lu Junxiang
• Sun Moli
• Hu Guiguang
• Liu Chengjun
• Sun Shaojun
• Yin Junyao
• Chen Xia
• Chi Yanfei

Classifications

• H10K50/115 Primary

  comprising active inorganic nanostructures, e.g. luminescent quantum dots · CPC title

• H10K59/38 Primary

  comprising colour filters or colour changing media [CCM] · CPC title

• H01L51/5092

  Electricity · mapped topic

• H01L51/502 Primary

  Electricity · mapped topic

• H01L51/5218

  Electricity · mapped topic